|
Details, datasheet, quote on part number:PR1001
| |
Datasheet text preview:
DIOTEC ELECTRONICS CORP.
1 8 0 2 0 H o b a r t Blvd., Unit B G a r d e n a , C A 90248 U . S . A Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. FSDP-103-1B
FEATURES
MECHANICAL SPECIFICATION
ACTUAL SIZE OF DO-41 PACKAGE
SERIES RP100 - RP110 DO - 4 1
Low cost Low leakage
LL
Low forward voltage drop High current capacity BL Fast s w i t c h i n g f o r h i g h e f f i c i e n c y Color B a n d Denotes Cathode
BD (Dia)
MECHANICAL DATA
LL
C a s e : J E D E C DO-41, m o l d e d plastic ( U / L Flammability R a t i n g 9 4 V - 0 ) Terminals: Plated axial leads S o l d e r i n g : P e r MIL-STD 202 Method 208 g u a r a n t e e d P o l a r i t y : C o l o r band denotes cathode Mounting Position: A n y W e i g h t : 0 . 0 1 2 O u n c e s ( 0 . 3 4 Grams)
LD (Dia)
Sym BL BD LL LD
Minimum In mm 0.160 0.103 1.00 0.028 4.1 2.6 25.4 0.71
Maximum In mm 0.205 0.107 0.034 5.2 2.7 0.86
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive loads, derate current by 20%.
PARAMETER ( T E S T C O N D I T I O N S )
Series Number Maximum DC Blocking Voltage Maximum RMS Voltage Maximum Peak Recurrent Reverse Voltage Average Forward Rectified Current @ TA = 75 oC ( L e a d l e n g t h = 0 . 3 7 5 i n . ( 9 . 5 mm)) P e a k F o r w a r d S u r g e C u r r e n t ( 8 . 3 mSec s i n g l e h a l f sine w a v e superimposed o n r a t e d load) Maximum Forward Voltage at 1 Amp D C Maximum Reverse Recovery Time (IF=0.5A, IR=1A, IRR=0.25A) M a x i m u m Average D C R e v e r s e C u r r e n t At Rated DC Blocking Voltage Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range @ TA = 25oC o @ TA = 100 C
SYMBOL
RATINGS
RP100 RP101 RP102 RP104 RP106 RP108 RP110
UNITS
VRM VRMS VRRM IO I FSM VFM TRR IRM RJA CJ TJ, TSTG
50 35 50
100 70 100
200 140 200
400 280 400 1
600 420 600
800 560 800
1000 700 1000
VOLTS
AMPS
30 1.3 150 5 50 50 15 -65 to +175 250 500 ( Note 3)
VOLTS nS µA °C/W pF °C
4.97ffsdp1a
Typical Thermal Resistance, Junction to Ambient (Note 1)
NOTES: (1) Thermal resistance junction to ambient with diode mounted on PC Board and lead lengths = 0.375 in. (9.5 mm) (2) Measured at 1MHz & applied reverse voltage of 4 volts (3) 300nS available - consult factory
H23
DIOTEC ELECTRONICS CORP.
1 8 0 2 0 H o b a r t B l v d . , Unit B G a r d e n a , C A 90248 U . S . A Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. FSDP-103-2B
1 AMP FAST RECOVERY SILICON DIODES
RATING & CHARACTERISTIC CURVES FOR SERIES RP100 - RP110
50
40 JEDEC Method 8.3 mS Half Sine Wave TJ = 150 oC
30
Single Phase, Half wave, 60 H z Resistive and Inductive Loads
20
10
A m b i e n t Temperature, o C FIGURE 1. FORWARD CURRENT DERATING CURVE
0 1 10 100
Number of Cycles at 60 Hz FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
10
100
T J = 2 5 oC
1.0
f = 1 MHz
10
0.1
TJ = 25 oC Pulse Width = 300 µS 1% Duty Cycle
0.01
0.1 0.1
1
10
Instantaneous Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC
50 noninductive 10 noninductive
Reverse Voltage, (Volts) FIGURE 4. TYPICAL JUNCTION CAPACITANCE
TRR 0.5
(+)
25 VDC (APPROX)
D.U.T.
(-)
PULSE GENERATOR (Note 2)
0.0
(-)
1 noninductive OSCILLOSCOPE (Note 1)
(+)
-0.5
-1.0
NOTES: (1) Rise time = 7nS max., input impedance = 1 Megohm, 22 pF (2) Rise time = 10nS max., source impedance = 50 ohms
Set time base f o r 10nS/cm
1 cm
F I G U R E 5 . REVERSE R E C O V E R Y T E S T S E T U P AND T I M E CHARACTERISTIC
H24
4.97bfsdp103
|
|
