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Details, datasheet, quote on part number:RS407S
 
 
Part:RS407S
Category:Discrete
Description:
Company:Diotec Electronics Corporation
Datasheet:Download RS407S datasheet   File size : 113 kB
Request For quote:  Find where to buy RS407S
 



Datasheet text preview:
DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958

Data S h e e t N o . B R S B - 4 0 0 - 1 C ABSB-400-1C

FEATURES

MECHANICAL SPECIFICATION
ACTUAL SIZE OF SB4 PACKAGE DT SB404L C

VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical < 2%, Max. < 10% of Die Area) BUILT-IN STRESS RELIEF MECHANISM FOR S U P E R I O R R E L I A B I L I T Y AND P E R F O R M A N C E SURGE OVERLOAD RATING TO 200 AMPS PEAK

SERIES:

SB400L - SB410L ASB404L - ASB408L

D

DT SB404L
_ +

D1

UL RECOGNIZED - FILE #E124962
MECHANICAL DATA
_

Case: Molded plastic, U/L Flammability Rating 94V-0 Terminals: Round silver plated copper pins
SYM MILLIMETERS MIN 6.4 2.06 1.22 4.57 19.1 15.62 14.38* 27.94 MAX 6.65 2.18 1.32 5.59 19.3 15.88 n/a n/a INCHES MIN 0.252 0.061 0.048 0.180 0.750 0.615 0.566* 1.2 MAX 0.262 0.065 0.052 0.220 0.760 0.625 n/a n/a n/a

+

L1 L B

Soldering: Per MIL-STD 202 Method 208 guaranteed (NOTE 1) Polarity: Marked on case Mounting Position: Any. Weight: 0.2 Ounces (5.6 Grams)

A A1 B B1 C D D1 L

B1 A1 A

L1 25.4 n/a 1.0 * This measurement is "Typical"

MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive loads, derate current by 20%.

PARAMETER (TEST CONDITIONS)
Series Number Maximum DC Blocking Voltage Working Peak Reverse Voltage Maximum Peak Recurrent Reverse Voltage RMS Reverse Voltage Thermal Energy (Rating for Fusing) Peak Forward Surge Current. Single 60Hz Half-Sine Wave Superimposed on Rated Load (JEDEC Method) TJ = 150O C Average Forward Rectified Current @ TA = 50O C
Junction Operating and Storage Temperature Range Minimum Avalanche Voltage Maximum Avalanche Voltage Maximum Forward Voltage (Per Diode) at 4 Amps DC

RATINGS

SYMBOL

CONTROLLED AVALANCHE

NON-CONTROLLED AVALANCHE

UNITS

ASB ASB ASB S B S B S B S B S B S B S B 404L 4 0 6 L 4 0 8 L 4 0 0 L 401L 4 0 2 L 4 0 4 L 4 0 6 L 408L 410L

VRM VRWM VRRM VR (RMS) It I FSM IO TJ, TSTG V(BR) MIN V (BR) M A X VFM IRM VISO RJA RJL
450 650 850
2

400

600

800

50

100

200

400

600

800 1 0 0 0

VOLTS

280

420

560

35

70

140 93

280

420

560

700

AMPS2 SEC AMPS °C
n/a n/a

200 4 -55 to +150

900 1100 1300

VOLTS

0.95 (Typical < 0.90) 1 50 2500 19.0 2.4

@ TA = 25o C Maximum Reverse Current at Rated VRM @TA = 125o C Minimum Insulation Breakdown Voltage (Circuit to Case) Typical Thermal Resistance Junction to Ambient (Note 1) Junction to Lead (Note 2)

µA VOLTS
o

C/W
3 . 0 1 04sbl

NOTES: (1) Bridge mounted on 3.0" sq. x 0.11" thick (7.5cm sq. x 0.3cm) aluminum plate. (2) Bridge mounted on PC Board with 0.5" sq. (12mm sq.) copper pads and a lead length of 0.375" (9.5mm).

E15

DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958

Data S h e e t N o . B R S B - 4 0 0 - 2 C ABSB-400-2C

4 AMP SILICON BRIDGE RECTIFIERS
RATING & CHARACTERISTIC CURVES FOR SERIES SB400L - SB410L and SERIES ASB404L - ASB408L
200

NOTE 1
175

150

125

100

60Hz Resistive or Inductive Loads

75

NOTE 2
50 1 10 100

Ambient Temperature, oC FIGURE 1. FORWARD CURRENT DERATING CURVE

Number of Cycles at 60 Hz FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT

100 10

TJ = 100o C

10

1.0

NOTE 3
0.1

1.0
TJ = 25o C

0.01

0

20

40

60

80

100

120

140

0.1

Percent of Rated Peak Reverse Voltage Instantaneous Forward Voltage (Volts) FIGURE 4. TYPICAL REVERSE CHARACTERISTICS

FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE

250 200

NOTES NOTE 4 (1) Bridge Mounted on 3.0" Sq. x 0.11" Thick (7.5cm Sq. x 015cm) Aluminum Plate (2) TJ = 150o C (3) TJ = 25o C; Pulse Width = 300µSec; 1%Duty Cycle (4) TJ = 25o C; f = 1 MHz; Vsig = 50mVp-p
0.1 1 10 100

150 100 50

Reverse Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE

E16

3 . 1 04sbl