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Part: DCR5980Z12
Category:
Discrete
-> Thyristors
-> PCT (Phase Control Thyristors)
Description: 1200V Phase Control Thyristor
Company: Dynex Semiconductor
Datasheet: Download DCR5980Z12 datasheet File size : 140 kB
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Datasheet text preview:
DCR5980Z
DCR5980Z
Phase Control Thyristor Target Information
Replaces issue February 2002, version DS5482-1.1 DS5482-2.0 December 2002
FEATURES
s s s
Double Side Cooling High Surge Capability Low Inductance Internal Construction
KEY PARAMETERS VDRM (max) IT(AV) (max) ITSM dV/dt dI/dt
1800V 5985A 98000A 1000V/µs 250A/µs
APPLICATIONS
s s s
High Power Converters DC Motor Control High Voltage Power Supplies
VOLTAGE RATINGS
Part and Ordering Number Repetitive Peak Voltages VDRM and VDRM V 1800 1600 1400 1200 Conditions
DCR5980Z18 DCR5980Z16 DCR5980Z14 DCR5980Z12
Tvj = 0° to 125°C, IDRM = IRRM = 500mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively
Outline type code: Z (See Package Details for further information) Fig. 1 Package outline
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR5980Z14 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.
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DCR5980Z
CURRENT RATINGS
Tcase = 60°C unless stated otherwise. Symbol Double Side Cooled IT(AV) I T(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 5985 9400 8400 A A A Parameter Test Conditions Max. Units
Single Side Cooled IT(AV) I T(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 3820 6000 4920 A A A
Tcase = 80°C unless stated otherwise. Symbol Double Side Cooled IT(AV) I T(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 4650 7300 6360 A A A Parameter Test Conditions Max. Units
Single Side Cooled IT(AV) I T(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 2910 4570 3630 A A A
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DCR5980Z
SURGE RATINGS
Symbol ITSM I2t ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current I2t for fusing Test Conditions 10ms half sine, Tcase = 125°C VR = 50% VRRM - 1/4 sine 10ms half sine, Tcase = 125°C VR = 0 Max. 78.0 30.4 x 106 98.0 48 x 106 Units kA A2s kA A2s
DYNAMIC CHARACTERISTICS
Symbol IRRM/IRRM dV/dt dI/dt Parameter Peak reverse and off-state current Max. linear rate of rise of off-state voltage Rate of rise of on-state current Test Conditions At VRRM/VDRM, Tcase = 125°C To 67% VDRM, Tj = 125°C From 67% VDRM to 1100A Gate source 1A, tr = 0.5µs, Tj = 125°C VT(TO) rT tgd Threshold voltage On-state slope resistance Delay time At Tvj = 125°C At Tvj = 125°C VD = 67% VDRM, gate source 20V, 10 tr = 0.5µs, Tj = 25°C IL IH Latching current Holding current Tj = 25°C, VD = 5V Tj = 25°C, VGK = 150 40 750 200 mA mA 1.0 0.77 0.05 1.5 V m µs Repetitive 50Hz Non-repetitive Min. Max. 500 1000 250 500 Units mA V/µs A/µs A/µs
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DCR5980Z
THERMAL AND MECHANICAL RATINGS
Symbol Rth(j-c) Parameter Thermal resistance - junction to case Test Conditions Double side cooled Single side cooled DC Anode DC Cathode DC Rth(c-h) Thermal resistance - case to heatsink Clamping force 83.0kN Double side Min. 55 74.0 Max. 0.0065 0.013 0.013 0.001 0.002 135 125 125 91.0 Units °CW °CW °CW °CW °CW °C °C °C kN
(with mounting compound) Single side Tvj Virtual junction temperature On-state (conducting) Reverse (blocking) T stg Fm Storage temperature range Clamping force
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT IGT VGD VFGM VFGN VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Test Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC At VDRM Tcase = 125oC Anode positive with respect to cathode Anode negative with respect to cathode Anode positive with respect to cathode See table, gate characteristics curve Max. 3.5 500 0.25 30 0.25 5 30 150 10 Units V mA V V V V A W W
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DCR5980Z
CURVES
8000
6000
7000
5000
Instantaneous on-state current, IT -(A)
6000 Mean power dissipation - (W)
4000
5000
4000
3000
3000
2000
2000
1000
1000
dc 1/2 wave 3 phase 6 phase 1000 2000 3000 4000 5000 Mean on-state current, IT(AV) - (A) 6000
0 0.7
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
0 0
Instant on-state voltage, VT - (V)
Fig.2 Maximum (limit) on-state characteristics VTM Equation:VTM = A + Bln (IT) + C.IT+D.IT Where A = 0.4624 B = 0.0275 C = 2.2501 x 105 D = 0.0032 these values are valid for Tj = 125°C for IT 500A to 7000A
Fig.3 Power dissipation
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