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Part: DF45110
Category:
Discrete
-> Diodes & Rectifiers
-> Fast Recovery Diodes
-> Power
Description: 1000V Fast Recovery Diode
Company: Dynex Semiconductor
Datasheet: Download DF45110 datasheet File size : 85 kB
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Datasheet text preview:
DF451
DF451
Fast Recovery Diode
Replaces March 1999 version, DS4142-4.0 DS4143-5.0 January 2000
FEATURES
s s s
Double Side Cooling High Surge Capability Low Recovery Charge
Applications
s s s s s s
KEY PARAMETERS VRRM 1600V I F(AV) 295A I FSM 3500A Qr 25µC trr 1.22µs
Induction Heating A.C. Motor Drives Inverters And Choppers Welding High Frequency Rectification UPS
Voltage Ratings
Type Number Repetitive Peak Reverse Voltage VRRM V 1600 1400 1200 1000 800 600 Conditions Outline type code: M771. See Package Details for further information. VRSM = VRRM + 100V
DF451 16 DF451 14 DF451 12 DF451 10 DF451 08 DF451 06
CURRENT RATINGS
Symbol Double Side Cooled IF(AV) I F(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 65oC Tcase = 65oC Tcase = 65oC 295 543 391 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) I F(AV) I F(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 65oC Tcase = 65oC Tcase = 65oC 220 348 285 A A A 1/87
DF451
SURGE RATINGS
Symbol I FSM I2t I FSM I2t Parameter Surge (non-repetitive) forward current 10ms half sine; with 0% VRRM, Tj = 150oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 50% VRRM, Tj = 150oC I2t for fusing 39.2 x 103 A2s 61.25 x 103 2.8 A2s kA Conditions Max. 3.5 Units kA
THERMAL AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Max. 0.07 0.133 0.147 0.02 0.02 150 150 5.5 Units
o
dc Anode dc Cathode dc
55 4.5
C/W
o
C/W C/W C/W C/W
o
o
Rth(c-h)
Thermal resistance - case to heatsink
Clamping force 5.0kN with mounting compound Forward (conducting)
Double side Single side
o
o
Tvj T stg -
Virtual junction temperature Storage temperature range Clamping force
C C
o
kN
CHARACTERISTICS
Symbol VFM IRRM trr QRA1 I RM K VTO rT VFRM Forward voltage Peak reverse current Reverse recovery time Recovered charge (50% chord) Reverse recovery current Soft factor Threshold voltage Slope resistance Forward recovery voltage At Tvj = 125oC At Tvj = 125oC di/dt = 1000A/µs, Tj = 125oC IF = 500A, diRR/dt = -80A/µs Tcase = 125oC, VR = 100V Parameter Conditions At 600A peak, Tcase = 25oC At VRRM, Tcase = 125oC Typ. 1.22 1.7 Max. 2.65 100 Units V mA µs µC A V m V
25 40 1.6 1.5 40
2/7
DF451
DEFINITION OF K FACTOR AND QRA1
QRA1 = 0.5x IRR(t1 + t2) dIR/dt 0.5x IRR IRR t1 t2 k = t1/t2
CURVES
3000 Measured under pulse conditions
2500
Instantaneous forward current, IF - (A)
2000
Tj = 150°C 1500
Tj = 25°C 1000
500 2.0
3.0
4.0
5.0
6.0
Instantaneous forward voltage, VF - (V)
Fig.1 Maximum (limit) forward characteristics
3/87
DF451
500 Measured under pulse conditions
400
Instantaneous forward current, IF - (A)
300 Tj = 150°C
200 Tj = 25°C
100
0 1.25
1.5
1.75
2.0
2.25
Instantaneous forward voltage, VF - (V)
Fig.2 Maximum (limit) forward characteristics
4/7
DF451
1000 IF QS =
50µs 0
Conditions: Tj = 125°C, VR = 100V
QS tp = 1ms dIR/dt 100 IRR IF = 2000A IF = 1000A IF = 500A IF = 200A IF = 100A
Reverse recovered charge QS - (µC)
10
1 1 10 100 Rate of rise of reverse current, dIR/dt - (A/µs) 1000
Fig.3 Recovered charge
1000 Conditions: Tj = 125°C, VR = 100V
IF = 2000A
Reverse recovery current, IRR - (A)
IF = 1000A 100 IF = 500A
IF = 100A
10
1 1 10 100 Rate of rise of reverse current, dIR/dt - (A/µs) 1000
Fig.4 Typical reverse recovery current vs rate of rise of forward current 5/87
Others parts begin by df
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