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Part: DG406BP
Category:
Discrete
-> Thyristors
Description: 400a 2500v Gto Thyristor
Company: Dynex Semiconductor
Datasheet: Download DG406BP datasheet File size : 304 kB
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Datasheet text preview:
DG406BP25
DG406BP25
Gate Turn-off Thyristor
Replaces March 1998 version, DS4090-2.3 DS4090-3.0 January 2000
APPLICATIONS
s Variable speed A.C. motor drive inverters (VSD-AC). s Uninterruptable Power Supplies s High Voltage Converters. s Choppers. s Welding. s Induction Heating. s DC/DC Converters.
KEY PARAMETERS 1000A ITCM VDRM 2500V IT(AV) 400A dVD/dt 1000V/µs diT/dt 300A/µs
FEATURES
s Double Side Cooling. s High Reliability In Service. s High Voltage Capability. s Fault Protection Without Fuses. s High Surge Current Capability. s Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements.
Outline type code: P. See Package Details for further information.
VOLTAGE RATINGS
Type Number Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage VDRM VRRM V V 2500 16 Conditions
DG406BP25
Tvj = 125oC, IDM = 50mA, IRRM = 50mA
CURRENT RATINGS
Symbol ITCM I T(AV) I T(RMS) Parameter Conditions Max. 1000 400 630 Units A A A
Repetitive peak controllable on-state current VD = VDRM, Tj = 125oC, diGQ/dt = 30A/µs, Cs = 1.0µF Mean on-state current RMS on-state current THS = 80oC. Double side cooled. Half sine 50Hz. THS = 80oC. Double side cooled. Half sine 50Hz.
1/19
DG406BP25
SURGE RATINGS
Symbol I TSM I2t diT/dt Parameter Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Conditions 10ms half sine. Tj = 125oC 10ms half sine. Tj =125oC VD = 2000V, IT = 1000A, Tj = 125oC, IFG 30A, Rise time > 1.0µs To 66% VDRM; RGK 1.5, Tj = 125oC dVD/dt Rate of rise of off-state voltage To 66% VDRM; VRG = -2V, Tj = 125oC Peak stray inductance in snubber circuit IT = 1000A, VD = VDRM, Tj = 125oC, diGQ/dt = 30A/µs, Cs = 1.0µF 1000 200 Max. 8.0 0.32 x 106 300 500 Units kA A2s A/ µ s V/µs V/µs nH
LS
GATE RATINGS
Symbol VRGM IFGM PFG(AV) PRGM diGQ/dt tON(min) t OFF(min) Parameter Peak reverse gate voltage Peak forward gate current Average forward gate power Peak reverse gate power Rate of rise of reverse gate current Minimum permissable on time Minimum permissable off time Conditions This value maybe exceeded during turn-off Min. 20 15 20 100 Max. 16 70 10 15 60 Units V A W kW A/µs µs µs
THERMAL RATINGS AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-hs) DC thermal resistance - junction to heatsink surface Anode side cooled Cathode side cooled Rth(c-hs) Tvj TOP/Tstg Contact thermal resistance Virtual junction temperature Operating junction/storage temperature range Clamping force Clamping force 12.0kN With mounting compound per contact Min. -40 11.0 Max. 0.041 0.07 0.1 0.009 125 125 15.0 Units
o
C/W C/W C/W C/W
o
o
o
o
C C
o
kN
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DG406BP25
CHARACTERISTICS
Tj = 125oC unless stated otherwise Symbol VTM I DM I RRM VGT IGT IRGM EON td tr EOFF tgs tgf t gq QGQ QGQT IGQM On-state voltage Peak off-state current Peak reverse current Gate trigger voltage Gate trigger current Reverse gate cathode current Turn-on energy Delay time Rise time Turn-off energy Storage time Fall time Gate controlled turn-off time Turn-off gate charge Total turn-off gate charge Peak reverse gate current IT = 1000A, VDM = 2500V Snubber Cap Cs = 1.0µF, diGQ/dt = 30A/µs Parameter Conditions At 1000A peak, IG(ON) = 4A d.c. VDRM = 2500V, VRG = 0V At VRRM VD = 24V, IT = 100A, Tj = 25oC VD = 24V, IT = 100A, Tj = 25oC VRGM = 16V, No gate/cathode resistor VD = 2000V IT = 1000A, dIT/dt = 300A/µs IFG = 30A, rise time 1.0µs Min. Max. 2.5 50 50 1.0 1.5 50 1040 1.5 3.0 2300 14.0 1.5 15.5 3000 6000 420 Units V mA mA V A mA mJ µs µs mJ µs µs µs µC µC A
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DG406BP25
CURVES
2.0 4.0
Gate trigger voltage VGT - (V)
1.5
3.0
Gate trigger current IGT - (A)
1.0
2.0
VGT 0.5 IGT 0 -50 -25 0 25 50 75 100 Junction temperature Tj - (°C) 125 0 150 1.0
Fig.1 Maximum gate trigger voltage/current vs junction temperature
4.0
Instantaneous on-state current ITM - (kA)
3.0
Tj = 25°C Tj = 125°C
2.0
1.0
Maximum permissible turn-off current ITCM - (kA)
Measured under pulse conditions. IG(ON) = 4.0A Half sine wave 10ms
1.5
1.0
0.5 Conditions: Tj = 125°C, VDM = VDRM, dIGQ/dt = 30A/µs 2.0
0 1.0
2.0 3.0 4.0 Instantaneous on-state voltage VTM - (V)
Fig.2 On-state characteristics
5.0
0 0.25 0.50 0.75 1.00 1.25 1.5 1.75 Snubber capacitance CS - (µF)
Fig.3 Maximum dependence of ITCM on CS
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DG406BP25
0.05
0.04
Thermal impedance - °C/W
dc
0.03
0.02
0.01
0 0.001
0.01
0.1
Time - (s)
1.0
10
100
Fig.4 Maximum (limit) transient thermal impedance - double side cooled
Peak half sine wave on-state current - (kA)
20
15
10
5
0 0.0001
0.001
0.01 Pulse duration - (s)
0.1
1.0
Fig.5 Surge (non-repetitive) on-state current vs time
5/19
Others parts begin by dg
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