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Details, datasheet, quote on part number:DGT304SE
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Datasheet text preview:
DGT304SE13
DGT304SE
Gate Turn-off Thyristor
Replaces January 2000 version, DS4609-4.0 DS4609-4.1 February 2002
APPLICATIONS
s Variable speed A.C. motor drive inverters (VSD-AC) s Uninterruptable Power Supplies s High Voltage Converters s Choppers s Welding s Induction Heating s DC/DC Converters
KEY PARAMETERS 700A ITCM VDRM 1300V IT(AV) 250A dVD/dt 500V/µs diT/dt 500A/µs
FEATURES
s Double Side Cooling s High Reliability In Service s High Voltage Capability s Fault Protection Without Fuses s High Surge Current Capability s Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements
Outline type code: E. See Package Details for further information.
VOLTAGE RATINGS
Type Number Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage VDRM VRRM V V 1300 16 Conditions
DGT304SE13
Tvj = 125oC, IDM = 50mA, IRRM = 50mA, VRG = 2V
CURRENT RATINGS
Symbol ITCM I T(AV) I T(RMS) Parameter Conditions Max. 700 250 390 Units A A A
Repetitive peak controllable on-state current VD = 60%VDRM, Tj = 125oC, diGQ/dt =15A/µs, Cs = 2.0µF Mean on-state current RMS on-state current THS = 80oC. Double side cooled. Half sine 50Hz. THS = 80oC. Double side cooled. Half sine 50Hz.
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DGT304SE13
SURGE RATINGS
Symbol I TSM I2t diT/dt dVD/dt Parameter Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Rate of rise of off-state voltage Conditions 10ms half sine. Tj = 125oC 10ms half sine. Tj =125oC VD = 60% VDRM, IT = 700A, Tj = 125oC, IFG > 20A, Rise time < 1.0µs To 80% VDRM; RGK 1.5, Tj = 125oC Max. 4.0 80000 500 500 Units kA A2s A/ µ s V/µs
GATE RATINGS
Symbol VRGM IFGM PFG(AV) PRGM diGQ/dt tON(min) t OFF(min) Parameter Peak reverse gate voltage Peak forward gate current Average forward gate power Peak reverse gate power Rate of rise of reverse gate current Minimum permissable on time Minimum permissable off time Conditions This value maybe exceeded during turn-off Min. 10 20 40 Max. 16 50 10 6 50 Units V A W kW A/µs µs µs
THERMAL RATINGS
Symbol Parameter Conditions Double side cooled Rth(j-hs) DC thermal resistance - junction to heatsink surface Anode side cooled Cathode side cooled Rth(c-hs) Tvj TOP/Tstg Contact thermal resistance Virtual junction temperature Operating junction/storage temperature range Clamping force Clamping force 5.5kN With mounting compound per contact Min. -40 5.0 Max. 0.075 0.12 0.20 0.018 125 125 6.0 Units
o
C/W C/W C/W C/W
o
o
o
o
C C
o
kN
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DGT304SE13
CHARACTERISTICS
Tj = 125oC unless stated otherwise Symbol VTM I DM I RRM VGT IGT IRGM EON td tr EOFF tgs tgf t gq QGQ QGQT On-state voltage Peak off-state current Peak reverse current Gate trigger voltage Gate trigger current Reverse gate cathode current Turn-on energy Delay time Rise time Turn-off energy Storage time Fall time Gate controlled turn-off time Turn-off gate charge Total turn-off gate charge IT =600A, VDM = 750V Snubber Cap Cs = 1.5µF, diGQ/dt = 15A/µs RL = (Residual inductance 3µH) Parameter Conditions At 600A peak, IG(ON) = 2A d.c. At = VDRM, VRG = 2V At VRRM VD = 24V, IT = 100A, Tj = 25oC VD = 24V, IT = 100A, Tj = 25oC VRGM = 16V, No gate/cathode resistor VD = 900V, IT = 600A, dIT/dt = 300A/µs IFG = 20A, rise time < 1.0µs RL = (Residual inductance 3µH) Min. Max. 2.2 25 50 0.9 1.0 50 130 1.5 3.0 350 10 11 0.9 700 1400 Units V mA mA V A mA mJ µs µs mJ µs µs µs µC µC
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DGT304SE13
CURVES
Fig.1 Gate characteristics
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Dependence of ITCM on CS
Fig.4 Maximum (limit) transient thermal resistance
Fig.5 Surge (non-repetitive) on-state current vs time
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DGT304SE13
Fig.6 Steady state rectangulerwave conduction loss - double side cooled
Fig.7 Steady state sinusoidal wave conduction loss - double side cooled
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