|
Details, datasheet, quote on part number:DGT408BRP
| |
Datasheet text preview:
DGT408BRP
DGT408BRP
Reverse Blocking Gate Turn-off Thyristor Target Information
DS4415-2.1 February 2002
FEATURES
s s s s s s s
KEY PARAMETERS I TCM dVD/dt diT/dt 800A 1000V/µs 300A/µs
Reverse Blocking Capability Double Side Cooling High Reliability In Service High Voltage Capability Fault Protection Without Fuses High Surge Current Capability Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements
VDRM/VRRM 4500V
APPLICATIONS
s s s s s s s
Variable speed A.C. motor drive inverters (VSD-AC) Uninterruptable Power Supplies High Voltage Converters Choppers Welding Induction Heating DC/DC Converters.
Outline type code: P (See Package Details for further information) Fig. 1 Package outline
VOLTAGE RATINGS
Type Number Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage VDRM VRRM V V 4500 4500 Conditions
DGT408BRP4540
Tvj = 115oC, IDM = 50mA, IRRM = 50mA
CURRENT RATINGS
Symbol ITCM I T(AV) I T(RMS) Parameter Conditions Max. 800 Units A A A
Repetitive peak controllable on-state current VD = VDRM, Tj = 115oC, diGQ/dt = 30A/µs, Cs = 2.0µF Mean on-state current RMS on-state current THS = 80oC. Double side cooled. Half sine 50Hz. THS = 80oC. Double side cooled. Half sine 50Hz.
1/6
www.dynexsemi.com
DGT408BRP
SURGE RATINGS
Symbol I TSM I2t diT/dt Parameter Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Conditions 10ms half sine. Tj = 115oC 10ms half sine. Tj =115oC VD = 3000V, IT = 800A, Tj = 115oC, IFG > 30A, Rise time > 1.5µs To 66% VDRM; RGK 1.5, Tj = 115oC dVD/dt Rate of rise of off-state voltage To 66% VDRM; VRG = -2V, Tj = 115oC Peak stray inductance in snubber circuit 1000 200 Max. 6.0 0.18 x 106 300 Units kA A2s A/ µ s V/ µ s V/µs nH
LS
GATE RATINGS
Symbol VRGM IFGM PFG(AV) PRGM diGQ/dt tON(min) t OFF(min) Parameter Peak reverse gate voltage Peak forward gate current Average forward gate power Peak reverse gate power Rate of rise of reverse gate current Minimum permissable on time Minimum permissable off time Conditions This value maybe exceeded during turn-off Min. 20 15 20 100 Max. 16 70 10 15 60 Units V A W kW A/µs µs µs
THERMAL RATINGS AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-hs) DC thermal resistance - junction to heatsink surface Anode side cooled Cathode side cooled Rth(c-hs) Tvj TOP/Tstg Contact thermal resistance Virtual junction temperature Operating junction/storage temperature range Clamping force Clamping force 12.0kN With mounting compound per contact Min. -40 11.0 Max. 0.041 0.07 0.1 0.009 125 125 15.0 Units
o
C/W C/W C/W C/W
o
o
o
o
C C
o
kN
2/6
www.dynexsemi.com
DGT408BRP
CHARACTERISTICS
Tj = 115oC unless stated otherwise Symbol VTM I DM I RRM VGT IGT IRGM EON td tr EOFF tgs tgf t gq QGQ QGQT IGQM On-state voltage Peak off-state current Peak reverse current Gate trigger voltage Gate trigger current Reverse gate cathode current Turn-on energy Delay time Rise time Turn-off energy Storage time Fall time Gate controlled turn-off time Turn-off gate charge Total turn-off gate charge Peak reverse gate current IT = 800A, VDM = 3000V Snubber Cap Cs = 2.0µF, diGQ/dt = 30A/µs Parameter Conditions At 800A peak, IG(ON) = 4A d.c. VDRM = 4500V, VRG = 0V At VRRM VD = 24V, IT = 100A, Tj = 25oC VD = 24V, IT = 100A, Tj = 25oC VRGM = 16V, No gate/cathode resistor VD = 3000V IT = 800A, dIT/dt = 300A/µs IFG = 30A, rise time < 1.5µs Min. Max. 4.7 50 50 1.0 1.5 50 1200 1.5 5.0 3000 15.0 1.5 15.5 850 Units V mA mA V A mA mJ µs µs mJ µs µs µs µC µC A
3/6
www.dynexsemi.com
DGT408BRP
Anode voltage and current
0.9VD
0.9IT
dVD/dt VD IT VD VDM
0.1VD td tgt tr
VDP tgs tgf
ITAIL
dIFG/dt
Gate voltage and current
tgq IFG VFG IG(ON)
0.1IFG
0.1IGQ tw1 QGQ 0.5IGQM IGQM Recommended gate conditions: ITCM = 800A IFG = 30A IG(ON) = 4A d.c. tw1(min) = 20µs IGQM = 300A diGQ/dt = 30A/µs QGQ = VRG(min) = 2V VRG(max) = 16V V(RG)BR
VRG
These are recommended Dynex Semiconductor conditions. Other conditions are permitted
Fig.2 General switching waveforms
4/6
www.dynexsemi.com
DGT408BRP
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
2 holes Ø3.6 ± 0.1 x 1.95 ± 0.05 deep
Auxiliary cathode
20°
Gate
Cathode Ø51 nom Ø38 nom
18 nom
Ø38 nom Ø56 max Ø57.5 max Ø63.5 max
Weight: 350g
Anode
Nominal weight: 350g Clamping force: 12kN ±10% Lead length: 505mm Package outine type code: P
27.0 25.5
5/6
www.dynexsemi.com
|
|
