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Details, datasheet, quote on part number:DIM1200DDM17-E000
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Datasheet text preview:
DIM1200DDM17-E000
Preliminary Information
DIM1200DDM17-E000
Dual Switch IGBT Module
Preliminary Information
DS5603-1.4 June 2003
FEATURES
I I I I I I
Trench Gate Field Stop Technology Low Conduction Losses Low Switching Losses 10µs Short Circuit Withstand Isolated MMC Base with AlN Substrates High Thermal Cycling Capability
KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK)
1700V 2.0V 1200A 2400A
*Measured at auxiliary terminals.
APPLICATIONS
I
5(E1)
1(E1)
2(C2) 12(C 2)
High Reliability Inverters
G G G
6(G1)
11(G2)
Wind Turbines Motor Controllers UPS Systems
3(C1) 4(E2) 7(C 1) 10(E2)
I
Traction
G G
Propulsion Drives Auxiliaries Fig. 1 Dual switch circuit diagram
The Powerline range of high power modules includes half b r i d g e , chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM1200DDM17-E000 is a dual switch 1700V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. This module is o p t i m i s e d for applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
7
5 6 3 8 1
9 12 11 10 4 2
ORDERING INFORMATION
Order As: DIM1200DDM17-E000 Note: When ordering, please use the complete part number. Outline type code: D (See package details for further information) Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1200DDM17-E000
Preliminary Information
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax I2t Visol QPD Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I2t value Isolation voltage - per module Partial discharge - per module Tcase = 75°C 1ms, Tcase = 110°C Tcase = 25°C, Tj = 150°C VR = 0, tp = 10ms, Tvj = 125°C Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287. V1 = 1800V, V2 = 1300V, 50Hz RMS VGE = 0V Test Conditions Max. 1700 ± 20 1200 2400 6.94 200 4000 10 Units V V A A kW kA2s V PC
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1200DDM17-E000
Preliminary Information
THERMAL AND MECHANICAL RATINGS
Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Symbol Rth(j-c) AlN AlSiC 20mm 10mm 175 Parameter Thermal resistance - transistor (per arm) Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode (per arm) Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Tj Junction temperature Mounting torque 5Nm (with mounting grease) Transistor Diode T stg Storage temperature range Screw torque Mounting - M6 Electrical connections - M4 Electrical connections - M8 40 150 125 125 5 2 10 °C °C °C Nm Nm Nm 8 °C/kW 40 °C/kW Min. Typ. Max. 18 Units °C/kW
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/9
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DIM1200DDM17-E000
Preliminary Information
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise. Symbol I CES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125°C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = ±20V, VCE = 0V IC = 40mA, VGE = VCE VGE = 15V, IC = 1200A VGE = 15V, IC = 1200A, , Tcase = 125°C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF = 1200A IF = 1200A, Tcase = 125°C Cies LM RINT SCData Input capacitance Module inductance - per arm Internal transistor resistance - per arm Short circuit. ISC VCE = 25V, VGE = 0V, f = 1MHz Tj = 125°C, VCC = 1000V, tp 10µs, VCE(max) = VCES L*. di/dt IEC 60747-9 Note: Measured at auxiliary terminals. * L is the circuit inductance + LM I1 I2 Min. 5.2 Typ. 5.8 2.0 2.3 1.9 2.0 105 20 0.27 4500 4300 Max. 5 25 4 6.4 2.4 3.0 1200 2400 2.3 2.4 Units mA mA µA V V V A A V V nF nH m A A
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1200DDM17-E000
Preliminary Information
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qg Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Gate charge Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 1200A, VR = 900V, dIF/dt = 5200A/µs Test Conditions IC = 1200A VGE = ±15V VCE = 900V RG(ON) = 1.2 RG(OFF) = 1.5 L ~ 100nH Min. Typ. 1200 200 320 900 220 300 14 275 950 180 Max. Units ns ns mJ ns ns mJ µC µC A mJ
Tcase = 125°C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy Test Conditions IC = 1200A VGE = ±15V VCE = 900V RG(ON) = 1.2 RG(OFF) = 1.5 L ~ 100nH IF = 1200A, VR = 900V, dIF/dt = 5200A/µs Min. Typ. 1300 300 420 900 250 400 475 1150 320 Max. Units ns ns mJ ns ns mJ µC A mJ
Note: Switching Characteristic measurements taken using standard driver circuit conditions.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/9
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