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Details, datasheet, quote on part number:DIM1800ESM12
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Datasheet text preview:
DIM1800ESM12-A000
DIM1800ESM12-A000
Single Switch IGBT Module
Replaces July 2002, version DS5529-2.1 DS5529-3.0 March 2003
FEATURES
I I I I
10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates
KEY PARAMETERS VCES (typ) VCE(sat)* (max) IC (max) IC(PK)
1200V 2.2V 1800A 3600A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
I I I
External connection C1 Aux C C2 C3
High Reliability Inverters Motor Controllers Traction Drives
The Powerline range of high power modules includes half b r i d g e , chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM1800ESM12-A000 is a single switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. This module is optimised for applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
G Aux E E1 E2 External connection E3
Fig. 1 Single switch circuit diagram
ORDERING INFORMATION
Order As: DIM1800ESM12-A000 Note: When ordering, please use the whole part number.
Outline type code: E (See package details for further information) Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
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DIM1800ESM12-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax I2t Visol QPD Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I2t value (IGBT arm) Isolation voltage - per module Partial discharge - per module Tcase = 85°C 1ms, Tcase = 115°C Tcase = 25°C, Tj = 150°C VR = 0, tp = 10ms, Tvj = 125°C Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287. V1 = 1300V, V2 = 1000V, 50Hz RMS VGE = 0V Test Conditions Max. 1200 ± 20 1800 3600 15625 900 2500 10 Units V V A A W kA2s V PC
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1800ESM12-A000
THERMAL AND MECHANICAL RATINGS
Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Symbol Rth(j-c) AlN AlSiC 32mm 20mm 175 Parameter Thermal resistance - transistor Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Tj Junction temperature Mounting torque 5Nm (with mounting grease) Transistor Diode T stg Storage temperature range Screw torque Mounting - M6 Electrical connections - M4 Electrical connections - M8 40 150 125 125 5 2 10 °C °C °C Nm Nm Nm 6 °C/kW 17.8 °C/kW Min. Typ. Max. 8 Units °C/kW
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/10
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DIM1800ESM12-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise. Symbol I CES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125°C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = ±20V, VCE = 0V IC = 90mA, VGE = VCE VGE = 15V, IC = 1800A VGE = 15V, IC = 1800A, , Tcase = 125°C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF = 2400A IF = 2400A, Tcase = 125°C Cies LM RINT SCData Input capacitance Module inductance Internal transistor resistance Short circuit. ISC VCE = 25V, VGE = 0V, f = 1MHz Tj = 125°C, VCC = 900V, tp 10µs, VCE(max) = VCES L*. di/dt IEC 60747-9 I1 I2 Min. 4.5 Typ. 5.5 2.2 2.6 2.1 2.1 200 10 0.09 12500 10000 Max. 3 75 12 6.5 2.8 3.3 1800 3600 2.4 2.4 Units mA mA µA V V V A A V V nF nH m A A
Note:
Measured at the power busbars and not the auxiliary terminals
L* is the circuit inductance + LM
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1800ESM12-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EO Qg Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Gate charge Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 1800A, VR = 50% VCES, dIF/dt = 9000A/µs Test Conditions IC = 1800A VGE = ±15V VCE = 600V RG(ON) = RG(OFF) = 1.2 L ~ 60nH Min. Typ. 1250 190 330 220 200 100 20 210 860 110 Max. Units ns ns mJ ns ns mJ µC µC A mJ
Tcase = 125°C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 1800A, VR = 50% VCES, dIF/dt = 8000A/µs Test Conditions IC = 1800A VGE = ±15V VCE = 600V RG(ON) = RG(OFF) = 1.2 L ~ 60nH Min. Typ. 11450 190 390 230 340 180 390 1100 200 Max. Units ns ns mJ ns ns mJ µC A mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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