|
|
Part: DS1112SG60
Category:
Discrete
-> Diodes & Rectifiers
-> High Voltage/Power Diodes
Description: 6000V Rectifier Diode
Company: Dynex Semiconductor
Datasheet: Download DS1112SG60 datasheet File size : 651 kB
Request For quote: Find where to buy DS1112SG60
Datasheet text preview:
DS1112SG
DS1112SG
Rectifier Diode
Replaces January 2000 version, DS4181-4.0 DS4181-5.0 August 2001
FEATURES
s Double Side Cooling s High Surge Capability
KEY PARAMETERS VRRM 6000V IF(AV) 811A IFSM 10500A
APPLICATIONS
s Rectification s Freewheel Diode s DC Motor Control s Power Supplies s Welding s Battery Chargers
VOLTAGE RATINGS
Type Number Repetitive Peak Reverse Voltage VRRM V Conditions
DS1112SG60 6000 DS1112SG59 5900 DS1112SG58 5800 DS1112SG57 5700 DS1112SG56 5600 DS1112SG55 5500 Lower voltage grades available.
VRSM = VRRM + 100V
Outline type code: G See Package Details for further information. Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DS1112SG58 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.
1/7
www.dynexsemi.com
DS1112SG
CURRENT RATINGS
Tcase = 75oC unless otherwise stated Symbol Double Side Cooled I F(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 811 1274 1172 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) I F(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 534 839 727 A A A
Tcase = 100oC unless otherwise stated Symbol Double Side Cooled I F(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 100oC Tcase = 100oC Tcase = 100oC 630 990 900 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) I F(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 100oC Tcase = 100oC Tcase = 100oC 410 644 550 A A A
2/7
www.dynexsemi.com
DS1112SG
SURGE RATINGS
Symbol I FSM I2t I FSM I2t Parameter Surge (non-repetitive) forward current I2t for fusing Surge (non-repetitive) forward current I2t for fusing Conditions 10ms half sine; Tcase = 150oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 150oC VR = 0 Max. 8.5 360x 103 10.5 565 x 103 Units kA A2s kA A2s
THERMAL AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 12.0kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force 55 11.5 150 175 13.5
o
Min. dc Anode dc -
Max. 0.032 0.064 0.064 0.008 0.016 160
Units
o
C/W
o
C/W C/W C/W C/W
o
o
Double side Single side
o
Rth(c-h)
Thermal resistance - case to heatsink
o
C C C
o
kN
3/7
www.dynexsemi.com
DS1112SG
CHARACTERISTICS
Symbol VFM IRM QS Irr VTO rT Parameter Forward voltage Peak reverse current Total stored charge Reverse recovery current Threshold voltage Slope resistance Conditions At 1800A peak, Tcase = 25oC At VRRM, Tcase = 150oC IF = 1000A, dIRR/dt = 3A/µs Tcase = 150°C, VR = 100V At Tvj = 150°C At Tvj = 150°C Min. Max. 2.1 75 3000 90 0.9 0.93 Units V mA µC A V m
CURVES
2500
2500
Measured under pulse conditions
dc Half wave
Instantaneous forward current, IF - (A)
2000
Mean power dissipation - (W)
2000 3 phase
1500 Tj = 25°C Tj = 150°C 1000
1500
1000
500
500
0 0.5
1.5 2.5 Instantaneous forward voltage, VF - (V)
3.5
0 0
500
1000
1500
2000
Mean forward current, IF(AV) - (A)
Fig.2 Maximum (limit) forward characteristics VFM Equation:VFM = A + Bln (IF) + C.IF+D.IF Where
Fig.3 Dissipation curves A = 1.249986 B = 0.17646 C = 0.000524 D = 0.041024 these values are valid for Tj = 125°C for IF 500A to 2500A
4/7
www.dynexsemi.com
DS1112SG
10000
Conditions: Tj = 150°C VR = 100V IF = 1000A
Peak half sine forward current - (kA)
35
400
I2t = Î2 x t
30
2
350
25 I2t 20
300
I2t value - (A2s x 103)
Stored charge, QS - (µC)
250
1000
15
200
10
150
IF QS dIF/dt
5
100
100 0.1
IRM
1.0 10 Rate of decay of forward current, dIF/dt - (A/µs)
100
0 1 ms
10
1
23
5
10
20
50 50
Cycles at 50Hz Duration
Fig.4 Total stored charge
0.1 Anode side cooled
Thermal Impedance - junction to case, Rth(jc) - (°C/W)
Fig.5 Surge (non-repetitive) forward current vs time (with 50% VRRM at Tcase 125°C)
Double side cooled
0.01
Conduction
Effective thermal resistance Junction to case °C/W Double side 0.032 0.034 0.044 0.057 Single side 0.064 0.066 0.076 0.089
d.c. Halfwave 3 phase 120° 6 phase 60°
0.001 0.001
0.01
0.1 Time - (s)
1.0
10
Fig.6 Maximum (limit) transient thermal impedance junction to case
5/7
www.dynexsemi.com
Others parts begin by ds
|
|
|
