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Details, datasheet, quote on part number:GP800DDM18
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Datasheet text preview:
GP800DDM18
GP800DDM18
Hi-Reliability Dual Switch IGBT Module Advance Information
Replaces October 2000 version, DS5364-2.0 DS5364-3.0 January 2001
FEATURES
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High Thermal Cycling Capability 800A Per Module Non Punch Through Silicon Isolated MMC Base with AlN Substrates
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 3.5V 800A 1600A
APPLICATIONS
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High Reliability Inverters Motor Controllers Traction Drives Resonant Converters
12(C2) 2(C2) 4(E2) 1(E1) 7(C1)
11(G2) 10(E2) 3(C1) 5(E1) 6(G1)
The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP800DDM18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability or very high reliability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.
Fig. 1 Dual switch circuit diagram
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ORDERING INFORMATION
Order As: GP800DDM18 Note: When ordering, please use the whole part number.
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Outline type code: D (See package details for further information) Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP800DDM18
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax Visol Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Isolation voltage Tcase = 65°C 1ms, Tcase = 100°C Tcase = 25°C, Tj = 150°C Commoned terminals to base plate. AC RMS, 1 min, 50Hz VGE = 0V Test Conditions Max. 1800 ±20 800 1600 6940 4000 Units V V A A W V
THERMAL AND MECHANICAL RATINGS
Symbol Rth(j-c) Parameter Thermal resistance - transistor (per arm) Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode (per arm) Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Tj Junction temperature Transistor Diode T stg Storage temperature range Screw torque Mounting - M6 Electrical connections - M4 Electrical connections - M8 40 150 125 125 5 2 10 °C °C °C Nm Nm Nm 8 °C/kW 40 °C/kW Min. Max. 18 Units °C/kW
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP800DDM18
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise. Symbol I CES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125°C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = ±20V, VCE = 0V IC = 40mA, VGE = VCE VGE = 15V, IC = 800A VGE = 15V, IC = 800A, , Tcase = 125°C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF = 800A IF = 800A, Tcase = 125°C Cies LM Input capacitance Module inductance VCE = 25V, VGE = 0V, f = 1MHz Min. 4.5 Typ. 5.5 3.5 4.3 2.2 2.3 90 20 Max. 1 25 4 6.5 4 5 800 1600 2.5 2.6 Units mA mA µA V V V A A V V nF nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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