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Details, datasheet, quote on part number:GP800DDS12
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Datasheet text preview:
GP800DDS12
GP800DDS12
Powerline N-Channel Dual Switch IGBT Module
Replaces October 1999 version, DS5172-3.0 DS5172-4.0 January 2000
The GP800DDS12 is a dual switch 1200V, robust n c h a n n e l enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications i n motor drives and power conversion. The high impedance gate simplifies gate drive considerations e n a b l i n g operation directly from low power control circuitry. Fast switching times allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications. These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. The powerline range of high power modules includes dual and single switch configurations with a range of current and voltage capabilities to match customer system demands. Typical applications include dc motor drives, ac pwm drives, main traction drives and auxiliaries, large ups systems and resonant inverters.
7 8
VCES VCE(sat) IC IC(PK)
KEY PARAMETERS 1200V (typ) 2.7V (max) 800A (max) 1600A
5 6 3 1
9 12 11 10 4 2
Outline type code: D
FEATURES
s s s s s s s
(See package details for further information) Fig. 1 Electrical connections - (not to scale)
12(C2) 2(C2) 4(E2) 1(E1) 7(C )
1
n - Channel Enhancement Mode High Input Impedance Optimised For High Power High Frequency Operation Isolated Base Full 1200V Capability 800A Per Arm
11(G2) 10(E2) 3(C1) 5(E1) 6(G1)
Fig.2 Dual switch circuit diagram
APPLICATIONS
s s s s
ORDERING INFORMATION
Order As: GP800DDS12 Note: When ordering, please use the whole part number.
High Power Switching Motor Control Inverters Traction Systems
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/11
GP800DDS12
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may inlcude potentially hazardous rupture of the package. Appropriate safety precautions should always be followed.
Tcase = 25°C unless stated otherwise. Symbol VCES VGES IC Parameter Collector-emitter voltage Gate-emitter voltage Collector current DC, Tcase = 25°C DC, Tcase = 75°C I C(PK) Pmax Visol Maximum power dissipation Isolation voltage 1ms, Tcase = 75°C Tcase = 25°C (Transistor) Commoned terminals to base plate. AC RMS, 1 min, 50Hz VGE = 0V Test Conditions Max. 1200 ±20 1050 800 1600 6000 2500 Units V V A A A W V
THERMAL AND MECHANICAL RATINGS
Symbol Rth(j-c) Rth(j-c) Rth(c-h) Tj Parameter Thermal resistance - transistor (per arm) Thermal resistance - diode (per arm) Thermal resistance - Case to heatsink (per module) Junction temperature Conditions DC junction to case DC junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M4 Electrical connections - M8 -
Min. 40 -
Max. Units 21 40 8 150 125 125 5 2 10
o
C/kW C/kW
o
o
C/kW
o
C C
o
o
C
Nm Nm Nm
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 2/11
GP800DDS12
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise. Symbol I CES Parameter Collector cut-off current Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125°C I GES VGE(TH) VCE(SAT) IF IFM VF Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = ±20V, VCE = 0V IC = 120mA, VGE = VCE VGE = 15V, IC =800A VGE = 15V, IC = 800A, Tcase = 125°C Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF = 800A IF = 800A, Tcase = 125°C Cies LM Input capacitance Module inductance VCE = 25V, VGE = 0V, f = 1MHz Min. 4 Typ. 2.7 3.2 2.2 2.3 90 20 Max. 1 50 ±4 7.5 3.5 4.0 800 1600 2.4 2.5 Units mA mA µA V V V A A V V nF nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/11
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