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Details, datasheet, quote on part number:GP800NSS33
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Datasheet text preview:
GP800NSS33
GP800NSS33
Single Switch IGBT Module Preliminary Information
Replaces February 2000 version, DS5358-2.0 DS5358-2.1 March 2001
FEATURES
s s s
Non Punch Through Silicon Isolated Copper Baseplate with AL2O3 Substrate Low Inductance Internal Construction
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
3300V 3.6V 800A 1600A
APPLICATIONS
s s s s
High Power Inverters Motor Controllers Induction Heating Resonant Converters Aux C
External connection C1 C2
The Powerline range of high power modules includes dual, half bridge and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP800NSS33 is a single switch 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.
G Aux E E1 E2
External connection Fig. 1 Single switch circuit diagram
C1
ORDERING INFORMATION
Order As: GP800NSS33 Note: When ordering, please use the whole part number.
E2 G
E1
C1
E2
C2
E2 - Aux Emitter C1 - Aux Collector
Outline type code: N (See package details for further information) Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP800NSS33
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax Visol Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Isolation voltage Tcase = 70°C 1ms, Tcase = 110°C Tcase = 25°C, Tj = 150°C Commoned terminals to base plate. AC RMS, 1 min, 50Hz VGE = 0V Test Conditions Max. 3300 ±20 800 1600 8.3 6 Units V V A A kW kV
THERMAL AND MECHANICAL RATINGS
Symbol Rth(j-c) Parameter Thermal resistance - transistor Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Tj Junction temperature Transistor Diode T stg Storage temperature range Screw torque Mounting - M6 Electrical connections - M4 Electrical connections - M8 40 125 125 125 5 2 10 °C °C °C Nm Nm Nm 8 °C/kW 30 °C/kW Min. Max. 15 Units °C/kW
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP800NSS33
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise. Symbol I CES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125°C I GES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = ±20V, VCE = 0V IC = 120mA, VGE = VCE VGE = 15V, IC = 800A VGE = 15V, IC = 800A, , Tcase = 125°C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF = 800A IF = 800A, Tcase = 125°C Cies LM Input capacitance Module inductance VCE = 25V, VGE = 0V, f = 1MHz Min. 4 Typ. 3.6 4.5 2.3 2.4 200 15 Max. 2 70 12 7.5 4.3 5 800 1600 2.9 3 Units mA mA µA V V V A A V V nF nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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