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Details, datasheet, quote on part number:PT85QWx45
 
 
Part:PT85QWx45
Category:Discrete => Thyristors
Description:90ka 4500v Pulse Power Thyristor
Company:Dynex Semiconductor
Datasheet:Download PT85QWx45 datasheet   File size : 68 kB
Request For quote:  Find where to buy PT85QWx45
 



Datasheet text preview:
PT85QWx45
PT85QWx45
Pulse Power Thyristor Switch Preliminary Information
DS5334-1.2 April 2000
APPLICATIONS
q q q
Pulse Power Crowbars Ignitron Replacement
KEY PARAMETERS 4500V VDRM IT(AV) 1670A ITSM 37000A dI/dt 22000A/µs
FEATURES
q q q
Double Side Cooling Fast Turn-on Low Turn-on Losses
VOLTAGE RATINGS
Type Number Repetitive Peak Voltages VDRM /VRRM V 4500/16 Conditions
PT85QWx45
Tvj = 0° to 125°C, IDRM = IRRM = 50mA, VDRM, VRRM tp = 10ms Outline type code: W. See Package Details for further information.
Lower voltage grades available.
Fig.1 Package outline
CURRENT RATINGS
Symbol Double Side Cooled IT(AV) IT(RMS) Mean on-state current RMS value Half wave resistive load, Tcase = 80oC Tcase = 80oC 1670 2625 A A Parameter Conditions Max. Units
1/6
PT85QWx45
SURGE RATINGS
Symbol I TSM I2t I TSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; Tcase = 125oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 125oC VR = 0 Max. 29.6 4.38 x 106 37.0 6.85 x 106 Units kA A2s kA A2s
THERMAL AND MECHANICAL DATA
Symbol Rth(j-c) Rth(c-h) Parameter Thermal resistance - junction to case Thermal resistance - case to heatsink Conditions Double side cooled Clamping force 40kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) T stg Storage temperature range Clamping force ­55 36.0 125 125 44.0
o
Min. dc Double side -
Max. 0.01 0.001
Units
o
C/W C/W
o
o
-
135
C
C C
o
kN
DYNAMIC CHARACTERISTICS
Symbol IRRM/IDRM dV/dt dI/dt Parameter Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Rate of rise of on-state current Conditions At VRRM/VDRM, Tcase = 125oC To 67% VDRM Tj = 125oC. Rgk 1.5 From 67% VDRM to 90kA Gate source 130A tr = 1.5µs, Tj = 25oC At Tvj = 125oC At Tvj = 125oC Non-repetitive Typ. Max. 250 200 22000 Units mA V/µs A/µs
VT(TO) rT
Threshold voltage On-state slope resistance
-
1.45 0.3
V m
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT IGT 2/6 Parameter Gate trigger voltage Gate trigger current Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC Typ. 1.0 Max. 4.0 1.5 Units V A
PT85QWx45
ORDERING INFORMATION
PT 85Q W x 45 Pulse Power Thyristor Device type Package outline type code lead length (see table, right) Voltage x100 O C D E F G H J K L Lead length (x) No lead 8" 10" 12" 16" 18" 20" 24" 30" 40" 200mm 250mm 300mm 400mm 450mm 500mm 600mm 750mm 1000mm
CURVES
5000 1 2
4000
Instantaneous on-state current, IT - (A)
1: Tj = 25°C Max 2: Tj = 125°C Max 3000
2000
1000
Measured under pulse conditions 0 1.0 2.0 3.0 4.0 Instantaneous on-state voltage, VT - (V)
Fig.2 Maximum (limit) on-state characteristics
5.0
3/6