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Details, datasheet, quote on part number:XT2116-801
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Datasheet text preview:
XT2116
XT2116
Fast Turn-on Asymmetric Thyristor Advance Information
Replaces March 1998 version, DS4674-2.2 DS4674-3.0 January 2000
APPLICATIONS
s Pulse Modulators s Laser Diode Triggering s Capacitor Discharge Applications
KEY PARAMETERS 1600V VDRM 50A IT(AV) 800A ITSM dIdt 2000A/µs dV/dt 300V/µs 350ns ton
FEATURES
s The XT2116 is Asymmetrical Thyristor in which the reverse voltage capability has been sacrificed to enable a high forward blocking characteristic combined with excellent turn-on performance. s Designed for rapid and efficient switching of high current pulses.
Outline type code: SO28. See Package Details for further information.
VOLTAGE RATINGS
Type Number Max. Rise Time tr (Tcase = 25°C) ns 100 120 120 140 160 Repetitive Peak Voltage VDRM V 1600 1400 1200 1000 800 VRRM* V <2 <2 <2 <2 <2 Peak Working Voltages VDWM V 1600 1400 1200 1000 800 VRWM* V <2 <2 <2 <2 <2
XT2116 - 1601 XT2116 - 1401 XT2116 - 1201 XT2116 - 1001 XT2116 - 801
CURRENT RATINGS
Symbol IT(AV) I T(RMS) IT Parameter Mean on-state current RMS value Continuous (direct) on-state current Conditions Half wave resistive load, Tcase = 80oC Tcase = 80oC Tcase = 85oC Max. 50 79 68 Units A A A
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XT2116
SURGE RATINGS
Symbol I TSM I2t Parameter Surge (non-repetitive) forward current I2t for fusing 10ms half sine; Tcase = 125oC 3200 A2s Conditions Max. 800 Units A
THERMAL AND MECHANICAL DATA
Symbol R th(j-c) Rth(c-h) Tvj T stg Parameter Thermal resistance - junction to case Thermal resistance - case to heatsink Virtual junction temperature Storage temperature range Mounting torque d.c. Mounting torque 3.5Nm with mounting compound On-state (conducting) Conditions Min. -55 3.5* Max. 0.35 0.25 125 125 4.0 Units
o
C/W C/W
o
o
C C
o
Nm
* Recommended value.
DYNAMIC CHARACTERISTICS
Tcase = 25°C unless otherwise stated. Symbol VTM IRRM/IDRM dV/dt dI/dt IL IH td tq
Parameter Maximum on-state voltage Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Rate of rise of on-state current Latching current Holding current Delay time Circuit commutated turn-off time At IT = 100A At VRRM/VDRM
Conditions
Typ. 45 35 -
Max. 2.0 10/10 300 2000 250 120
Units V mA V/µs A/µs mA mA ns µs
Tj = 125oC, To VDRM, RGK = 47 Half sine wave of 2µs, Tj = 125°C Gate source 20V, 10. tr = 160ns VD = 400V, gate source = 500mA, tr = 50ns
IT = 25A, VRM = 0V, VDR = VDWM, Tcase =120°C,
RGK = 47, dV/dt = 100V/µs.
Available to 10µs.
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XT2116
GATE TRIGGER CHARACTERISTICS AND RATINGS
Tcase = 25°C unless otherwise stated. Symbol VGT IGT VFGM VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Average gate power VDWM = 12V VDWM = 12V Conditions Typ. 0.9 Max. 3.0 100* 40 10 10 40 10 Units V mA V V A W W
*Recommended trigger current not less than 500mA, tr < 50ns.
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