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Details, datasheet, quote on part number:1N5401G
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| Part: | 1N5401G |
| Category: | Discrete => Diodes & Rectifiers => General Purpose Diodes |
| Description: | 100 V, 3.0 a Silicon Rectifier |
| Company: | EIC Semiconductor Incorporated |
| Datasheet: | Download 1N5401G datasheet File size : 17 kB |
| Request For quote: | Find where to buy 1N5401G
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Datasheet text preview:
1N5400G - 1N5408G
PRV : 50 - 1000 Volts Io : 3.0 Amperes
FEATURES :
* * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
DO - 201AD
0.21 (5.33) 0.19 (4.83)
1.00 (25.4) MIN. 0.375 (9.53) 0.285 (7.24) 1.00 (25.4) MIN.
MECHANICAL DATA :
* Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 1.21 grams
0.052 (1.32) 0.048 (1.22)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 75 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 3.0 Amps. Maximum DC Reverse Current at rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C
SYMBOL 1N5400G 1N5401G 1N5402G 1N5404G 1N5406G 1N5407G 1N5408G UNIT VRRM VR M S VDC IF(AV) 50 35 50 100 70 100 200 140 200 400 280 400 3.0 600 420 600 800 560 800 1000 700 1000 Volts Volts Volts Amps.
IFSM VF IR IR(H) CJ RJA TJ TSTG
150 1.0 5.0 50 50 15 - 65 to + 175 - 65 to + 175
Amps. Volts µA µA pF °C/W °C °C
Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Junction Temperature Range Storage Temperature Range Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
UPDATE : MAY 27, 1998
RATING AND CHARACTERISTIC CURVES ( 1N5400G - 1N5408G )
FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES
3.0 150
FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES
Ta = 25 °C
2.4
120
1.8
90
1.2
60
0.6
30
0
0
25
50
75
100
125
150
175
0
1
2
4
6
10
20
40
60
100
CASE TEMPERATURE, ( °C) FIG.3 - TYPICAL FORWARD CHARACTERISTICS
NUMBER OF CYCLES AT 60Hz FIG 4 . - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
100
100 50
TJ = 25 °C
FORWARD CURRENT, AMPERES
10
10 5
1.0
Pulse Width = 300 µs 2 % Duty Cycle TJ = 25 °C
1
1
2
4
10
20
40
100
REVERSE VOLTAGE, VOLTS
0.1
FIG. 5 - TYPICAL REVERSE CHARACTERISTICS
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
REVERSE CURRENT, MICROAMPERES
0.01
10
FORWARD VOLTAGE, VOLTS
Ta = 100 °C
1.0
0.1
Ta = 25 °C
0.01 0 20 40 60 80 100 120 140
PERCENT OF RATED REVERSE VOLTAGE, (%)
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