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Details, datasheet, quote on part number:1N5407
 
 
Part:1N5407
Category:Discrete => Diodes & Rectifiers => General Purpose Diodes
Description:Silicon Rectifier Diodes
Company:EIC Semiconductor Incorporated
Datasheet:Download 1N5407 datasheet   File size : 40 kB
Request For quote:  Find where to buy 1N5407
 



Datasheet text preview:
1N5400 - 1N5408
PRV : 50 - 1000 Volts Io : 3.0 Amperes
FEATURES :
* * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop

SILICON RECTIFIER DIODES DO - 201AD

0.21 (5.33) 0.19 (4.83)

1.00 (25.4) MIN.

0.375 (9.53) 0.285 (7.24)

MECHANICAL DATA :
* Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.929 grams

0.052 (1.32) 0.048 (1.22)

1.00 (25.4) MIN.

Dimensions in inches and ( millimeters )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.

RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 75 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 3.0 Amps. Maximum DC Reverse Current at rated DC Blocking Voltage Typical Thermal Resistance (Note2) Junction Temperature Range Storage Temperature Range
Notes :

SYMBOL VRRM VRMS VDC IF I FSM VF IR IR(H) CJ RJA TJ TSTG

1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408

UNIT V V V A A V µA µA pF °C/W °C °C

50 35 50

100 70 100

200 140 200

400 280 400 3.0 200 0.95 5.0 50 28 15

600 420 600

800 560 800

1000 700 1000

Ta = 25 °C Ta = 100 °C

Typical Junction Capacitance (Note1)

- 65 to + 175 - 65 to + 175

(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.

Page 1 of 2

Rev. 01 : Mar 23, 2002

RATING AND CHARACTERISTIC CURVES ( 1N5400 - 1N5408 )
FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES
3.0 250

FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES

2.4

200

1.8

150

1.2

100

0.6

50

8.3ms SINGLE HALF SINE-WAVE (JEDEC) Method 1 2 4 6 10 20 40 60 100

0

0

25

50

75

100

125

150

175

0

AMBIENT TEMPERATURE, ( °C) FIG.3 - TYPICAL FORWARD CHARACTERISTICS JUNCTION CAPACITANCE (pF)

NUMBER OF CYCLES AT 60Hz

FIG 4 . - TYPICAL JUNCTION CAPACITANCE

100

100 50 TJ = 25 °C

FORWARD CURRENT, AMPERES

10

10 5

Pulse Width = 300 µs 2% Duty Cycle 1.0 TJ = 25 °C

1

1

2

4

10

20

40

100

REVERSE VOLTAGE, VOLTS
0.1

FIG. 5 - TYPICAL REVERSE CHARACTERISTICS
0.01 0 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Ta = 100 °C

REVERSE CURRENT, MICROAMPERES

FORWARD VOLTAGE, VOLTS

1.0

0.1 Ta = 25 °C

0.01 0 20 40 60 80 100 120 140

PERCENT OF RATED REVERSE VOLTAGE, (%)

Page 2 of 2

Rev. 01 : Mar 23, 2002