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Part: 1N5408
Category:
Discrete
-> Diodes & Rectifiers
-> General Purpose Diodes
Description: Silicon Rectifier Diodes
Company: EIC Semiconductor Incorporated
Datasheet: Download 1N5408 datasheet File size : 47 kB
Request For quote: Find where to buy 1N5408
Datasheet text preview:
1N5400 - 1N5408
PRV : 50 - 1000 Volts Io : 3.0 Amperes
FEATURES :
* * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop
SILICON RECTIFIER DIODES DO - 201AD
0.21 (5.33) 0.19 (4.83)
1.00 (25.4) MIN.
0.375 (9.53) 0.285 (7.24)
MECHANICAL DATA :
* Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.929 grams
0.052 (1.32) 0.048 (1.22)
1.00 (25.4) MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 75 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 3.0 Amps. Maximum DC Reverse Current at rated DC Blocking Voltage Typical Thermal Resistance (Note2) Junction Temperature Range Storage Temperature Range
Notes :
SYMBOL VRRM VRMS VDC IF I FSM VF IR IR(H) CJ RJA TJ TSTG
1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408
UNIT V V V A A V µA µA pF °C/W °C °C
50 35 50
100 70 100
200 140 200
400 280 400 3.0 200 0.95 5.0 50 28 15
600 420 600
800 560 800
1000 700 1000
Ta = 25 °C Ta = 100 °C
Typical Junction Capacitance (Note1)
- 65 to + 175 - 65 to + 175
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2
Rev. 01 : Mar 23, 2002
RATING AND CHARACTERISTIC CURVES ( 1N5400 - 1N5408 )
FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES
3.0 250
FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES
2.4
200
1.8
150
1.2
100
0.6
50
8.3ms SINGLE HALF SINE-WAVE (JEDEC) Method 1 2 4 6 10 20 40 60 100
0
0
25
50
75
100
125
150
175
0
AMBIENT TEMPERATURE, ( °C) FIG.3 - TYPICAL FORWARD CHARACTERISTICS JUNCTION CAPACITANCE (pF)
NUMBER OF CYCLES AT 60Hz
FIG 4 . - TYPICAL JUNCTION CAPACITANCE
100
100 50 TJ = 25 °C
FORWARD CURRENT, AMPERES
10
10 5
Pulse Width = 300 µs 2% Duty Cycle 1.0 TJ = 25 °C
1
1
2
4
10
20
40
100
REVERSE VOLTAGE, VOLTS
0.1
FIG. 5 - TYPICAL REVERSE CHARACTERISTICS
0.01 0 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Ta = 100 °C
REVERSE CURRENT, MICROAMPERES
FORWARD VOLTAGE, VOLTS
1.0
0.1 Ta = 25 °C
0.01 0 20 40 60 80 100 120 140
PERCENT OF RATED REVERSE VOLTAGE, (%)
Page 2 of 2
Rev. 01 : Mar 23, 2002
Others parts begin by 1n
1N-1 1N-2 1N-3 1N-4 1N-5 1N-6 1N-7 1N-8 1N-9 1N-10 1N-11 1N-12 1N-13 1N-14 1N-15 1N-16 1N-17 1N-18 1N-19 1N-20 1N-21 1N-22 1N-23 1N-24 1N-25 1N-26 1N-27 1N-28 1N-29 1N-30 1N-31 1N-32 1N-33 1N-34 1N-35 1N-36 1N-37 1N-38 1N-39 1N-40 1N-41 1N-42 1N-43 1N-44 1N-45 1N-46 1N-47 1N-48 1N-49 1N-50 1N-51 1N-52 1N-53 1N-54 1N-55 1N-56 1N-57 1N-58 1N-59 1N-60 1N-61 1N-62 1N-63 1N-64 1N-65 1N-66 1N-67 1N-68 1N-69 1N-70 1N-71 1N-72 1N-73 1N-74 1N-75 1N-76 1N-77 1N-78 1N-79 1N-80
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