Details, datasheet, quote on part number: B125-C1000
PartB125-C1000
CategoryDiscrete => Diodes & Rectifiers => General Purpose Diodes
Description300 V, 1.0 a Silicon Bridge Rectifier
CompanyEIC Semiconductor Incorporated
DatasheetDownload B125-C1000 datasheet
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Features, Applications

High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board

* Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated leads solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 1.29 grams

Rating 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Maximum Recurrent Peak Reverse Voltage Maximum RMS Input Voltage R+C -Load Maximum DC Blocking Voltage Maximum Average Forward Current For Free Air Operation = 45C R+L -Load C -Load Peak Forward Surge Current Single half sine wave on rated load (JEDEC Method) 125 C Rating for fusing < 100 ms.) Maximum Series Resistor C-Load VRMS 10% Maximum load Capacitance 50% -10% Maximum Forward Voltage per Diode = 1.0 Amp. Maximum Reverse Current at Rated Repetitive Peak Voltage per Diode 25 C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range

1 ) Thermal resistance from Junction to Ambient 0.375" (9.5 mm) lead length P.C. Board with, x 5.5 mm) copper Pads.

FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT B380 C1000 BRIDGE OUTPUT FULL WAVE RECTIFIED CURRENT AVERAGE AMPERES

BRIDGE OUTPUT FULL WAVE RECTIFIED CURRENT AVERAGE AMPERES

FIG.4 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MICROAMPERES
PERCENT OF RATED REVERSE VOLTAGE, FIG.6 - TYPICAL JUNCTION CAPACITANCE PER BRIDGE ELEMENT

 

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