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Details, datasheet, quote on part number:GR1G
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| Part: | GR1G |
| Category: | Discrete => Diodes & Rectifiers => Fast Recovery Diodes |
| Description: | Glass Passivated Rectifier Diodes |
| Company: | EIC Semiconductor Incorporated |
| Datasheet: | Download GR1G datasheet File size : 49 kB |
| Request For quote: | Find where to buy GR1G
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Datasheet text preview:
GR1A - GR1M
PRV : 50 - 1000 Volts Io : 1.0 Ampere
FEATURES :
* * * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency
GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS
SMA (DO-214AC)
1.1 ± 0.3
5.0 ± 0.15
4.5 ± 0.15
1.2 ± 0.2 2.6 ± 0.15 2.1 ± 0.2
0.2 ± 0.07
2.0 ± 0.2
MECHANICAL DATA :
* * * * * * Case : SMA Molded plastic Epoxy : UL94V-O rate flame retardant Lead : Lead Formed for Surface Mount Polarity : Color band denotes cathode end Mounting position : Any Weight : 0.067 gram
Dimensions in millimeter
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Ta = 55 °C Peak Forward Surge Current, 8.3ms Single half sine wave superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at IF = 1.0 A Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 125 °C
SYMBOL
GR1A
GR1B
GR1D
GR1G
GR1J
GR1K GR1M
UNIT
VR R M VRMS VD C I F(AV)
50 35 50
100 70 100
200 140 200
400 280 400 1.0
600 420 600
800 560 800
1000 700 1000
V V V A
I FSM VF IR I R(H)
Trr
35 1.3 5 150 150 15 - 65 to + 150 - 65 to + 150 250 500
A V µA µA ns pf °C °C
Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Junction Temperature Range Storage Temperature Range
CJ TJ TS T G
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
Rev. 01 : April 17, 2002
RATING AND CHARACTERISTIC CURVES ( GR1A - GR1M )
F I G . 1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 10 + 0.5 Trr
+
5 0 Vdc (approx)
D.U.T. PULSE GENERATOR ( NOTE 2 ) 1 OSCILLOSCOPE ( NOTE 1 )
0 - 0.25
- 1.0 A S E T TIME BASE FOR 50/100 ns/cm
N O T E S : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types.
1
F I G . 2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES
1.0 30
F I G . 3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES
8 . 3 ms SINGLE HALF SINE W A V E 24 T a = 50 °C
0.8
0.6
18
0.4
12
0.2 6 0 H z RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 175
6
0
1
2
4
6
10
20
40
60 1 0 0
A M B I E N T TEMPERATURE, ( °C) F I G . 4 - TYPICAL FORWARD CHARACTERISTICS
20 10 P u l s e W i d t h = 300 µs 2 % Duty Cycle TJ = 25 °C 1.0
N U M B E R OF CYCLES AT 60Hz
F I G . 5 - TYPICAL REVERSE CHARACTERISTICS
FORWARD CURRENT, AMPERES
10
TJ = 100 °C
REVERSE CURRENT, MICROAMPERES
1.0
0.1
0.1 TJ = 25 °C
0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.01
0
20
40
60
80
100
120
140
F O R W A R D VOLTAGE, VOLTS
P E R C E N T OF RATED REVERSE VOLTAGE, (%)
Page 2 of 2
R e v . 01 : April 2, 2002
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