Digchip : Database on electronics components
Electronic components database
Search:                      In section:
Member, Distributor  
Log In
Email:
Password:

Details, datasheet, quote on part number:GR2G
 
 
Part:GR2G
Category:Discrete => Diodes & Rectifiers => Fast Recovery Diodes
Description:Glass Passivated Rectifier Diodes
Company:EIC Semiconductor Incorporated
Datasheet:Download GR2G datasheet   File size : 49 kB
Request For quote:  Find where to buy GR2G
 



Datasheet text preview:
GR2A - GR2M
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency
GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS
SMB (DO-214AA)
1.1 ± 0.3
5.4 ± 0.15
4.8 ± 0.15
2.0 ± 0.1 3.6 ± 0.15 2.3 ± 0.2
0.22 ± 0.07
MECHANICAL DATA :
* Case : SMB Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Lead Formed for Surface Mount * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.1079 gram
Dimensions in millimeter
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Ta = 75 °C Peak Forward Surge Current, 8.3ms Single half sine wave superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at IF = 2.0 A Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C
SYMBOL
GR2A
GR2B
GR2D
GR2G
GR2J
GR2K GR2M
UNIT
VR R M VRMS VD C I F(AV)
50 35 50
100 70 100
200 140 200
400 280 400 2.0
600 420 600
800 560 800
1000 700 1000
V V V A
I FSM VF IR IR(H)
Trr
75 1.3 10 500 150 15 - 65 to + 150 - 65 to + 150 250 500
A V µA µA ns pf °C °C
Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Junction Temperature Range Storage Temperature Range
Notes :
CJ TJ TSTG
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
Rev. 01 : April 17, 2002
RATING AND CHARACTERISTIC CURVES ( GR2A - GR2M )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 10 + 0.5 Trr
+
D.U.T. 50 Vdc (approx) 1 PULSE GENERATOR ( NOTE 2 ) OSCILLOSCOPE ( NOTE 1 )
0 - 0.25
- 1.0 A SET TIME BASE FOR 50-100 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types.
1
FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES
2.0 75
FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES
8.3 ms SINGLE HALF SINE WAVE 60 Ta = 55 °C
1.6
1.2
45
0.8
30
0.4 60Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 175
15
0
1
2
4
6
10
20
40
60 100
AMBIENT TEMPERATURE, ( °C) FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100 10
NUMBER OF CYCLES AT 60Hz
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
FORWARD CURRENT, AMPERES
TJ = 25 °C 10
REVERSE CURRENT, MICROAMPERES
Pulse Width = 300 µs 2% Duty Cycle
TJ = 100 °C
1.0
1.0
0.1 TJ = 25 °C
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE VOLTAGE, (%)
0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORW A R D VOLTAGE, VOLTS
Page 2 of 2
Rev. 01 : April 2, 2002