Details, datasheet, quote on part number: KBP200
PartKBP200
CategoryDiscrete => Diodes & Rectifiers => General Purpose Diodes
DescriptionSilicon Bridge Rectifiers
CompanyEIC Semiconductor Incorporated
DatasheetDownload KBP200 datasheet
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Features, Applications

High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board

* Case : Molded plastic * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 3.4 grams

Rating 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current = 50C Peak Forward Surge Current, Single half sine wave Superimposed on rated load (JEDEC Method) Rating for fusing < 8.3 ms. 100 C

Maximum Forward Voltage per Diode = 1.0 Amp. Maximum DC Reverse Current at Rated DC Blocking Voltage

Typical Junction Capacitance per Diode (Note 1) Typical Thermal Resistance (Note 2) Operating Junction Temperature Range Storage Temperature Range Notes :

1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts. 2 ) Thermal resistance from Junction to Ambient with units mounted 12mm ) Cu. Pads.

FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES
FIG.4 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MICROAMPERES

 

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KBP201
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