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Details, datasheet, quote on part number:RBV1004
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| Part: | RBV1004 |
| Category: | Discrete => Diodes & Rectifiers => General Purpose Diodes |
| Description: | 400 V, 10 A, Silicon Bridge Rectifier |
| Company: | EIC Semiconductor Incorporated |
| Datasheet: | Download RBV1004 datasheet File size : 20 kB |
| Request For quote: | Find where to buy RBV1004
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Datasheet text preview:
RBV1000 - RBV1010
PRV : 50 - 1000 Volts Io : 10 Amperes
FEATURES :
* * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 V DC Ideal for printed circuit board Very good heat dissipation
SILICON BRIDGE RECTIFIERS
RBV25
3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 3.2 ± 0.1 20 ± 0.3
+
13.5 ± 0.3
~~
11 ± 0.2
1.0 ± 0.1
MECHANICAL DATA :
* Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams
10 7.5 7.5 ±0 . 2 ±0 . 2 ±0 . 2
2.0 ± 0.2 0.7 ± 0.1
Dimensions in millimeters
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55 °C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at I F = 5.0 Amps. Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range Ta = 100 °C
SYMBOL
RBV 1000 50 35 50
RBV 1001 100 70 100
RBV 1002 200 140 200
RBV 1004 400 280 400 10 300 160 1.0 10 200 2.5
RBV 1006 600 420 600
RBV 1008 800 560 800
17.5 ± 0.5
RBV 1010 1000 700 1000
UNIT Volts Volts Volts Amps. Amps. AS Volts µA µA °C/W °C °C
2
VRRM VRMS
VDC
I F(AV) IFSM It VF IR IR(H) RJC TJ T STG
2
- 40 to + 150 - 40 to + 150
Notes : 1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate.
UPDATE : NOVEMBER 1,1998
RATING AND CHARACTERISTIC CURVES ( RBV1000 - RBV1010 )
FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT AMPERES
12
FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
300
10
PEAK FORWARD SURGE CURRENT, AMPERES
250
8
200
TJ = 50 °C
6
150
4 HEAT-SINK MOUNTING, Tc 3.2" x 3.2" x 0.12" THK. (8.2cm x 8.2cm x 0.3cm) Al.-FINNED PLATE 0 25 50 75 100 125 150 175
100 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD
2
50
0
0
1
2
4
6
10
20
40
60 100
CASE TEMPERATURE, ( °C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE
10
TJ = 100 °C
FORWARD CURRENT, AMPERES
REVERSE CURRENT, MICROAMPERES
10 Pulse Width = 300 µs 1 % Duty Cycle 1.0
1.0
0.1
TJ = 25 °C
TJ = 25 °C
0.1 0.01 0 20 40 60 80 100 120 140
PERCENT OF RATED REVERSE VOLTAGE, (%)
0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
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