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Details, datasheet, quote on part number:RBV1004D
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Datasheet text preview:
RBV1000D - RBV1010D
PRV : 50 - 1000 Volts Io : 10 Amperes
F E ATURES :
* * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC Ideal for printed circuit board Very good heat dissipation
SILICON BRIDGE RECTIFIERS
RBV25
3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 3.2 ± 0.1 20 ± 0.3
+
13.5 ± 0.3
~~
11 ± 0.2
1.0 ± 0.1
MECHANICAL DATA :
* Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams
10
7.5 7.5
2.0 ± 0.2 0.7 ± 0.1
±0 . 2 ±0 . 2 ±0 . 2
Dimensions in millimeters
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 10 Amps. Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C
SYM BOL
VRRM VRMS
V DC
RBV RBV RBV RBV RBV RBV RBV 1000D 1001D 1002D 1004D 1006D 1008D 1010D 50 100 200 400 600 800 1000 35 50 70 100 140 200 280 400 10 420 600 560 800 700 1000
17.5 ± 0.5
UNIT Volts Volts Volts Am p s . Am p s . A2S Volts µA µA °C/W °C °C
IF(AV) IFSM It VF IR IR(H) RJC TJ TSTG
2
300 166 1.0 10 200 2.2 - 40 to + 150 - 40 to + 150
Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range
Notes :
1. Thermal Resistance from junction to case w ith units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate.
UPDATE : NOVEMBER 1,1998
RATING AND CHARACTERISTIC CURVES ( RBV1000D - RBV1010D )
AVERAGE FORWARD OUTPUT CURRENT AMPERES
FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT
12
FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES
300
10
250
8
200
TJ = 50 °C
6
150
4 HEAT-SINK MOUNTING, Tc 3.2" x 3.2" x 0.12" THK. (8.2cm x 8.2cm x 0.3cm) Al.-FINNED PLATE 0 25 50 75 100 125 150 175
100
2
50
8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD
0
0
1
2
4
6
10
20
40
60 100
CASE TEMPERATURE, ( °C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE
10
FORWARD CURRENT, AMPERES
REVERSE CURRENT, MICROAMPERES
TJ = 100 °C
10 Pulse Width = 300 µs 1 % Duty Cycle 1.0
1.0
0.1
TJ = 25 °C
TJ = 25 °C
0.1 0.01 0 20 40 60 80 100 120 140
PERCENT OF RATED REVERSE VOLTAGE, (%)
0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
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