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Part: EL883G
Category:
Logic
-> Buffers/Drivers
Description: High Accuracy Fast Buffer
Company: Elantec Semiconductor, Inc. (acquired by Intersil)
Datasheet: Download EL883G datasheet File size : 262 kB
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Datasheet text preview:
EL2005 EL2005C
EL2005 EL2005C
High Accuracy Fast Buffer
Features
Low input current 50 pA 2 ow offset and drift L mV 25 mV C High slew rate 1500 V ms Fast rise and fall time 2 5 ns High input resistance 1000 GX Bandwidth 140 MHz Pin compatible with ELH0033 MIL-STD-883 Revision C devices A anufactured in U S A m
eneral Description
The EL2005 is a high-speed FET input buffer similar to ELH0033 and EL2004 but with input specifications significantly improved over the previous types The input stage employs a cascode configuration to maintain constant input characteristics over the full g 10V input range The input looks like a 3 pF capacitor to ground in almost all cases since the DC bias current is constant with input voltage In sample and hold circuits this results in an order of magnitude improvement in hold characteristics Input offset voltage and offset voltage drift are also T improved a factor of two over previous types hese excellent DC characteristics are complemented by a wide 140 MHz bandwidth while the 1500 V ms slew rate and excellent phase linearity of the ELH0033 family are preserved allowing direct plug-in replacement for upgraded performance (For even faster operation see EL2004 ) Elantec facilities comply with MIL-I-45208A and are MILSTD-1772 certified Elantec's Military devices comply with MIL-STD-883B Revision C and are manufactured in our rigidly controlled ultra-clean facilities in Milpitas California For additional information on Elantec's Quality and Reliability Assurance Policy and procedures request brochure QRA-1 S
dvantages
No input loading Input current independent of input voltage Eliminates offset adjustments Drives cables directly
Ordering Information
E Part No
Temp Range
b 25 b 55
Package Outline TO-8 TO-8 TO-8 MDP0002 MDP0002 MDP0002
L2005CG EL2005G
C to a 85 C C to a 125 C
EL2005G 883B b 55 C to a 125 C
implified Schematic
Connection Diagram
January 1990 Rev F
2005 1
Top View
Note Case is electrically isolated G
2005 2
Note All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication however this data sheet cannot be a ``controlled document'' Current revisions if any to these specifications are maintained at the factory and are available upon your request We recommend checking the revision level before finalization of your design documentation Patent pending CMS 2005DS
1989 Elantec Inc
EL2005 EL2005C
High Accuracy Fast Buffer
Absolute Maximum Ratings (TA e 25 C)
VS VIN PD IOC IOP Supply Voltage (V a b Vb) Input Voltage Power Dissipation (See curves) Continuous Output Current Peak Output Current 40V 40V 1 5W g 100 mA g 250 mA TA Operating Temperature Range EL2005 EL2005C Operating Junction Temperature Storage Temperature Lead Temperature (Soldering 10 seconds)
b 55 C to a 125 b 25 C to a 85
TJ TST
C C 175 C b 65 C to a 150 C
300 C
A Important Note ll parameters having Min Max specifications are guaranteed The Test Level column indicates the specific device testing actually performed during production and Quality inspection Elantec performs most electrical tests using modern high-speed automatic test equipment specifically the LTX77 Series system Unless otherwise noted all tests are pulsed tests therefore TJ e TC e TA T est Level I I I I III V V D Test Procedure 100% production tested and QA sample tested per QA test plan QCX0002 100% production tested at TA e 25 C and QA sample tested at TA e 25 C T MAX and TMIN per QA test plan QCX0002 QA sample tested per QA test plan QCX0002 Parameter is guaranteed (but not tested) by Design and Characterization Data Parameter is typical value at TA e 25 C for information purposes only
C Electrical Characteristics VS e g 15V
Parameter Description Test Conditions
VIN e 0V TMIN s TA s TMAX EL2005 Min Test Typ Max Level 2 5 10 25 65 75 2 50 2 0 0 97 88 0 98 0 95 50 500 5 10 0 98 I I V I I IV I I I I I 8 I 0 96 0 88 60 25 75 5 100 05 0 98 0 95 100 1000 5 10 0 99 Min EL2005C Typ Max 3 10 15 Test Units Level I III V II I IV III II II IV I 9 II mV mV mV C dB pA pA nA VV VV X X X
VOS
Output Offset Voltage
RS s 100 kX TJ e 25 C (Note 1) RS s 100 kX
DVOS DT
Average Temperature Coefficient of RS e 100X Offset Voltage Supply Rejection Input Bias Current
g 10V s VS s g 20V
PSRR IB
TJ e 25 C (Notes 1 and 3) TA e 25 C (Notes 2 and 3) TJ e TA e TMAX
AV
Voltage Gain
RS e 100X RL e 1 kX VIN e g 10V RS e 100X RL e 100X vIN e g 10V
RIN
Input Impedance
RL e 1 kX b 10V s VIN s g 10V TJ e 25 C (Note 1) RL e 1 k X
2
c 109 1012
2 c 109 1012 1010 1012 4
RO
Output Impedance
RL e 1 kX VIN e g 1V
4
2
TD is 3 8in
1 10 0
1012
EL2005 EL2005C
High Accuracy Fast Buffer
DC Electrical Characteristics VS e g 15V
Parameter Description Test Conditions Min VO Output Voltage Swing VIN e g 14V RL e 1 k X VIN e g 10 5V RL e 100X TA e 25 C IS PD Supply Current VIN e 0 (Note 1) Power Consumption VIN e 0 g 9 Typ g 12 5 Max VIN e 0V TMIN s TA s TMAX EL2005 Test Min Level V I 22 660 I I
g9
Contd
EL2005C Typ
g 12 5
Max
Test Units Level V I V V mA mW TD is 1 7in TD is 2 5in
g9 8
g9 8
19 570
19 570
24 720
II II
AC Electrical Characteristics TC e 25 C
Parameter Description Test Conditions
VS e g 15V RS e 50X RL e 1 kX EL2005 EL2005C Units
Test Test Min Typ Max Min Typ Max Level Level III V V V V V 10 8 I I 0 96 1000 1500 140 2 25 10
k0 1
SR BW wNL tr tP HD AV RO
Slew Rate Bandwidth Phase Non-Linearity Rise Time
VIN e g 10V VOUT e g 5V 1000 1500 VIN e 1 Vrms BW e 1 MHz to 20 MHz DVIN e 0 5V 140 2 25 10
k0 1
III V V V V V 10 9 II II
V ms MHz Degree ns ns % VV X
Propagation Delay DVIN e 0 5V Harmonic Distortion Voltage Gain f l1 kHz RS e 100X VIN e 1 Vrms f e 1 kHz 0
97
0 99 4
0 99 4
Output Impedance VIN e 1 Vrms f e 1 kHz
Note 1 Specification is at 25 C junction temperature due to requirements of high-speed automatic testing Actual values at operating temperatures will exceed the value at TJ e 25 C When supply voltages are g 15V no-load operating junction temperatures may rise 40 C to 60 C above ambient and more under load conditions Accordingly VOS may change one to several mV and N IB will change significantly during warm-up Refer to IB vs Temperature graph for expected values Note 2 Measured in still air seven minutes after application of power b ote 3 Input bias current is guaranteed over the input range of 3 10V s VIN s a 10V
EL2005 EL2005C
High Accuracy Fast Buffer
Typical Performance Curves
Maximum Power Dissipation Gain vs Input Voltage Output Resistance vs Output Current
Frequency Response
Supply Current vs Supply Voltage
Offset Voltage vs Supply Voltage
Input Bias Current vs Input Voltage
Input Bias Current vs Temperature
Input Bias Current During Warm-up
2005 3
Rise Time vs Temperature
Small Signal Pulse Response
Large Signal Pulse Response
2005 4
4
EL2005 EL2005C
High Accuracy Fast Buffer
Typical Applications
Offset Zero Adjust Using Resistor Current Limiting Current Limiting Using Current Sources
2005 5
2005 6 2005 7
Q1 e Q2 e 2N2905 Q3 e Q4 e 2N2219
High Input Impedance AC Coupled Amplifier
Coaxial Cable Driver
Select C1 for optimum pulse response
2005 9
2005 8
5
Others parts begin by el
EL-1 EL-2 EL-3 EL-4 EL-5 EL-6 EL-7 EL-8 EL-9 EL-10 EL-11 EL-12 EL-13 EL-14 EL-15 EL-16 EL-17 EL-18
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