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Part: ELH0032
Category:
Analog & Mixed-Signal Processing
-> Amplifiers
-> Operational Amplifiers
-> High Speed
-> Single
Description: Fast op Amp
Company: Elantec Semiconductor, Inc. (acquired by Intersil)
Datasheet: Download ELH0032 datasheet File size : 136 kB
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Datasheet text preview:
ELH0032G 883 8001301ZX
ELH0032G 883 8001301ZX
Fast Operational Amplifier
Features
500 V ms slew rate 70 MHz bandwidth 1012X input impedance 5 mV max input offset voltage FET input Offset nulls with single pot No compensation required for gains above 50 Peak output current to 100 mA MIL-STD-883 devices 100% O anufactured in U S A m
General Description
The ELH0032 is a high slew rate high input impedance differential operational amplifier suitable for diverse application in fast signal handling The high allowable differential input voltage ease of output clamping and high output drive capability make the ELH0032 particularly suitable for comparator applications It may be used in applications normally reserved for video amplifiers allowing the use of operational gain setting and T frequency response shaping into the megahertz region he ELH0032's wide bandwidth high input impedance and high output drive capability make it an ideal choice for applications such as summing amplifiers in high-speed D to A's buffA ers in data acquisition systems and sample and hold circuits dditional applications include high-speed integrators and video amplifiers The ELH0032 is guaranteed over the temperature range b 55 C to a 125 C E lantec facilities comply with MIL-I-45208A and other applicable quality specifications Elantec's Military devices are 100% fabricated and assembled in our rigidly controlled ultra-clean facilities in Milpitas California For additional information on Elantec's Quality and Reliability Assurance policy and proceS res request brochure QRA-1 du
rdering Information
Part No Temp Range Pkg Outline ELH0032G 883B b 55 C to a 125 C TO-8 MDP0002
C 8001301ZX is the SMD version of this device
onnection Diagram
implified Schematic
0032 1
Top View
M Case is electrically isolated
July 1991 Rev F
0032 2
anufactured under U S Patent No 4 746 877
Note All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication however this data sheet cannot be a ``controlled document'' Current revisions if any to these specifications are maintained at the factory and are available upon your request We recommend checking the revision level before finalization of your design documentation CMS 0032DS
1986 Elantec Inc
ELH0032G 883 8001301ZX
Fast Operational Amplifier
Absolute Maximum Ratings
VS VIN PD
g 18V Supply Voltage g 15 VS Input Voltage g 30V or g 2 VS Differential Input Voltage Power Dissipation (Note 1) TA e 25 C 1 5W derate 100 C W to a 125 C TC e 25 C 2 2W derate 70 C W to a 125 C
TA TJ TST
E Operating Temperature Range LH0032 Operating Junction Temperature Storage Temperature Lead Temperature (Soldering 10 seconds)
300 C
A Important Note ll parameters having Min Max specifications are guaranteed The Test Level column indicates the specific device testing actually performed during production and Quality inspection Elantec performs most electrical tests using modern high-speed automatic test equipment specifically the LTX77 Series system Unless otherwise noted all tests are pulsed tests therefore TJ e TC e TA T est Level I I I I III V V D Test Procedure 100% production tested and QA sample tested per QA test plan QCX0002 100% production tested at TA e 25 C and QA sample tested at TA e 25 C T MAX and TMIN per QA test plan QCX0002 QA sample tested per QA test plan QCX0002 Parameter is guaranteed (but not tested) by Design and Characterization Data Parameter is typical value at TA e 25 C for information purposes only
C Electrical Characteristics VS e g 15V
Parameter Description
TMIN s TA s TMAX VIN e 0V ELH0032
Test Conditions Min Typ 2 Max 5 10
Test Level I I I I IV I I IV I I I I I
Units
VOS
Input Offset Voltage
TJ e 25 C (Note 2)
mV mV mV C pA pA nA pA nA nA V dB dB dB dB dB TD is 3 7in
DVOS DT IOS
Average Offset Voltage Drift Input Offset Current TJ e 25 C (Note 2) TA e 25
25
150 25 250 25 100 1 50
C (Note 3)
TJ e Max IB Input Bias Current TJ e 25 C (Note 2) TA e 25 C (Note 3) TJ e TMAX VINCM CMRR AVOL Input Voltage Range Common-Mode Rejection Ratio Open-Loop Voltage Gain VIN e g 10V VO e g 10V RL e 1 kX TJ e 25 C VO e g 10V RL e 1 kX VO e g 10V f e 1 kHz RL e 1 kX TJ e 25 C VO e g 10V f e 1 kHz RL e 1 kX
g 10 g 12
50 48 45 6 0
60 60
70
I I
57
2
TD is 0 7in
C to a 125 C 175 C b 65 C to a 150 C
b 55
ELH0032G 883 8001301ZX
Fast Operational Amplifier
DC Electrical Characteristics VS e g 15V
Parameter Description TMIN s TA s TMAX VIN e 0V
Contd
Test Level I 23 20 I IV I I I Units
ELH0032 Test Conditions Min VO IS Output Voltage Swing Power Supply Current RL e 1 kX TJ e 25
g 10
Typ
g 13 5
Max
V mA mA dB TD is 1 9in TD is 1 3in dB dB
C
IO e 0 mA
21 18 50 5 0 0 60
TA e 25 C IO e 0 mA (Note 3) PSRR Power Supply Rejection Ratio
g 5V s VS s 15V
a 5V s VS( a ) s a 20V
VS(b) e b15V
b 5V t VS( b ) t b 20V VS( a ) e a 15V
5
AC Electrical Characteristics VS e g 15V
Parameter SR tS tS tR tD Slew Rate Settling Time to 1% of Final Value Settling Time to 0 1% of Final Value Small Signal Rise Time Small Signal Delay Time Description
RL e 1 kX TJ e 25 C Min 350 Typ 500 100 300 8 10 20 25 500 Max Test Level I IV V I I Units V ms ns ns ns ns
Test Conditions AV e a 1 DVIN e 20V AV e b1 DVIN e 20V AV e b1 DVIN e 20V AV e a 1 DVIN e 1V AV e a 1 DVIN e 1V
Note 1 In order to limit maximum junction temperature to a 175 C it may be necessary to operate with VS k g 15V when TA or TC exceeds specific values depending on the PD within the device package Total PD is the sum of quiescent and load-related N dissipation ote 2 Specification is at 25 C junction temperature due to requirements of high-speed automatic testing Actual values at operating temperature will exceed the value at TJ e 25 C When supply voltage are g 15V no-load operating junction temperature may rise 40 C 60 C above ambient and more under load conditions Accordingly VOS may change one to several mV and IB N and IOS will change significantly during warm-up Refer to IB and IOS vs temperature graph for expected values ote 3 Measured in still air 7 minutes after application of power3
ELH0032G 883 8001301ZX
Fast Operational Amplifier
Typical Performance Curves
Maximum Power Dissipation Supply Current vs Supply Voltage Input Voltage Range and Output Voltage vs Supply Voltage
Bode Plot (Uncompensated)
Bode Plot (Unity Gain Compensation)
Large Signal Frequency Response
0032 3
4
ELH0032G 883 8001301ZX
Fast Operational Amplifier
Typical Performance Curves
Common Mode Rejection Ratio vs Frequency
Contd
Large Signal Pulse Response
Large Signal Pulse Response
Normalized Input Bias and Offset Current vs Junction Temperature
Normalized Input Bias Current During Warm-Up
Input Bias Current vs Input Voltage
Total Input Noise Voltage vs Frequency 0
0032 4
uxiliary Circuits
Offset Null Output Short Circuit Protection
032 5
Noise voltage includes contribution from source resistance
A
0032 6
0032 7
5
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