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Details, datasheet, quote on part number:V3020TP8B
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Datasheet text preview:
R
EM MICROELECTRONIC-MARIN SA
V3020
Ultra Low Power 1-Bit 32 kHz RTC
Features
n n n n n n n n n n n n n n n n Supply current typically 390 nA at 3 V 50 ns access time with 50 pF load capacitance Fully operational from 1.2 V to 5.5 V No busy states or danger of a clock update while accessing Serial communication on one line of a standard parallel data bus or over a conventional 3 wire serial interface Interface compatible with both Intel and Motorola Seconds, minutes, hours, day of month, month, year, week day and week number in BCD format Leap year and week number correction Time set lock mode to prevent unauthorized setting of the current time or date Oscillator stability 0.3 ppm / volt No external capacitor needed Frequency measurement and test modes o Temperature range -40 to +85 C o On request extended temperature range, -40 to +125 C Pin compatible with the V3021 TSSO8 and SO8 packages
Typical Operating Configuration
WR or R/W
RD or DS
CPU
Address Decoder
Address Bus
CS RD WR I/O XI
Data Bus
V3020
XO
RAM
Description
The V3020 is a low power CMOS real time clock. Data is transmitted serially as 4 address bits and 8 data bits, over one line of a standard parallel data bus. The device is accessed by chip select (CS) with read and write control timing provided by either RD and WR pulse (Intel CPU) or DS with advanced R/W (Motorola CPU). Data can also be transmitted over a conventional 3 wire serial interface having CLK, data I/O and strobe. The V3020 has no busy states and there is no danger of a clock update while accessing. Supply current is typically 390 nA at VDD = 3.0 V. Battery operation is supported by complete functionality down to 1.2 V. The oscillator stability is typically 0.3 ppm/V.
CS RD WR
Fig. 1
Pin Assignment
S08 XI XO VDD WR
V3020
CS VSS RD I/O
Applications
n n n n n n n n n n Utility meters Battery operated and portable equipment Consumer electronics White/brown goods Pay phones Cash registers Personal computers Programmable controller systems Data loggers Automotive systems
TSSO8
WR VDD XI XO
V3020
RD I/O VSS CS Fig. 2
1
R
V3020
Absolute Maximum Ratings
Parameter
Maximum voltage at VDD
Symbol Conditions
VSS + 7.0V VSS - 0.3V VDD + 0.3V VSS - 0.3V +150 C O -65 C 1000V 250OC x 10s
O
VDDmax VDDmin Minimum voltage at VDD Maximum voltage at any signal pin Vmax Minimum voltage at any signal pin Vmin TSTOmax Maximum storage temperature Minimum storage temperature TSTOmin Electrostatic discharge maximum VSmax to MIL-STD-883C method 3015 TSmax Maximum soldering conditions
be taken as for any other CMOS component. Unless otherwise specified, proper operation can only occur when all terminal voltages are kept within the supply voltage range. Unused inputs must always be tied to a defined logic voltage level.
Operating Conditions
Parameter
Operating temperature Logic supply voltage Supply voltage dv/dt (power-up & power-down) Decoupling capacitor Crystal Characteristics 2) Frequency Load capacitance Series resistance
1) 1)
Symbol Min. Typ. Max. Units
TA VDD -40 1.2 +125 5.0 5.5 6 100 f CL RS 32.768 8.2 12.5 35 50
O
C V
V/ms nF kHz pF kW
Table 1 Stresses above these listed maximum ratings may cause permanent damage to the device. Exposure beyond specified operating conditions may affect device reliability or cause malfunction.
7
Handling Procedures
This device has built-in protection against high static voltages or electric fields; however, it is advised that normal precautions
Electrical Characteristics (standard temperature range)
VDD = 5.0V ± 10%, VSS = 0 V and TA = -40 to +85OC, unless otherwise specified
Table 2 The maximum operating temperature is confirmed by sampling at initial device qualification. In production, all o devices are tested at +85 C. On request devices tested at o +125 C can be supplied. 2) See Fig. 5
Parameter
Total static supply
Symbol Test Conditions
ISS all outputs open, all inputs at VDD VDD = 3.0 V, address 0 = 0 TA = 0 to +70 C all outputs open, all inputs at VDD, VDD = 5 V, address 0 = 0 TA = 0 to +70 oC
o
Min.
Typ.
390
Max.
600 490
Unit
nA nA nA nA mA
Total static supply
ISS
460
800 600 300
Dynamic current
ISS
I/O to VSS through 1MW RD = VSS, WR = VDD, CS = 4 MHz address 0 = 0, read all 0 3.5 IOL = 4 mA IOH = 4 mA 0.0 < VIN < 5.0 V CS high, and address 0, bit 0, low 1.2 TA = +25OC TA = +25 C 1.5 £ VDD £ 5.5 V, TA = +25 C
O O
Input / Output Input logic low Input logic high Output logic low Output logic high Input leakage Output tri-state leakage on I/O pin Oscillator Starting voltage Input capacitance on XI Output capacitance on XO Start-up time Frequency stability Frequency Measurement Mode Current source on I/O pin pulsed on/off @ 256 Hz
VIL VIH VOL VOH IIN ITS
1.0 0.4 2.4 0.1 0.1 1 1
V V V V mA mA
VSTA CIN COUT TSTA Df/f IONF
13 9 1 0.3 10 25
V pF pF s 0.5 60 ppm/V mA Table 3
CS high, addr.0, bit 0, high VI/O = 1 V
2
R
V3020
Electrical Characteristics (extended temperature range)
VDD = 5.0V ± 10%, VSS = 0 V and TA = - 40 to +125 OC, unless otherwise specified Parameter Total static supply Total static supply Dynamic current Symbol ISS ISS ISS Test Conditions all outputs open, all inputs at VDD VDD = 3.0 V, address 0 = 0 all outputs open, all inputs at VDD address 0 = 0 I/O to VSS through 1 MW RD = VSS, WR = VDD, CS = 4 MHz address 0 = 0, read all 0 Min. Typ. Max. 4 7 300 Units mA mA mA
CS high, addr.0, bit 0, high VI/O = 1 V 1) Analyses done at high temperature with crystal type Micro Crystal CX2V-02 IONF
Input / Output Input logic low Input logic high Output logic low Output logic high Input leakage Output tri-state leakage on I/O pin Oscillator Starting voltage Supply voltage dV/dt (power-up & power-down) Input capacitance on XI Output capacitance on XO Series resistance of the crystal Start-up time Frequency stability Frequency Measurement Mode Current source on I/O pin pulsed on/off @ 256 Hz
VIL VIH VOL VOH IIN ITS
1.0 3.5 IOL = 4 mA IOH = 4 mA 0.0 < VIN < 5.0 V CS high, and address 0, bit 0, low +85 °C £ TA £ +125 °C TA = +25 C TA = +25 OC -40 °C £ TA £ +85 °C 1) TA = +125 °C 2.0 £ VDD £ 5.5V , TA = +25 OC 8
O
0.4 2.4 0.1 0.1 1 1
V V V V mA mA
VSTA CIN COUT RS TSTA Df/f
1.2 0.006 13 9
6
V V/µs pF pF kW s ppm/V mA Table 3 ex
90 10 0.3 25 0.5 60
3
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