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Details, datasheet, quote on part number:V3021
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| Part: | V3021 |
| Category: | Timing Circuits => Clock Circuits |
| Description: | Ultra Low Power 1-Bit 32kHz Rtc, 0.8uA Standby Current, up to +125 C |
| Company: | EM Microelectronic |
| Datasheet: | Download V3021 datasheet File size : 150 kB |
| Request For quote: | Find where to buy V3021
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Datasheet text preview:
R
EM MICROELECTRONIC-MARIN SA
V3021
Ultra Low Power 1-Bit 32 kHz RTC
Features
n n n n n n n n n n n n n n n Supply current typically 800 nA at 3 V 50 ns access time with 50 pF load capacitance Fully operational from 2.0 V to 5.5 V No busy states or danger of a clock update while accessing Serial communication on one line of a standard parallel data bus or over a conventional 3 wire serial interface Interface compatible with both Intel and Motorola Seconds, minutes, hours, day of month, month, year, week day and week number in BCD format Leap year and week number correction Time set lock mode to prevent unauthorized setting of the current time or date Oscillator stability 0.3 ppm / volt No external capacitor needed Frequency measurement and test modes o Temperature range - 40 to +85 C On request extended temperature range, -40 to +125°C Packages DIP8 and SO8
Typical Operating Configuration
WR or R/W
RD or DS
CPU
Address Decoder
ADDRESS BUS
XI CS RD WR XO
DATA BUS
V3021
I/O
Description
The V3021 is a low power CMOS real time clock. Data is transmitted serially as 4 address bits and 8 data bits, over one line of a standard parallel data bus. The device is accessed by chip select (CS) with read and write control timing provided by either RD and WR pulse (Intel CPU) or DS with advanced R/W (Motorola CPU). Data can also be transmitted over a conventional 3 wire serial interface having CLK, data I/O and strobe. The V3021 has no busy states and there is no danger of a clock update while accessing. Supply current is typically 800 nA at VDD = 3.0 V. Battery operation is supported by complete functionality down to 2.0 V. The oscillator stability is typically 0.3 ppm/V. XI
CS RD WR
RAM
Fig. 1
Pin Assignment
DIP8 / SO8
Applications
n n n n n n n n n n Utility meters Battery operated and portable equipment Consumer electronics White/brown goods Pay phones Cash registers Personal computers Programmable controller systems Data loggers Automotive electronics
VDD
XO CS VSS
V3021
WR RD I/O
Fig. 2
1
R
V3021
Absolute Maximum Ratings
Parameter
Maximum voltage at VDD
Symbol Conditions
VSS + 7.0 V VSS - 0.3 V VDD + 0.3 V VSS - 0.3 V O +150 C O -65 C 1000 V 250 OC x 10 s Table 1
VDDmax VDDmin Minimum voltage at VDD Maximum voltage at any signal pin Vmax Minimum voltage at any signal pin Vmin Maximum storage temperature TSTOmax TSTOmin Minimum storage temperature Electrostatic discharge maximum VSmax to MIL-STD-883C method 3015 TSmax Maximum soldering conditions
be taken as for any other CMOS component. Unless otherwise specified, proper operation can only occur when all terminal voltages are kept within the supply voltage range. Unused inputs must always be tied to a defined logic voltage level.
Operating Conditions
Parameter Operating temperature Logic supply voltage Supply voltage dv/dt (power-up & power-down) Decoupling capacitor Crystal Characteristics 1) Frequency Load capacitance Series resistance
1)
Symbol Min. Typ. Max. Units TA VDD -40 2.0 +125 5.0 5.5 6 100 f CL RS 32.768 8.2 12.5 35 50
O
C V
Stresses above these listed maximum ratings may cause permanent damage to the device. Exposure beyond specified operating conditions may affect device reliability or cause malfunction.
V/ms nF kHz pF kW Table 2
7
Handling Procedures
This device has built-in protection against high static voltages or electric fields; however, it is advised that normal precautions
See Fig. 3
Electrical Characteristics (standard temperature range)
VDD = 5.0V ± 10%, VSS = 0 V and TA = - 40 to 85 OC, unless otherwise specified Parameter Total static supply Total static supply Symbol ISS ISS Test Conditions all outputs open, all inputs at VDD VDD = 3.0 V, address 0 = 0 all outputs open, all inputs at VDD, VDD = 5 V, address 0 = 0 TA = +25OC I/O to VSS through 1 MW RD = VSS, WR = VDD, CS = 4 MHz address 0 = 0, read all 0 Min. Typ. 0.8 1.3 Max. 1.8 10 3 300 Units mA mA mA mA
Dynamic current
ISS
Input / Output Input logic low Input logic high Output logic low Output logic high Input leakage Output tri-state leakage on I/O pin Oscillator Starting voltage Input capacitance on XI Output capacitance on XO Start-up time Frequency stability Frequency Measurement Mode Current source on I/O pin pulsed on/off @ 256 Hz
VIL VIH VOL VOH IIN ITS
1.0 3.5 IOL = 4 mA IOH = 4 mA 0.0 < VIN < 5.0 V CS high, and address 0, bit 0, low 0.4 2.4 0.1 0.1 1 1
V V V V mA mA
VSTA CIN COUT TSTA Df/f IONF
1.8 TA = +25 OC O TA = +25 C 2.0 £ VDD £ 5.5V , TA = +25 OC CS high, addr.0, bit 0, high VI/O = 1 V 10 13 9 1 0.3 25
0.5 60
V pF pF s ppm/V mA Table 3
2
R
V3021
Electrical Characteristics (extended temperature range)
VDD = 5.0V ± 10%, VSS = 0 V and TA = - 40 to 125 OC, unless otherwise specified Parameter Total static supply Total static supply Dynamic current Symbol ISS ISS ISS Test Conditions all outputs open, all inputs at VDD VDD = 3.0 V, address 0 = 0 all outputs open, all inputs at VDD address 0 = 0 I/O to VSS through 1 MW RD = VSS, WR = VDD, CS = 4 MHz address 0 = 0, read all 0 Min. Typ. Max. 4.9 8.3 300 Units mA mA mA
CS high, addr.0, bit 0, high VI/O = 1 V 1) Analyses done at high temperature with crystal type Micro Crystal CX2V-02 IONF
Input / Output Input logic low Input logic high Output logic low Output logic high Input leakage Output tri-state leakage on I/O pin Oscillator Starting voltage Supply voltage dV/dt (power-up & power-down) Input capacitance on XI Output capacitance on XO Series resistance of the crystal Start-up time Frequency stability Frequency Measurement Mode Current source on I/O pin pulsed on/off @ 256 Hz
VIL VIH VOL VOH IIN ITS
1.0 3.5 IOL = 4 mA IOH = 4 mA 0.0 < VIN < 5.0 V CS high, and address 0, bit 0, low +85 °C £ TA £ +125 °C TA = +25 C TA = +25 OC -40 °C £ TA £ +85 °C 1) TA = +125 °C 2.0 £ VDD £ 5.5V , TA = +25 OC 8
O
0.4 2.4 0.1 0.1 1 1
V V V V mA mA
VSTA CIN COUT RS TSTA Df/f
2.0 0.006 13 9
6
V V/µs pF pF kW s ppm/V mA Table 3 ex
90 10 0.3 25 0.5 60
3
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