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Details, datasheet, quote on part number:PTB20003
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| Part: | PTB20003 |
| Category: | Discrete => Transistors => Bipolar => RF => Power |
| Description: | 4 Watts, 915-960 MHZ Cellular Radio RF Power Transistor |
| Company: | Ericsson Microelectronics |
| Datasheet: | Download PTB20003 datasheet File size : 56 kB |
| Request For quote: | Find where to buy PTB20003
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Datasheet text preview:
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PTB 20003 4 Watts, 915960 MHz Cellular Radio RF Power Transistor
Description
The 20003 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 4 Watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
Specified 25 Volts 4 Watts, 915960 MHz Class AB Characteristics 50% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride Passivated
Typical Output Power vs. Input Power
12 10 8 6 4 2 0 0.00
Output Power (Watts)
200 03
LOT COD E
VCC = 25 V ICQ = 50 mA f = 960 MHz
0. 15 0. 30 0. 45 0.60 0.75
Input Power (Watts)
Package 20201
Maximum Ratings
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tf lange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tf lange = 70°C) TS T G RJC
Symbol
VCER VCBO V EBO IC PD
Value
40 50 4.0 1.7 35 0.2 40 to +150 5.0
Unit
Vdc Vdc Vdc Adc Watts W/°C °C °C/W
1 9/28/98
PTB 20003
Electrical Characteristics
Characteristic
Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested)
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Conditions
IB = 0 A, IC = 50 mA VBE = 0 V, IC = 50 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA
Symbol
V(BR)CEO V(BR)CES V(BR)EBO hFE
Min
25 55 4 20
Typ
30 70 5 50
Max
-- -- -- 120
Units
Volts Volts Volts --
RF Specifications (100% Tested)
Characteristic
Gain (VCC = 25 Vdc, Pout = 4 W, ICQ = 50 mA, f = 960 MHz) Collector Efficiency (VCC = 25 Vdc, Pout = 4 W, ICQ = 50 mA, f = 960 MHz) Intermodulation Distortion (VCC = 25 Vdc, Pout = 4 W(PEP), ICQ = 50 mA, f1 = 959.999 MHz, f2 = 960.000 MHz) Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 4 W, ICQ = 50 mA, f = 960 MHz--all phase angles at frequency of test)
Symbol
Gpe C IMD
Min
11 50 --
Typ
13 -- -28
Max
-- -- --
Units
dB % dBc
--
--
30:1
--
Impedance Data
(data shown for fixed-tuned broadband circuit)
(VCC = 25 Vdc, Pout = 4 W, ICQ = 50 mA)
Z Source
Z Load
Frequency
MHz 915 935 960 R 6.7 6.8 6.8
Z Source
jX -1.8 -1.3 -0.7 R 6.8 6.9 7.0
Z Load
jX 15.5 16.0 17.0
2
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Typical Performance
Gain & Efficiency vs. Frequency (as measured in a broadband circuit)
15 14 Gain (dB) 80 70 60 Effic ienc y (%) 50 40 30 20 975
PTB 20003
13 12 11 10 9 900
VCC = 25 V Pout = 4 W
915
930
945
960
Fre que ncy (MHz)
Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434
1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower
Specifications subject to change without notice. LF © Ericsson Components AB 1994 EUS/KR 1301-PTB 20003 Uen Rev. D 09-28-98
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Efficiency (%)
Gain (dB)
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