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Details, datasheet, quote on part number:PTB20004
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| Part: | PTB20004 |
| Category: | Discrete => Transistors => Bipolar => RF => Power |
| Description: | 50 Watts, 860-900 MHZ Cellular Radio RF Power Transistor |
| Company: | Ericsson Microelectronics |
| Datasheet: | Download PTB20004 datasheet File size : 48 kB |
| Request For quote: | Find where to buy PTB20004
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Datasheet text preview:
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PTB 20004 50 Watts, 860900 MHz Cellular Radio RF Power Transistor
Description
The 20004 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 50 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
50 Watts, 860900 MHz Class AB Characteristics 50% Collector Efficiency at 50 Watts Gold Metallization Silicon Nitride Passivated
Typical Output Power vs. Input Power
60
Output Power (Watts)
50 40 30 20 10 0 0 2 4 6 8 10
200 04
LOT CO DE
VCC = 25 V ICQ = 200 mA f = 900 MHz
Input Power (Watts)
Package 20200
Maximum Ratings
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tf lange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tf lange = 70°C) TS T G RJC
Symbol
VCER VCBO V EBO IC PD
Value
40 50 4.0 10.0 175 1.0 40 to +150 1.0
Unit
Vdc Vdc Vdc Adc Watts W/°C °C °C/W
1 9/28/98
PTB 20004
Electrical Characteristics
Characteristic
Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested)
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Conditions
IB = 0 A, IC = 100 mA VBE = 0 V, IC = 100 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A
Symbol
V(BR)CEO V(BR)CES V(BR)EBO hFE
Min
25 55 3.5 20
Typ
30 70 5 50
Max
-- -- -- 100
Units
Volts Volts Volts --
RF Specifications (100% Tested)
Characteristic
Gain (VCC = 25 Vdc, Pout = 50 W, ICQ = 200 mA, f = 900 MHz) Collector Efficiency (VCC = 25 Vdc, Pout = 50 W, ICQ = 200 mA, f = 900 MHz) Intermodulation Distortion (VCC = 25 Vdc, Pout = 50 W(PEP), ICQ = 200 mA, f1 = 899 MHz, f2 = 900 MHz) Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 50 W, ICQ = 200 mA f = 900 MHz--all phase angles at frequency of test)
Symbol
Gpe C IMD
Min
8.0 50 --
Typ
9.5 -- -21
Max
-- -- --
Units
dB % dBc
--
--
10:1
--
Impedance Data
(data shown for fixed-tuned broadband circuit)
(VCC = 25 Vdc, Pout = 50 W, ICQ = 200 mA)
Z Source
Z Load
Frequency
MHz 860 880 900 R 7.1 6.9 6.7
Z Source
jX -1.7 -1.2 -0.6 R 5.0 5.1 5.2
Z Load
jX -3.5 -3.9 -4.5
2
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Typical Performance
Gain & Efficiency vs. Frequency
12 11
PTB 20004
(as measured in a broadband circuit)
Gain (dB)
80 70 60
10 9 8 7 6 840 Effic ienc y (%)
50
VCC = 25 V ICQ = 200 mA Pout = 50 W
855 870 885 900
40 30 20 915
Fre que ncy (MHz)
Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434
1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower
Specifications subject to change without notice. LF © Ericsson Components AB 1994 EUS/KR 1301-PTB 20004 Uen Rev. D 09-28-98
3
Efficiency (%)
Gain (dB)
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