|
|
Part: PTB20006
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
-> Power
Description: 4 Watts, 860-900 MHZ Cellular Radio RF Power Transistor
Company: Ericsson Microelectronics
Datasheet: Download PTB20006 datasheet File size : 181 kB
Request For quote: Find where to buy PTB20006
Datasheet text preview:
e
PTB 20006 4 Watts, 860900 MHz Cellular Radio RF Power Transistor
Description
The 20006 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 4 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
4 Watts, 860900 MHz Class AB Characteristics 50% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride Passivated
Typical Output Power vs. Input Power
12
Output Power (Watts)
10 8 6 4 2 0 0.00
200 06
LOT COD E
VCC = 25 V ICQ = 50 A f = 900 MHz
0. 15 0. 30 0. 45 0.60 0.75
Input Power (Watts)
Package 20201
Maximum Ratings
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tf lange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tf lange = 70°C) TSTG RJC
Symbol
VCER VCBO V EBO IC PD
Value
40 50 4.0 1.7 35 0.2 40 to +150 5.0
Unit
Vdc Vdc Vdc Adc Watts W/°C °C °C/W
1 9/28/98
PTB 20006
Electrical Characteristics
Characteristic
Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested)
e
Conditions
IB = 0 A, IC = 50 mA VBE = 0 V, IC = 50 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA
Symbol
V(BR)CEO V(BR)CES V(BR)EBO hFE
Min
25 55 3.5 20
Typ
30 70 5 50
Max
-- -- -- 120
Units
Volts Volts Volts --
RF Specifications (100% Tested)
Characteristic
Gain (VCC = 25 Vdc, POUT = 4 W, ICQ = 50 mA, f = 860 MHz) Collector Efficiency (VCC = 25 Vdc, POUT = 4 W, ICQ = 50 mA, f = 860 MHz) Intermodulation Distortion (VCC = 25 Vdc, POUT = 4 W(PEP), ICQ = 50 mA, f1 = 860MHz, f2 = 861 MHz) Load Mismatch Tolerance (VCC = 25 Vdc, POUT = 4 W, ICQ = 50 mA, f = 860 MHz --all phase angles at frequency of test)
Symbol
Gpe C IMD
Min
11.0 45 --
Typ
13.0 -- -25
Max
-- -- --
Units
dB % dBc
--
--
30:1
--
Impedance Data
(data shown for fixed-tuned broadband circuit)
(VCC = 25 Vdc, POUT = 4 W, ICQ = 50 mA)
Z Source
Z Load
Frequency
MHz 860 880 900 R 5.3 5.0 4.9
Z Source
jX -5.5 -5.0 -4.4 R 2.4 2.3 2.1
Z Load
jX 11.0 11.6 12.0
2 10/28/98
e
Typical Performance
Gain & Efficiency vs. Frequency
15 14
PTB 20006
(as measured in a broadband circuit)
80 70 60 50
Effic ienc y (%)
Gain (dB)
13 12 Gain (dB) 11 10 9 840
VCC = 25 V ICQ = 50 mA Pout = 4 W
855 870 885 900
40 30 20 915
Fre que ncy (MHz)
Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434
1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower
Specifications subject to change without notice. LF © Ericsson Components AB 1994 EUS/KR 1301-PTB 20006 Uen Rev. D 10-28-98
3
Efficiency (%)
Others parts begin by pt
PT-1 PT-2 PT-3 PT-4 PT-5 PT-6 PT-7 PT-8 PT-9 PT-10 PT-11 PT-12 PT-13 PT-14 PT-15 PT-16 PT-17 PT-18 PT-19 PT-20 PT-21 PT-22 PT-23 PT-24 PT-25 PT-26 PT-27 PT-28 PT-29 PT-30 PT-31 PT-32
|
|
|
