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Part: PTF10007
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
Description: 35 Watts, 1.0 GHZ Goldmos Field Effect Transistor
Company: Ericsson Microelectronics
Datasheet: Download PTF10007 datasheet File size : 66 kB
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Datasheet text preview:
PTF 10007 35 Watts, 1.0 GHz GOLDMOS ® Field Effect Transistor
Description
The PTF 10007 is a 35 Watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency a n d 13.5 dB of gain. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. · Performance at 960 MHz, 28 Volts - Output Power = 35 Watts - Power Gain = 13.5 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source 100% lot traceability Available in Package 20235 as PTF 10052
· · · · ·
Typi ca l Output Power & Efficiency vs. Input Power
50 Output Pow er (W) 40 80 Ef f ic ienc y (%) 60 40 20 0 0 1 2 3 100
1 A - 1 2000 3456 7 9723
Efficiency
Package 20222
Output Power
30 20 10 0
VD D = 28 V ID Q = 300 m A f = 960 MHz
Package 20235
A-1 234 569 999
100 52
Input Power (Watts)
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Tf lange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tf lange = 70°C) TS T G RqJC
Symbol
VDSS VGS TJ PD
Value
60 ± 20 200 120 0.7 40 to +150 1.4
Unit
Vdc Vdc °C Watts W/°C °C °C/W
e
1
PTF 10007
Electrical Characteristics (100% Tested)
Characteristic
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance
e
Conditions
VGS = 0 V, ID = 5 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A
Symbol
V(BR)DSS ID S S VGS(th) gf s
Min
65 -- 3.0 --
Typ
70 -- -- 2.8
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 300 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz-- all phase angles at frequency of test)
Symbol
Gp s P-1dB h Y
Min
12.0 35 50 --
Typ
13.5 -- 55 --
Max
-- -- -- 10:1
Units
dB Watts % --
Typical Performance
POUT, Gain & Efficiency (at P-1dB) vs. Frequency
Output Power & Efficiency
30 25 20 70
Broa dba nd Test Fixture Performance
20
Ef f ic ienc y (%)
Ef f ic ienc y (%)
60 50
16
50
Gain (dB)
Gain
Gain
VDD = 28 V IDQ = 300 mA POUT = 35 W
Return Loss (dB)
40
-30 5 -20 15 -10 25
15 10 5 0 400
12
VDD = 28 V IDQ = 300 mA
500 600
Output Pow er (W)
30 20 1000
8
700
800
900
4 925
930
935
940
945
950
955
0 -35 960
Frequency (MHz)
Frequency (MHz)
2
Return Loss
G a i n (d B )
40
Efficiency
60
e
Typical Performance
Pow e r Gain vs. Output Power
17 16 15 14 13 12 11 0.1 1.0 10.0 100.0
- 10 - 20
PTF 10007
Inte rm odula ti on Distortion vs. Output Power
VD D = 28 V IDQ = 300 m A f1 = 960.000 MHz f2 = 960.100 MHz
3r d
Power Gain (dB)
ID Q = 300 mA
IMD (dBc)
- 30 - 40 - 50 - 60 0
IDQ = 150 mA IDQ = 75 mA
VDD = 28 V f = 960 MHz
5th 7th
10
20
30
40
50
Output Power (Watts)
Output Power (Watts-PEP)
Output Power vs. Supply Voltage
45
Ca pa cita nce vs. Supply Voltage
120 40 100 80 60 40 20 0
Output Power (Watts)
Cds and Cgs (pF)
25 20
35
Cds Crss
0 10 20 30 40
15 10 5 0
30 22 24 26 28 30 32 34
Supply Voltage (Volts)
Supply Voltage (Volts)
Bia s Voltage vs. Temperature
1.0 3 1.0 2 Voltage normalized to 1.0 V Series show current (A)
0.3 0.87 1.44 2.01 2.58 3.15
Bias Voltage (V)
1.0 1 1.0 0 0.9 9 0.9 8 0.9 7 0.9 6 0.9 5 -2 0
30 Te m p. (°C)
80
130
3
Crss (pF)
40
IDQ = 300 mA POUT = 5 W f = 960 MHz
VGS =0 V f = 1 MHz
35 30
Cgs
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