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Details, datasheet, quote on part number:PTF10009
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| Part: | PTF10009 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => DMOS (Double-diffused MOS) => RF Specific |
| Description: | 85 Watts, 1.0 GHZ Goldmos Field Effect Transistor |
| Company: | Ericsson Microelectronics |
| Datasheet: | Download PTF10009 datasheet File size : 234 kB |
| Request For quote: | Find where to buy PTF10009
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Datasheet text preview:
PTF 10009 85 Watts, 1.0 GHz GOLDMOSTM Field Effect Transistor
Description
The PTF 10009 is an 85 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 50% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization are used to ensure excellent device lifetime and reliability. · Performance at 960 MHz, 28 Volts - Output Power = 85 Watts - Power Gain = 13.0 dB Typ - Efficiency = 50% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% lot traceability
· · · ·
Typical Output Power and Efficiency vs. Input Power
100 90 Output Power (W) 80 70 60 50 40 30 20 10 0 0.0 1.0 2.0 3.0 4.0 5.0 Effic ienc y (%) 80 72 64 56 48 40 32 24 16 8 0
Output Power
Efficiency
1234
1000
5697
44
9
VDS = 28 V IDQ = 600 mA Total f = 960 MHz
Input Power (Watts)
Package 20230
Maximum Ratings
Parameter
Drain-Source Voltage (1) Gate-Source Voltage (1) Operating Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C)
(1)per side
Symbol
VDSS V GS TJ PD TSTG RqJC
Value
65 ± 20 200 270 1.54 -65 to 150 0.65
Unit
Vdc Vdc °C Watts W/°C °C °C/W
All published data at TCASE = 25°C unless otherwise indicated.
e
1
PTF 10009
Electrical Characteristics
Characteristic (per side) Conditions Symbol
V(BR)DSS IDSS VGS(th) gfs
e
(100% Tested--characteristics, conditions and limits shown per side)
Min
65 -- 3.0 --
Typ
-- -- -- 2.8
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A
Dynamic Characteristics
Characteristic (per side)
Input Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Output Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Reverse Transfer Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz)
Symbol
Ciss C oss Crss
Min
-- -- --
Typ
90 36 1.9
Max
-- -- --
Units
pF pF pF
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 28 V, Pout = 85 W, IDQ = 600 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, Pout = 85 W, IDQ = 600 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, Pout = 85 W, IDQ = 600 mA, f = 960 MHz-- all phase angles at frequency of test)
Symbol
Gps h Y
Min
12.0 47 --
Typ
13.0 50 --
Max
-- -- 5:1
Units
dB % --
Impedance Data
(data shown for fixed-tuned broadband circuit)
(VDD = 28 V, Pout = 85 W, IDQ = 600 mA)
Z Source
D
Z Load
G G
S
D
Frequency
MHz 860 900 960 1000 R
Z Source W
jX -0.78 -0.05 0.69 1.35 R 1.76 1.80 1.58 1.39
Z Load W
jX -1.50 -0.78 0.36 1.41 2 5.00 4.80 4.24 3.95 Z0 = 50 W
e
Typical Performance
Gain vs. Power Output
20.0 17.5 15.0
PTF 10009
Intermodulation Distortion vs. Output Power
-10
VDS = 28V
-20
IDQ = 600 mA Total f1 = 960.0 MHz f2 = 960.1 MHz
3rd Order
Gain (dB)
IMD (dBc)
-30 -40
12.5 10.0 7.5 5.0 0 20 40 60 80 100
5th
VDS = 28 V IDQ = 600mA Total f = 960 MHz
7th -50
-60 0 20 40 60 80 100
Output Power (Watts)
Output Power (Watts-PEP)
Output Power vs. Drain-Source Voltage
100
Gain vs. Frequency
(as measured in a broadband circuit)
14
Output Power (Watts)
95 90 13
Gain (dB)
85 80 75 70 65 22 24 26 28 30 32 34
12
VDS = 28 V
11
IDQ = 600 mA Total f = 960 MHz
IDQ = 600 mA Total Pout = 85 W
910 920 930 940 950 960
10 900
Drain-Source Voltage (Volts)
Fre que ncy (MHz)
Bias Voltage vs. Temperature
1.03 1.02 Bias Voltage (V) 1.01 1.00
0. 43
Voltage normalized to 1.0 V Series show current (A)
0.99 0.98 0.97 0.96 0.95 -20 30 80 T e mp. (°C)
1. 25 2. 08 2. 9 3. 71 4. 53
130
3
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