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Part: PTF10015
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> DMOS (Double-diffused MOS)
-> RF Specific
Description: 50 Watts, 300-960 MHZ Goldmos Field Effect Transistor
Company: Ericsson Microelectronics
Datasheet: Download PTF10015 datasheet File size : 66 kB
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Datasheet text preview:
PTF 10015 50 Watts, 300960 MHz GOLDMOSTM Field Effect Transistor
Description
The PTF 10015 is a 50 Watt LDMOS FET intended for large signal amplifier applications from 300 to 960 MHz. It operates at 55% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization are used to ensure excellent device lifetime and reliability.
Features
· Performance at 960 MHz, 28 Volts - Output Power = 50 Watts - Power Gain = 13.0 dB Typ, 12.0 dB Min - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability Back Side Common Source 100% lot traceability Available in Package 20222 as PTF 10031
· · · · · ·
Typica l Power Out & Efficiency vs. Power In
70 60 90 80 70 Ef f ic ienc y (%) 40 30 20 10 0 0 1 2 3 4 60 50
A-1 234 569 914
50
VDD = 28 V IDQ = 380 mA f = 960 MHz
40 30 20
Drain Efficiency
Output Power
Output Pow er (W)
100 15
Package 20235
A-12
1003 1
3456 9743
Package 20222
Input Power (Watts)
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TC = 70°C) All published data is at TC = 25°C unless otherwise indicated. TS T G RqJC
Symbol
VDSS VGS TJ PD
Value
65 ± 20 200 175 1.0 -65 to +150 1.0
Unit
Vdc Vdc °C Watts W/°C °C °C/W
e
1
PTF 10015
Electrical Characteristics
Characteristic
(100% Tested)
e
Conditions Symbol
V(BR)DSS IDSS VGS(th) gfs
Min
65 -- 3.0 2.0
Typ
-- -- -- 2.8
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A
RF Specifications (100% Tested)
Characteristic
Common Source Power Gain (VDD = 28 V, POUT = 50 W, IDQ = 380 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 380 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 50 W, IDQ = 380 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 50 W, IDQ = 380 mA, f = 960 MHz-- all phase angles at frequency of test)
Symbol
Gps P-1dB h Y
Min
12.0 50 50 --
Typ
13.0 -- 55 --
Max
-- -- -- 10:1
Units
dB Watts % --
Typical Performance
Ga in vs. Power Output
16 15
-25
Intermodulation Distortion vs. Power Output
-15
VDD = 28 V IDQ = 380 mA f1 = 950.000 MHz f2 = 950.100 MHz
5th -45 7th 3rd
Gain (dB)
13 12 11 10 0 10 20 30 40 50 60 70
IMD (dB)
14
-35
VDD = 28 V IDQ = 380 mA f = 960 MHz
-55 0 10 20 30 40 50 60 70
Pow er Output (Watts)
Output Power (Watts PEP)
2
e
Output Power vs. Supply Voltage
60
PTF 10015
Broa dba nd Gain vs. Frequency
15
Output Power (Watts)
55
14
Gain (dB)
50
13
VDD = 28 V
12
45
IDQ = 380 mA f = 960 MHz
IDQ = 380 mA POUT = 50 W
930 935 940 945 950 955 960
40 22 24 26 28 30 32 34
11 925
Dra in-Source Voltage (Volts)
Frequenc y (MHz)
Ca pa ci ta nce vs. Supply Voltage
160 140 18
Bia s Voltage vs. Temperature
1.0 3 1.0 2 Bias Voltage (V) 1.0 1 1.0 0 0.9 9 0.9 8 0.9 7 0.9 6 0.9 5 -20 30 Te m p. (°C) 80 130
0.43 1.25 2.08 2.9 3.71 4.53
Cds & Cgs (pF)
120 100 80 60 40 20 0 0 10
Cgs
VGS = 0 V f = 1 MHz
16 14 12 10
Voltage normalized to 1.0 V Series show current (A)
Cds Crs s
20 30 40
8 6 4 2
Supply Voltage (Volts)
Impedance Data (circuit optimized at 960 MHz)
VDD = 28 V, POUT = 50 W, IDQ = 380 mA
D
Crss (pF)
Z0 = 50 W
Z Source
Z Load
G S
Frequency
MHz 850 900 950 1000 R
Z Source W
jX -1.22 -0.44 +0.67 +1.30 R 1.38 1.20 1.08 0.96
Z Load W
jX 1.00 1.65 2.33 2.90 3 2.50 2.45 2.40 2.40
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