|
Details, datasheet, quote on part number:PTF10019
| |
| Part: | PTF10019 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => DMOS (Double-diffused MOS) => RF Specific |
| Description: | 70 Watts, 860-960 MHZ Goldmos Field Effect Transistor |
| Company: | Ericsson Microelectronics |
| Datasheet: | Download PTF10019 datasheet File size : 330 kB |
| Request For quote: | Find where to buy PTF10019
|
| |
Datasheet text preview:
PTF 10019 70 Watts, 860960 MHz GOLDMOSTM Field Effect Transistor
Description
The PTF 10019 is an internally matched, 70 Watt LDMOS FET intended for cellular, GSM, and D-AMPS applications in the 860 to 960 MHz range. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. · ·
· · · ·
INTERNALLY MATCHED Performance at 960 MHz, 28 Volts - Output Power = 70 Watts - Power Gain = 14.5 dB Typ - Efficiency = 50% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability
Typical Output Power vs. Input Power
80 74 Out put Power 60 Effic ienc y 40 66
Output Power (Watts)
50 42
Efficiency (%)
58
A-1
100 2 3 4 19 568
VDD = 28 V
20
34 26 18 10 4. 0
955
IDQ = 600 mA f = 960 MHz
0. 0 1. 0 2. 0 3. 0
0
Input Power (Watts)
Package 20237
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 28 V, Pout = 70 W, IDQ = 600 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 600 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, Pout = 70 W, IDQ = 600 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, Pout = 70 W, IDQ = 600 mA, f = 960 MHz --all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol
Gp e P-1dB h Y
Min
13.0 70 45 --
Typ
14.5 75 50 --
Max
-- -- -- 10:1
Units
dB Watts % --
e
1
PTF 10019
Electrical Characteristics (100% Tested)
Characteristic
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance
e
Conditions
VGS = 0 V, ID = 25 mA VDS = 26 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A
Symbol
V( B R ) D S S ID S S VGS(th) gf s
Min
65 -- 3.0 --
Typ
-- -- -- 3.0
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) TSTG RqJC
Symbol
VD S S VGS TJ PD
Value
65 ± 20 200 215 1.25 40 to +150 0.8
Unit
Vdc Vdc °C Watts W/°C °C °C/W
Typical Performance
Typical POUT, Gain, and Efficiency (at P-1 dB) vs. Frequency
Output Power and Efficiency
16 90 Out put Power (W) 15 80
Broadband Test Fixture Performance
16 Gain (dB) 14 12 60 50 Effic ienc y (%) 40 - 30 5 -15 20 -25 10 960 70
Power Gain @ P-1dB
Gain
14
8 6 4 900
13 Effic ienc y (%) 12 800
60
VDD = 28 V, IDQ = 600 mA, POUT = 70 W
Return Loss (dB) 915 930 945
850
900
950
50 1000
Fre que ncy (MHz)
Fre que ncy (MHz)
2
Return Loss
Power Gain (dB)
70
10
Efficienc y
e
Power Gain vs. Output Power
18 90
PTF 10019
Output Power (at P-1dB) vs. Supply Voltage
Output Power (Watts)
85 80 75 70 65 60 55
17 16
IDQ = 600 mA IDQ = 300 mA
Gain (dB)
15 14 13 12 11 10 0.1
IDQ = 150 mA
1. 0 10. 0 100.0
f = 960 MHz IDQ = 600 mA
23
25
27
29
31
33
Output Power (Watts)
Drain-Source Voltage (Volts)
Intermodulation Distortion vs. Output Power
-10
200
Capacitance vs. Voltage *
VGS = 0 V f = 1 MHz
20 18 16 14 12 10 8 6 4 2 0 40
VDD = 28 V
-20
180
IDQ = 600 mA f1 = 959.900 MHz f2 = 960.000 MHz
3rd Order
Cds and Cgs (pF)
160 140 120 100 80 60 40 20 0 0 10 20
IMD (dBc)
-30 -40
5th 7th
Cds Crs s
30
-50 -60 0 10 20 30 40 50 60 70 80
Output Power (Watts-PEP)
Supply Voltage (Volts)
* This part is internally matched. Measurements of the finished product will not yield these figures.
Bias Voltage vs. Temperature
1.04 1.02
0. 40
Voltage normalized to 1.0 V Series show current (A)
Bias Voltage (V)
1.00 0.98 0.96 0.94 -20 30 T e mp. (°C) 80
1. 32 2. 25 3. 17 4. 09 5. 02
130
3
Crss (pF)
Cgs
|
|
