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Part: PTF10020
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
Description: 125 Watts, 860-960 MHZ Goldmos Field Effect Transistor
Company: Ericsson Microelectronics
Datasheet: Download PTF10020 datasheet File size : 66 kB
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Datasheet text preview:
PTF 10020 125 Watts, 860960 MHz GOLDMOSTM Field Effect Transistor
Description
The PTF 10020 is an internally matched, 125 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. · ·
· · · ·
INTERNALLY MATCHED Performance at 960 MHz, 28 Volts - Output Power = 125 Watts - Power Gain = 12.5 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source 100% Lot Traceability
Typical Output Power vs. Input Power
150 960 MHz
Output Power (Watts)
125 100 75 860 MHz 50 900 MHz
A-1
100 20
234 569 813
VDD = 28 V
25 0 0 1 2 3 4 5 6 7
IDQ = 1.4 A Total
Input Power (Watts)
Package 20240
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 28 V, POUT = 125 W, IDQ = 1.4 A Total, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, ICQ = 1.4 A Total, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 125 W, IDQ = 1.4 A Total, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 125 W(PEP), IDQ = 1.4 A Total, f = 959.9, 960 MHz--all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated. P-1dB h Y 125 50 -- 130 55 -- -- -- 10:1 Watts % --
Symbol
Gp s
Min
11.0
Typ
12.5
Max
--
Units
dB
e
1
PTF 10020
Electrical Characteristics
Characteristic Conditions Symbol
V(BR)DSS IDSS VGS(th) gfs
e
(100% Tested--characteristics, conditions and limits shown per side)
Min
65 -- 3.0 --
Typ
-- -- 4.3 2.5
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
Drain-Source Breakdown Voltage VGS = 0 V, ID = 5 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A
Maximum Ratings
Parameter
Drain-Source Voltage (1) Gate-Source Voltage (1) Operating Junction Temperature Total Device Dissipation at Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C)
(1)per side
Symbol
VDSS VGS TJ PD TSTG RqJC
Value
65 ±20 200 290 1.67 40 to +150 0.6
Unit
Vdc Vdc °C Watts W/°C °C °C/W
Typical Performance
Broadband Test Fixture Performance
20 Effic ienc y % 16 60 50 40
Efficienc y
Broadband Test Fixture Performance
20 18 16 Effic ienc y % 60 50 40 - 35 0 -15 20 -25 10 -35 0 930 935 940 945 950 955 960
Gain (dB)
Gain 12
Gain (dB)
14 12 10 8 6 4 925 Gain
Return Loss (dB)
- 35 0 -15 20 -25 10 Ret urn Loss
IDQ = 1.4 A Total
8
IDQ = 1.4 A Total POUT = 125 W
Return Loss
POUT = 125 W
4 860
-35 0 870 880 890 900
Fre que ncy (MHz)
Fre que ncy (MHz)
2
Return Loss (dB)
VDD = 28 V
VDD = 28 V
Efficienc y
e
Typical Performance
Typical POUT , Gain & Efficiency (at P-1dB) vs. Frequency
Output Power & Efficiency
15 14 O ut put Power (W ) 150 130 110
PTF 10020
Efficiency vs. Output Power
80 70
Efficiency (%)
60 50 40 30 20 10 0 30 50 70 90 110 130
Gain
13 12 11 10 86 0
G ain (dB)
VDD = 28 V IDQ = 1.4 A Total
E ffic ienc y (%) 90 70
VDD = 28 V IDQ = 1.4 A Total f = 960 MHz
880
900
9 20
940
50 960
Fr e qu e ncy (MHz)
Output Power (Watts)
Output Power vs. Supply Voltage
150
Intermodulation Distortion vs. Output Power
-10
VDD = 28 V Output Power (Watts)
130 110 90 70 50 20 22 24 26 28 30 32 34 -20
IDQ = 1.4 A Total f1 = 941.9 MHz f2 = 942.0 MHz
3rd order
IDQ = 1.4 A Total f = 960 MHz Pin = 5.4 W
IMD (dBc)
-30 -40
5t h -50 7t h -60 20 30 40 50 60 70 80 90 100 110 120
VDS, Supply Voltage
Output Power (Watts-PEP)
Power Gain vs. Output Power
15
180 160
Capacitance vs. Voltage (one side)*
VGS = 0 V f = 1 MHz
27 24 21 18 15
Cds and Cgs (pF)
14
120 100 80 60 40 20
Gain (dB)
13
IDQ = 700 mA IDQ = 350 mA
Cds Crss
0 10 20 30 40
12 9 6 3 0
12
11 1 10 100 1000
0
Output Power (W)
Supply Voltage (Volts) *This part is internally matched. Measurements of the finished product will not yield these figures. 3
Crss (pF)
IDQ = 1.4 A
VDD = 28 V f = 960 MHz
140
Cgs
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