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Part: PTF10021
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
Description: 30 Watts, 1.4-1.6 GHZ Goldmos Field Effect Transistor
Company: Ericsson Microelectronics
Datasheet: Download PTF10021 datasheet File size : 66 kB
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Datasheet text preview:
PTF 10021 30 Watts, 1.41.6 GHz GOLDMOSTM Field Effect Transistor
Description
The PTF 10021 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. It is rated at 30 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. · ·
· · · ·
INTERNALLY MATCHED Performance at 1.5 GHz, 28 Volts - Output Power = 30 Watts Min - Power Gain = 13 dB Typ - Efficiency = 48% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability
Typical Output Power vs. Input Power
40
Output Power (Watts)
30
20
100 21
A-1 234 569 813
VDD = 28 V
10
IDQ = 360 mA f = 1.5 GHz
0 1 2 3 4 5
0
Input Power (Watts)
Package 20237
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 28 V, POUT = 10 W, IDQ = 360 mA, f = 1.5 GHz) Power Output at 1 dB Compressed (VDD = 28 V, POUT = 30 W, IDQ = 360 mA, f = 1.5 GHz) Drain Efficiency (VDD = 28 V, POUT = 30 W, IDQ = 360 mA, f = 1.5 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 30 W(PEP), IDQ = 360 mA, f = 1.5 GHz-- all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol
Gps P-1dB h Y
Min
11.0 30 45 --
Typ
13.0 -- 48 --
Max
-- -- -- 10:1
Units
dB Watts % --
e
1
PTF 10021
Electrical Characteristics
Characteristic
(100% Tested)
e
Conditions Symbol
V(BR)DSS I DSS VGS(th) g fs
Min
65 -- 3.0 --
Typ
-- -- -- 2.2
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) TSTG RqJC
Symbol
VDSS VGS TJ PD
Value
65 ± 20 200 105 0.6 40 to +150 1.65
Unit
Vdc Vdc °C Watts W/°C °C °C/W
Typical Performance
Efficiency (%) Return Loss (dB)
Output Power & Efficiency
15 14
Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency
Effic ienc y (%) Out put Power (W)
Broadband Test Fixture Performance
60 50 40 30 14 12 Gain (dB) 60 50 Effic ienc y (%) 40 - 35 0 Return Loss (dB) -15 20 -25 10 -35 0 1600
Gain (dB)
Gain
13 12 11 Gain (dB)
10 8 6 4 1400
VDD = 28 V IDQ = 360 mA POUT = 10 W
VDD = 28 V IDQ = 360 mA
20 10 1700
10 1300
1400
1500
1600
Fre que ncy (MHz)
1450
1500
1550
Fre que ncy (MHz)
2
e
Output Power vs. Supply Voltage
40 16 15
PTF 10021
Power Gain vs. Output Power
VDD = 28 V f = 1.5 GHz
Output Power (Watts)
Power Gain (dB)
35
14 13 12 11 10
IDQ = 360 mA IDQ = 180 mA IDQ = 90 mA
30
IDQ = 360 mA f = 1.5 GHz
25 22 24 26 28 30 32 34
9 0.1 1.0 10.0 100. 0
Supply Voltage (Volts)
Output Power (Watts)
Intermodulation Distortion vs. Output Power
-10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 0
Capacitance vs. Supply Voltage *
120 10 100 80 60 40 20 0
VDD = 28 V Cds and Cgs (pF) IDQ = 360 mA f1 = 1.499 GHz f2 = 1.500 GHz
5th 3rd Order
VGS =0 V f = 1 MHz
8 6 4 2 0
IMD (dBc)
Cds
Cgs
7th
Crss
0 10 20 30 40
5
10
15
20
25
30
35
40
Output Power (Watts-PEP)
Supply Voltage (Volts)
Bias Voltage vs. Temperature
1.03 1.02 Bias Voltage (V) 1.01 1.00 0.99 0.98 0.97 0.96 -20 30 T e mp. (°C) 80 130
0.3 0.87 1.44 2.01 2.58 3.15
Voltage normalized to 1.0 V Series show current (A)
*This part is internally matched. Measurements of the finished product will not yield these figures. 3
Crss (pF)
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