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Part: PTF10031
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
Description: 50 Watts, 1.0 GHZ Goldmos Field Effect Transistor
Company: Ericsson Microelectronics
Datasheet: Download PTF10031 datasheet File size : 66 kB
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Datasheet text preview:
PTF 10031 50 Watts, 1.0 GHz GOLDMOSTM Field Effect Transistor
Description
The PTF 10031 is a 50 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. · Performance at 960 MHz, 28 Volts - Output Power = 50 Watts - Power Gain = 13.0 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability Back Side Common Source Available in Package 20235 as PTF 10015 100% Lot Traceability
· · · · · ·
Typical Power Out & Efficiency vs. Power In
70 60 90 80 Out put Power (W) E ffic ienc y (%) 70 60 50
Output Power
50 40 30 20 10 0 0
A-12
1003 1
3456 9744
Package 20222
VDD = 28 V IDQ = 350 mA f = 960 MHz
1 2 3 4
40 30 20
Efficiency
Package 20235
A-1
100 15
234 561 970
Input Power (Watts)
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation TCASE = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) All published data at TCASE = 25°C unless otherwise indicated. TSTG RqJC
Symbol
VD S S VGS TJ PD
Value
65 ± 20 200 175 1.0 -65 to 150 1.0
Unit
Vdc Vdc °C Watts W/°C °C °C/W
e
1
PTF 10031
Electrical Characteristics (100% Tested)
Characteristic
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance
e
Conditions
VGS = 0 V, ID = 25 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A
Symbol
V( B R ) D S S ID S S VGS(th) gf s
Min
65 -- 3.0 --
Typ
-- -- -- 2.8
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
RF Specifications (100% Tested)
Characteristic
Common Source Power Gain (VDD = 28 V, POUT = 50 W, IDQ = 350 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 350 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 50 W, IDQ = 350 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 50 W, IDQ = 350 mA, f = 960 MHz-- all phase angles at frequency of test)
Symbol
Gp s P-1dB h Y
Min
12.0 50 50 --
Typ
13.0 55 55 --
Max
-- -- -- 10:1
Units
dB Watts % --
Typical Performance
Gain vs. Power Output
16 15 -25
Intermodulation Distortion vs. Power Output
-15
VDD = 28 V IDQ = 350 mA f1 = 950.000 MHz IMD (dB) f2 = 950.100 MHz
-35 5th -45 7th -55 0 10 20 30 40 50 60 70 3rd Order
Gain (dB)
14 13 12 11 10 0 10 20 30 40 50 60 70
VDD = 28 V IDQ = 350 mA f = 960 MHz
Powe r Output (Watts)
Output Power (Watts PEP)
2
e
Output Power vs. Supply Voltage
60
15
PTF 10031
G ain vs. Frequency
(cir cu it optimized at 960 M H z )
Output Power (Watts)
55
14
50
Gain (dB)
13
45
IDQ = 350 mA f = 960 MHz
VD D = 28 V
12
IDQ = 350 m A P O UT = 50 W
40 22 24 26 28 30 32 34
11 950 96 0 970 98 0 9 90 1000
Drain-Source Voltage (Volts)
F r e q u e n cy (M H z )
Capacitance vs. Supply Voltage
160 140 18
Bias Voltage vs. Temperature
1.03 1.02 Bias Voltage (V) 1.01 1.00
0. 43
Cds & Cgs (pF)
120 100 80 60 40 20 0 0 10
Cgs
VGS = 0 V f = 1 MHz
16 14 12 10
Voltage normalized to 1.0 V Series show current (A)
Crss (pF)
0.99 0.98 0.97 0.96 0.95 -20 5 30 55 T e mp. (°C) 80
1. 25 2. 08 2. 9 3. 71 4. 53
Cds Crss
20 30 40
8 6 4 2
Supply Voltage (Volts)
105
Impedance Data (circuit optimized at 960 MHz)
VDD = 28 V, POUT = 50 W, IDQ = 350 mA
D
Z Source
Z Load
G S
Z0 = 50 W
Frequency
MHz 850 900 950 1000 R
Z Source W
jX -1.22 -0.44 +0.67 +1.30 R 1.38 1.20 1.08 0.96
Z Load W
jX 1.00 1.65 2.33 2.90 3 2.50 2.45 2.40 2.40
Others parts begin by pt
PT-1 PT-2 PT-3 PT-4 PT-5 PT-6 PT-7 PT-8 PT-9 PT-10 PT-11 PT-12 PT-13 PT-14 PT-15 PT-16 PT-17 PT-18 PT-19 PT-20 PT-21 PT-22 PT-23 PT-24 PT-25 PT-26 PT-27 PT-28 PT-29 PT-30 PT-31 PT-32
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