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Details, datasheet, quote on part number:PTF10036
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| Part: | PTF10036 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => DMOS (Double-diffused MOS) => RF Specific |
| Description: | 85 Watts, 860-960 MHZ Goldmos Field Effect Transistor |
| Company: | Ericsson Microelectronics |
| Datasheet: | Download PTF10036 datasheet File size : 226 kB |
| Request For quote: | Find where to buy PTF10036
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Datasheet text preview:
PTF 10036 85 Watts, 860960 MHz GOLDMOSTM Field Effect Transistor
Description
The PTF 10036 is an internally matched, 85 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. N i t r i d e surface passivation and full gold metallization ensure excellent device lifetime and reliability. · ·
· · · ·
INTERNALLY MATCHED Performance at 960 MHz, 28 Volts - Output Power = 85 Watts - Power Gain = 12.5 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source 100% Lot Traceability
Typica l Output Power vs. Input Power
100 60 Ef f iciency (%) 80 Output Pow er 60 40 20 0 0 1 2 3 4 5 6 40 50 Efficiency
Output Power (Watts)
A-1
VDD = 28 V IDQ = 800 mA Total f = 960 MHz
30 20 10
100 234 36 569 74
4
Input Power (Watts)
Package 20240
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 28 V, POUT = 85 W, IDQ = 800 mA Total, f = 900 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 800 mA Total, f = 900 MHz) Drain Efficiency (VDD = 28 V, POUT = 85 W, IDQ = 800 mA Total, f = 900 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 85 W(PEP), IDQ = 800 mA Total, f = 867, 867.1 MHz--all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol
Gp s P-1dB h Y
Min
11.0 85 50 --
Typ
12.5 90 55 --
Max
-- -- -- 3:1
Units
dB Watts % --
e
1
PTF 10036
Electrical Characteristics
Characteristic Conditions Symbol
V(BR)DSS IDSS VGS(th) gfs
e
(100% Tested--characteristics, conditions and limits shown per side)
Min
65 -- 3.0 --
Typ
-- -- -- 2.8
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
Drain-Source Breakdown Voltage VGS = 0 V, ID = 5 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A
Maximum Ratings
Parameter
Drain-Source Voltage(1) Gate-Source Voltage(1) Operating Junction Temperature Total Device Dissipation at Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C)
(1)
Symbol
VDSS VGS TJ PD TSTG RqJC
Value
65 ±20 200 250 1.43 40 to +150 0.7
Unit
Vdc Vdc °C Watts W/°C °C °C/W
per side
Typical Performance
Broa dba nd Test Fixture Performance
18 60 15 12 Ef f ic ienc y (%) Gain (dB) 9 6 3 50 40 -30
Broa dba nd Test Fixture Performance
Efficiency
16 Ef f iciency (%) 14 12 50 Gain (dB) 10 8 6 4 925
Gain
VDD = 28 V IDQ = 800 mA Total POUT = 85 W
Return Loss (dB)
Gain
VDD = 28 V IDQ = 800 mA Total ` POUT = 85 W
Return Loss (dB) 935 945 955
40 -30 5 -20 15 10 -25 0 -35
-20 10
10 -15 0 0 860 865 870 875 880 885 890 895 90020
Frequency (MHz)
Return Loss
Frequency (MHz)
2
Return Loss
Efficiency
60
e
25 Output Pow er (W) 20 100 80 120
PTF 10036
Inte rmodula tion Distortion vs. Power Output
-10
Output Power & Efficiency
Typica l POUT, Gain & Efficiency (at P-1dB) vs. Frequency
-20
Gain (dB)
IMD (dBc)
VDD = 28 V IDQ = 800 mA Total f1 = 880.0 MHz f2 = 880.1 MHz
3rd 5th
15 10 5 0 860
-30 -40 -50 -60 10
G a i n (d B )
60 Ef f ic ienc y (%) 40
VDD = 28 V IDQ = 800 mA Total
880 900 920
7th
940
20 960
20
30
40
50
60
70
80
90
100
Frequency (MHz)
Output Power (Watts-PEP)
Output Power vs. Supply Voltage
100
Pow e r Gain vs. Output Power
16
Output Power (Watts)
Power Gain (dB)
90 80 70 60 50 20 22 24 26 28 30 32 34
15 14 13 12 11
ID Q = 800 mA IDQ = 400 mA
VDD = 28 V f = 960 MHz
10.0 100.0
IDQ = 800 mA Total f = 960 MHz PIN = 4.5 W
IDQ = 200 mA
10 1.0
Supply Voltage (Volts)
Output Power (Watts)
Ca pa cita nce vs. Supply Voltage (one side) *
160 140
Bia s Voltage vs. Temperature
1.0 3 1.0 2 Bias Voltage (V) 1.0 1 1.0 0 0.9 9 0.9 8 0.9 7 0.9 6 0.9 5 -20 30 Te m p. (°C) 80 130
0.43 1.25 2.08 2.9 3.71 4.53
Cds & Cgs (pF)
120 100 80 60 40 20 0 0
Cgs
VGS = 0 V f = 1 MHz
Cds Crs s
10 20 30 40
20 18 16 14 12 10 8 6 4 2 0
Voltage normalized to 1.0 V Series show current (A)
Supply Voltage (Volts)
* This part is internally matched. Measurements of the finished product will not yield these results. 3
Crss (pF)
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