|
|
Part: PTF10043
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
Description: 12 Watts, 1.9-2.0 GHZ Goldmos Field Effect Transistor
Company: Ericsson Microelectronics
Datasheet: Download PTF10043 datasheet File size : 66 kB
Request For quote: Find where to buy PTF10043
Datasheet text preview:
PTF 10043 12 Watts, 1.92.0 GHz GOLDMOS ® Field Effect Transistor
Description
The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at 12 watts, it operates at 45% efficiency with 12 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. INTERNALLY MATCHED Performance at 2.0 GHz, 26 Volts - Output Power = 12 Watts Min - Power Gain = 12 dB Typ at 3 Watts - Efficiency = 45% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability
·
Typi ca l Output Power vs. Input Power
20
Output Power (Watts)
16 12 8 4 0 0.0 0.2 0.4 0.6 0.8 1.0
A-12
100
3456
9834
43
VDD = 26 V IDQ = 150 mA f = 2.0 GHz
Input Power (Watts)
Package 20222
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 26 V, POUT = 3 W, IDQ = 150 mA, f = 1.93, 2.0 GHz) Power Output at 1 dB Compressed (VDD = 26 V, POUT = 12 W, IDQ = 150 mA, f = 2.0 GHz) Drain Efficiency (VDD = 26 V, POUT = 12 W, IDQ = 150 mA, f = 2.0 GHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 12 W, IDQ = 150 mA, f = 2.0 GHz --all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol
Gps p-1dB hD Y
Min
11 12 40 --
Typ
12 14 45 --
Max
-- -- -- 10:1
Units
dB Watts % --
e
1
PTF 10043
Electrical Characteristics
Characteristic
(100% Tested)
e
Conditions Symbol
V(BR)DSS IDSS VGS(th) gfs
Min
65 -- 3.0 --
Typ
-- -- -- 0.8
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
Drain-Source Breakdown Voltage VGS = 0 V, ID = 5 mA Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance VDS = 26 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 2 A
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) TSTG RqJC
Symbol
VD S S VGS TJ PD
Value
65 ± 20 200 55 0.31 40 to +150 3.2
Unit
Vdc Vdc °C Watts W/ °C °C °C/W
Typical Performance
POU T, Gain & Efficiency (at P-1dB) vs. Frequency
Ef f ic ienc y
14
60
Gain Ef f ic ienc y (%)
Output Power & Efficiency
16 15
Gain
60 50 40
12
50 40
10 8 6 4 2 1900
Gain
14 13 12 11 1750
VDD = 26 V IDQ = 150 mA
Output Pow er (W)
30 20
VCC = 26 V - 35 0 IDQ = 150 mA POUT = 10 W
Return Loss
20 - 15 10 - 25
1800
1850
1900
1950
2000
10 2050
1925
1950
1975
0 - 35 2000
Fre quency (MHz)
Frequency (MHz)
2
Return Loss (dB) Efficiency (%)
Broadband Test Fixture Performance
Gain (dB)
e
Output Power vs. Supply Voltage
20
0 -10
PTF 10043
I nte rm odul a tion Distortion vs. Output Power
VDD = 26 V, IDQ = 150 mA f1 = 1999.9 MHz, f2 = 2000.0 MHz
Output Power (Watts)
15
IMD (dBc)
-20 -30 -40 -50 -60
10
5
IDQ = 150 mA f = 2.0 GHz
0 22 24 26 28 30 32 34
-70 0 2.5 5 7.5 10 12.5 15
Supply Voltage (Volts)
Output Power (Watts-PEP)
Pow e r Gain vs. Output Power
16 15
Ca pa ci ta nce vs. Supply Voltage *
50 45 40 35 30 25 20 15 10 5 0 0 10 3
Cds and Cgs (pF)
Power Gain (dB)
14 13 12 11 10 9 8 0.1
IC Q = 150 mA IC Q = 75 mA
Cgs
VGS =0 V f = 1 MHz
2.5
1.5
Cds Crs s
20 30 40
1 0.5 0
IC Q = 37 mA
VDD = 26 V f = 2.0 GHz
1.0 10.0 100.0
Output Power (Watts)
Supply Voltage (Volts)
*This part is internally matched. Measurements of the finished product will not yield these figures.
Bia s Voltage vs. Temperature
1.03 1.02
Bias Voltage (V)
1.01 1.00 0.99 0.98 0.97 0.96 0.95 0.94 - 20 0.15 1 1.85 0 20
Voltage nomalized to 1.0 V Series show current (A)
0.575 1.425 2.275 40 60 80 100
Te mp. (°C)
3
Crss (pF)
2
Others parts begin by pt
PT-1 PT-2 PT-3 PT-4 PT-5 PT-6 PT-7 PT-8 PT-9 PT-10 PT-11 PT-12 PT-13 PT-14 PT-15 PT-16 PT-17 PT-18 PT-19 PT-20 PT-21 PT-22 PT-23 PT-24 PT-25 PT-26 PT-27 PT-28 PT-29 PT-30 PT-31 PT-32
|
|
|
