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Part: PTF10045
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
Description: 30 Watts, 1.60-1.65 GHZ Goldmos Field Effect Transistor
Company: Ericsson Microelectronics
Datasheet: Download PTF10045 datasheet File size : 66 kB
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Datasheet text preview:
PTF 10045 30 Watts, 1.601.65 GHz GOLDMOSTM Field Effect Transistor
Description
The PTF 10045 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.65 GHz. It is rated at 30 watts power output. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. · Performance at 1650 MHz, 28 Volts - Output Power = 30 Watts - Power Gain = 11.5 dB Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability Back Side Common Source 100% Lot Traceability
· · · · ·
Typical Output Power and Efficiency vs. Input Power
40 60
Output Power (Watts)
Out put Power 20 40
Efficiency (%)
30
Effic ienc y
50
A-12
1004 5
3456 9955
VDD = 28V
10
IDQ = 380 mA f = 1650 MHz
0 1 2 3 4
30
0
20
Input Power (Watts)
Package 20222
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Tf lange = 25°C Above 25°C derate by Storage Temperature Thermal Resistance (Tf lange = 70°C) TS T G RqJC
Symbol
VD S S VGS TJ PD
Value
65 ± 20 200 120 0.7 150 1.4
Unit
Vdc Vdc °C Watts W/°C °C °C/W
e
1
PTF 10045
Electrical Characteristics (100% Tested)
Characteristic
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance
e
Conditions
VGS = 0 V, ID = 25 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A
Symbol
V( B R ) D S S ID S S VGS(th) gf s
Min
65 -- 3.0 --
Typ
-- -- -- 2.0
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
RF Specifications (100% Tested)
Characteristic
Common Source Power Gain (VDD = 28 V, POUT = 30 W, IDQ = 380 mA, f = 1650 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 380 mA, f = 1650 MHz) Drain Efficiency (VDD = 28 V, POUT= 30 W, IDQ = 380 mA, f = 1650 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 30 W, IDQ = 380 mA, f = 1650 MHz-- all phase angles at frequency of test)
Symbol
Gp s P-1dB h Y
Min
10.0 30 40 --
Typ
11.5 35 43 --
Max
-- -- -- 10:1
Units
dB Watts % --
Typical Performance
Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency
Output Power & Efficiency
13 12 Gain (dB) Effic ienc y (%) 70 60 50 40
Broadband Test Fixture Performance
Gain Effic ienc y (%) 11 50 40
Gain
11 10 9 8 1400
Gain (dB)
10 9 8 7 6 1600
VDD = 28 V IDQ = 380 mA POUT = 30 W
Return Loss (dB)
- 20 5 -10 10
VDD = 28 V IDQ = 380 mA
1450 1500
Out put Power (W)
30
1550
1600
20 1650
1610
1620
1630
1640
-15 0 1650
Fre que ncy (MHz)
Fre que ncy (MHz)
2
Return Loss
0 30
Efficienc y
12
60
e
Output Power vs. Supply Voltage
40 -10
PTF 10045
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit) VDD = 28 V, IDQ = 380 mA
Output Power (Watts)
35
-20
f1 = 1549.9 MHz, f2 = 1550.0 MHz
3rd Order
IMD (dBc)
-30 -40 -50 -60
30
5t h 7t h
25
IDQ = 380 mA f = 1650 MHz
20 24 26 28 30 32 34 36
0
10
20
30
40
Supply Voltage (Volts)
Output Power (Watts-PEP)
Capacitance vs. Supply Voltage
120 6
Bias Voltage vs. Temperature
1.03 1.02 Bias Voltage (V) 1.01 1.00 0.99 0.98 0.97
0 40
0. 3 0. 87 1. 44 2. 01 2. 58 3. 15
Cds and Cgs (pF)
100 80 60 40 20 0 0 10
VGS = 0 V f = 1 MHz
5
Voltage normalized to 1.0 V Series show current (A)
Cgs Cds Crss
20 30
3 2 1
Crss (pF)
4
0.96 -20 30 T e mp. (°C) 80 130
Supply Voltage (Volts)
Impedance Data
VDD = 28 V, POUT = 30 W, IDQ = 380 mA
D
0
Z0 = 10 W
Z Source
Z Load
0 .2
G S
0 .1
Z Load
1400 MHz
Frequency
MHz 1400 1450 1500 1550 1600 1650
Z Source W
R 1.9 1.5 1.1 0.9 0.8 0.7 jX 1.2 0.7 0.5 0.5 0.6 0.7 R 2.0 2.0 2.0 2.0 2.0 1.8
Z Load W
jX 2.1 2.0 2.0 1.9 1.6 1.2 3
1650 MHz 1400 MHz
1650 MHz
Z Source
0 .0 0.1 0.2 0.3
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