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Details, datasheet, quote on part number:PTF10048
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Datasheet text preview:
PTF 10048 30 Watts, 2.12.2 GHz, W-CDMA GOLDMOS ® Field Effect Transistor
Description
The PTF 10048 is an internally matched 30watt GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It operates at 40% efficiency with 10.5 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
INTERNALLY MATCHED Guaranteed Performance at 2.17 GHz, 28 V - Output Power = 30 Watts Min - Gain = 10.5 dB Typ at 30 Watts Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability
Typica l Output Power & Efficiency vs. Input Power
40
Ef f ic ienc y
45
Output Power (Watts)
Efficiency (%) X
30
35
20
10
VDD = 28 V IDQ = 425 mA f = 2170 MHz
Output Pow er
25
A-1
100
234
569
48
940
15
0 0 1 2 3 4
5
Input Power (Watts)
Package 20237
RF Specifications
Characteristic
(100% Tested)
Symbol
Gps P-1dB h Y
Min
10 30 30 --
Typ
11 36 40 --
Max
-- -- -- 10:1
Units
dB Watts % --
Gain (VDD = 28 V, POUT = 10 W, IDQ = 425 mA, f = 2.11 & 2.17 GHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 425 mA, f = 2.17 GHz) Drain Efficiency (VDD = 28 V, POUT = 30 W, IDQ = 425 mA, f = 2.17 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 30 W, IDQ = 425 mA, f = 2.17 GHz --all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
e
1
PTF 10048
Electrical Characteristics
Characteristic
(100% Tested)
e
Conditions Symbol
V(BR)DSS I DSS VGS(th) gfs
Min
65 -- 3.0 --
Typ
65 -- -- 1.8
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
Drain-Source Breakdown Voltage VGS = 0 V, ID = 50 mA Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 6 A
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) TSTG RqJC
Symbol
V DSS V GS TJ PD
Value
65 ±20 200 120 0.66 40 to +150 1.5
Unit
Vdc Vdc °C Watts W/°C °C °C/W
Typical Performance
12 Gain (dB) 11
50 45 40
Output Power & Efficiency
Ef f ic iency (%) 12 Gain (dB) 35
Gain (dB)
10 8 6 4 2 2100
Gain
Ef f iciency (%)
35 30 25 2300
POUT = 10 W
9
VDD = 28 V IDQ = 425 mA
2050 2100
Output Pow er (W)
8 2000
2150
2200
2250
2125
2150
Frequency (MHz)
Frequency (MHz)
2
Return Loss
10
VDD = 28 V IDQ = 425 mA
20 5 -5 - 10 - 15 15 Retur n Loss - 20 - 25 5 - 30 2175 2200
Efficiency
Typica l POUT, Gain & Efficiency (at P-1dB) vs. Frequency
Broa dba nd Test Fixture Performance
14 45
e
Typical Performance
Output Power vs. Supply Voltage
45 -20
PTF 10048
Inte rmodula tion Distortion vs. Output Power
(as measured in a broadband circuit) VDD = 28 V, IDQ = 425 mA f1 = 2169 MHz, f2 = 2170 MHz
3rd Order
Output Power (Watts)
40
-30
IMD (dBc)
35
-40 -50 -60 -70 5th 7th
30
IDQ = 425 mA f = 2170 MHz
25 22 24 26 28 30 32 34
0
5
10
15
20
25
30
Supply Voltage (Volts)
Output Power (Watts-PEP)
Pow e r Gain vs. Output Power
12 160 11 140
Ca pa ci ta nce vs. Supply Voltage *
9
Cds and Cgs (pF)
ICQ = 425 mA
Power Gain (dB)
120 100 80 60 40 20 0
Crs s Cgs
VGS = 0 V f = 1 MHz
8 7 5 6
9 8 7 6 0
ICQ = 213 mA ICQ = 106 mA
Cds
4 3 2 1 0
VDD = 28 V f = 2170 MHz
1 100
0
10
20
30
40
Output Power (Watts)
Supply Voltage (Volts)
*This part is internally matched. Measurements of the finished product will not yield these figures.
Bia s Voltage vs. Temperature
1 .0 3 1 .0 2 Bias Voltage (V) 1 .0 1 1 .0 0 0 .9 9 0 .9 8 0 .9 7 0 .9 6 0 .9 5 -2 0 30 Tem p. (°C) 3 80 130
0.200 0.692 1.183 1.675 2.167 2.658
Voltage normalized to 1.0 V Series show current (A)
Crss (pF)
10
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