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Details, datasheet, quote on part number:PTF10052
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| Part: | PTF10052 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => DMOS (Double-diffused MOS) => RF Specific |
| Description: | 35 Watts, 1.0 GHZ Goldmos Field Effect Transistor |
| Company: | Ericsson Microelectronics |
| Datasheet: | Download PTF10052 datasheet File size : 511 kB |
| Request For quote: | Find where to buy PTF10052
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Datasheet text preview:
PTF 10052 35 Watts, 1.0 GHz GOLDMOSTM Field Effect Transistor
Description
The PTF 10052 is a 35 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. · Performance at 960 MHz, 28 Volts - Output Power = 35 Watts - Power Gain = 13.5 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source 100% Lot Traceability Available in Package 20222 as PTF 10007
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Typi ca l Output Power & Efficiency vs. Input Power
50 40 Output Pow er (W) Ef f ic ienc y (%) 100 80 60 40 20 0 0 1 2 3
Package 20235
Efficiency
B-1
234
100 52 56
991
Output Power
6
30 20 10 0
VD D = 28 V ID Q = 300 m A f = 960 MHz
A-12
1000
3456
9725
7
Package 20222
Input Power (Watts)
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 300 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz-- all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol
Gps P-1dB h Y
Min
12.0 35 50 --
Typ
13.5 -- 55 --
Max
-- -- -- 10:1
Units
dB Watts % --
e
1
PTF 10052
Electrical Characteristics
Characteristic
(100% Tested)
e
Conditions Symbol
V(BR)DSS IDSS VGS(th) gfs
Min
65 -- 3.0 --
Typ
70 -- -- 2.8
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
Drain-Source Breakdown Voltage VGS = 0 V, ID = 5 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) TSTG RqJC
Symbol
VDSS VGS TJ PD
Value
60 ± 20 200 120 0.7 40 to +150 1.4
Unit
Vdc Vdc °C Watts W/°C °C °C/W
Typical Performance
POUT, Gain & Efficiency (at P-1dB) vs. Frequency
Output Power & Efficiency
30 25 20 Ef f ic ienc y (%) 70 60 50
Gain (dB)
Broa dba nd Test Fixture Performance
20 Ef f ic ienc y (%) 16 50 Gain 12
Gain (dB)
Gain
VDD = 28 V IDQ = 300 mA POUT = 35 W
40 -30 5 20 -15
15 10 5
VDD = 28 V IDQ = 300 mA
500 600 700
Output Pow er (W) 30 20 1000
8
0 400
800
900
4 925
930
935
940
Return Loss (dB) 10 -25 0 945 950 955 96035 -
Frequency (MHz)
Frequency (MHz)
2
Return Loss
40
Efficiency
60
e
Typical Performance
Pow e r Gain vs. Output Power
17 16 15 14 13 12 11 0.1 1.0 10.0 100.0
- 10 - 20
PTF 10052
Inte rm odula ti on Distortion vs. Output Power
VD D = 28 V IDQ = 300 m A f1 = 960.000 MHz f2 = 960.100 MHz
3r d
Power Gain (dB)
ID Q = 300 mA
IMD (dBc)
- 30 - 40 - 50 - 60 0
IDQ = 150 mA IDQ = 75 mA
VDD = 28 V f = 960 MHz
5th 7th
10
20
30
40
50
Output Power (Watts)
Output Power (Watts-PEP)
Output Power vs. Supply Voltage
45 120
Ca pa cita nce vs. Supply Voltage
40 100 80 60 40 20 0
Output Power (Watts)
Cds and Cgs (pF)
25 20
35
Cds Crss
0 10 20 30 40
15 10 5 0
30 22 24 26 28 30 32 34
Supply Voltage (Volts)
Supply Voltage (Volts)
Bi a s Voltage vs. Temperature
1.0 3 1.0 2 Bias Voltage (V) 1.0 1 1.0 0 0.9 9 0.9 8 0.9 7 0.9 6 0.9 5 -20 30 Tem p. (°C) 80 130 Voltage normalized to 1.0 V Series show current (A)
0.3 0.87 1.44 2.01 2.58 3.15
3
Crss (pF)
40
IDQ = 300 mA POUT = 5 W f = 960 MHz
Cgs
VGS =0 V f = 1 MHz
35 30
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