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Part: PTF10053
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
Description: 12 Watts, 2.0 GHZ Goldmos Field Effect Transistor
Company: Ericsson Microelectronics
Datasheet: Download PTF10053 datasheet File size : 66 kB
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Datasheet text preview:
PTF 10053 12 Watts, 2.0 GHz GOLDMOS ® Field Effect Transistor
Description
The PTF 10053 is a 12watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. · Guaranteed Performance at 1.99 GHz, 26 V - Output Power = 12 Watts Min - Power Gain = 12 dB Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability
· · · · ·
Typical Output Power & Efficiency vs. Input Power
16 14 Effic ienc y 50 45 Efficiency (%) X 40 35 Out put Power 8 6 30 25
Output Power (Watts)
12 10
A-1
100 2 3 4 53 569
911
VDD = 26 V
4 2 0 0. 0 0. 5 1. 0 1. 5 2. 0
IDQ = 155 mA f = 2.0 GHz
20 15 10
Input Power (Watts)
Package 20244
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 26 V, POUT = 3 W, IDQ = 155 mA, f = 1.93, 1.99 GHz) Power Output at 1 dB Compression (VDD = 26 V, IDQ = 155 mA, f = 1.99 GHz) Drain Efficiency (VDD = 26 V, POUT = 12 W, IDQ = 155 mA, f = 1.99 GHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 12 W, IDQ = 155 mA, f = 1.99 GHz --all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol
Gp s P-1dB hD Y
Min
10 12 40 --
Typ
12 -- -- --
Max
-- -- -- 10:1
Units
dB Watts % --
e
1
PTF 10053
Electrical Characteristics (100% Tested)
Characteristic
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance
e
Conditions
VGS = 0 V, ID = 50 mA VDS = 26 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 2 A
Symbol
V(BR)DSS ID S S VGS(th) gf s
Min
65 -- 3.0 --
Typ
-- -- -- 0.8
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) TS T G RqJC
Symbol
VDSS VGS TJ PD
Value
65 ± 20 200 58 0.33 40 to +150 3.0
Unit
Vdc Vdc °C Watts W/°C °C °C/W
Typical Performance
POUT, Gain & Efficiency (at P-1dB) vs. Frequency
14
Broadband Test Fixture Performance
60 Gain (dB) 50 40 Effic ienc y (%)
Gain (dB) and Output Power (W)
16 15 14 13 12 11 10
Out put Power (W)
55 50
12
Efficiency (%) X
40
Gain (dB)
Effic ienc y (%)
45
10 8 6 4 2 1925
VDD = 26 V IDQ = 155 mA
Gain (dB)
35 30 25 20 2050
IDQ = 155 mA Pout = 10 W
Return Loss
20 -10 -20 10 -30 0 2000
9 1750
1800
1850
1900
1950
2000
1950
1975
Fre que ncy (MHz)
Fre que ncy (MHz)
2
Return Loss (dB) X
VDD = 26 V
30 0
Efficiency (%)
e
Power Gain vs. Output Power
13 18
PTF 10053
Output Power vs. Supply Voltage
Output Power (Watts)
12
Power Gain (dB)
IDQ = 180 mA
11 10 9
16
IDQ = 90 mA IDQ = 45 mA
VDD = 26 V f = 2.0 GHz
1 10 100
14
12
8 7 0
IDQ = 155 mA f = 2.0 GHz
10 22 24 26 28 30
Output Power (Watts)
Supply Voltage (Volts)
3rd Order IMD vs. Output Power
-20 50 45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 0
Capacitance vs. Supply Voltage
3.5 3.0
Cds and Cgs (pF)
-30
Cgs
VGS =0 V f = 1 MHz
2.0 1.5
IMD (dBc)
-40
VDD = 26 V IDQ = 155 mA f1 = 2000.0 MHz f2 = 2000.1 MHz
Cds
-50
Crss
10 20 30 40
1.0 0.5
-60
Output Power (Watts-PEP)
Supply Voltage (Volts)
1. 03 1. 02 1. 01
Bias Voltage vs. Temperature
Voltage nomalized to 1.0 V Series show current (A)
Bias Voltage (V)
1. 00 0. 99 0. 98 0. 97 0. 96 0. 95 0. 94 -20 0 20 40 60 80 100 0. 075 0. 5 0. 925 0. 2875 0. 7125 1. 1375
T e mp. (°C)
3
Crss (pF)
2.5
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