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Details, datasheet, quote on part number:PTF10065
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| Part: | PTF10065 |
| Category: | Discrete => Transistors => Bipolar => RF |
| Description: | 30 Watts, 1.93-1.99 GHZ Goldmos Field Effect Transistor |
| Company: | Ericsson Microelectronics |
| Datasheet: | Download PTF10065 datasheet File size : 97 kB |
| Request For quote: | Find where to buy PTF10065
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Datasheet text preview:
PTF 10065 30 Watts, 1.931.99 GHz GOLDMOS ® Field Effect Transistor
Description
The PTF 10065 is a 30watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. It typically operates with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. · · INTERNALLY MATCHED Guaranteed Performance at 1.99 GHz, 28 V - Output Power = 30 Watts Min - Power Gain = 11.0 dB Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability
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Out put Power and Efficiency vs. Input Power
40 Out put Power 80 70 60 E ffic ienc y 20
Output Power (Watts)
30
Efficiency
50 40
e
065 123 456 992 1A 10
VDD = 28 V
10
30 20 10 0
IDQ = 380 mA f = 1.99 GHz
0 1 2 3
0
Input Power (Watts)
Package 20237
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 28 V, POUT = 3 W, IDQ = 380 mA, f = 1.93, 1.99 GHz) ACPR (40 Walsh Codes) (VDD = 28 V, POUT = 3 W(CDMA), IDQ = 380 mA, f = 1.99 GHz) (VDD = 28 V, POUT = 3 W(CDMA), IDQ = 380 mA, f = 1.99 GHz) Gain Flatness (VDD = 28 V, POUT = 3 W, IDQ = 380 mA, f = 1.9301.990 GHz) Drain Efficiency (VDD = 28 V, POUT = 3 W, IDQ = 380 mA, f = 1.99 GHz) All published data at TCASE = 25°C unless otherwise indicated.
Symbol
Gps ±885 KHz ACPR ±1.98 MHz ACPR GDf hD
Min
-- - 50 - 62 -- 9
Typ
11.0 -- -- -- --
Max
-- -- -- 0.7 --
Units
dB dBc dBc dB %
(table continues next page)
e
1
PTF 10065
RF Specifications (cont.) (100% Tested)
Characteristic
Power Output at 1 dB Compressed (VDD = 28 V, IDQ = 380 mA, f = 1.99 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 30 W, IDQ = 380 mA, f = 1.99 GHz--all phase angles at frequency of test) Input Return Loss (VDD = 28 V, POUT = 3 W, IDQ = 380 mA, f = 1.93, 1.99 GHz) Insertion Phase (Referenced to Correlation Devices) (VDD = 28 V, POUT = 3 W, IDQ = 380 mA, f = 1.96 GHz)
e
Symbol
P-1dB Y
Min
30 --
Typ
-- --
Max
-- 10:1
Units
Watts --
Rtn Loss f
10 10
-- --
-- +10
dB Deg.
Electrical Characteristics (cont.) (100% Tested) (100% Tested)
Characteristic Conditions Symbol
V(BR)DSS I DSS VGS(th) g fs I GSsf VGS(q)
Min
62 -- -- -- -- 3.0
Typ
-- -- 3.8 1.8 -- --
Max
-- 1.0 -- -- 1 5.0
Units
Volts mA Volts Siemens mA V
Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Gate Quiescent Voltage VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 6 A VGS = 10 V VDS = 28 V, ID = 380 mA
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) TSTG RqJC
Symbol
VDSS VGS TJ PD
Value
62 ± 20 200 120 0.7 40 to +150 1.4
Unit
Vdc Vdc °C Watts W/°C °C °C/W
2
Typical Performance
T yp ical P OUT , Gain & Efficiency (at P-1dB) vs. Frequency
80 70 11 E ffi c ie n c y (% ) x Output Power & Efficiency
e
12
PTF 10065
Broadband Test Fixture Performance
12 E ffic ienc y 11 G ai n -60 5 -15 50 -25 -35 40 1990 80
VDD = 28 V, IDQ = 380 mA P O UT = 30 W
70
Gain
G a in (dB)
VD D = 28 V ID Q = 380 m A
60 50 40
10 O u t p u t Power (W ) 9 1930
10 Ret urn Loss
30 20 1 9 90
1945
1960
1975
9 1930
1945
1960
1975
F r e q u e n c y (M H z )
Fr e que ncy (MHz)
Power Gain vs. Output Power
12 11 10 IDQ = 380 mA
Gain vs. Frequency
12. 0 11. 8
Power Gain (dB)
9 8 7 6 5 4 0
IDQ = 180 mA
Gain (dB) x
11. 6 11. 4 11. 2 11. 0 1930
VDD = 28 V IDQ = 380 mA P O UT = 3 W
IDQ = 90 mA 10
VDD = 28 V f = 1990 MHz
1000
1940
1950
1960
1970
1980
1990
Output Power (Watts)
Fre que ncy (MHz)
Output Power (@ 1 dB Compression) vs. Supply Voltage
40
ACPR vs. W-CDMA Output Power
(as measured in a broadband circuit)
-30
Output Power (Watts)
35
VDD = 28 V IMD (dBc) x
-40
30 25 20 15 10 24 25 26 27 28 29 30
IDQ = 380 mA
f = 1930 MHz f = 1990 MHz
IDQ = 380 mA f = 1990 MHz
-50
f = 1960 MHz -60 30 35 40 45
Supply Voltage (Volts)
O utput Power (dBm)
3
Return Loss (dB) xx Efficiency (%)
Gain (dB) x
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