|
|
Part: PTF10100
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> DMOS (Double-diffused MOS)
-> RF Specific
Description: 165 Watts, 860-900 MHZ Ldmos Field Effect Transistor
Company: Ericsson Microelectronics
Datasheet: Download PTF10100 datasheet File size : 66 kB
Request For quote: Find where to buy PTF10100
Datasheet text preview:
e
PTF 10100 165 Watts, 860900 MHz LDMOS Field Effect Transistor
Description
The 10100 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz. It is rated at 165 watts power output. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. · ·
· · · ·
INTERNALLY MATCHED Performance at 894 MHz, 28 Volts - Output Power = 165 Watts - Power Gain = 13.0 dB Typ - Drain Efficiency = 50% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source 100% lot traceability
Typical Output Power & Efficiency vs. Input Power
180 60 Effic ienc y
Output Power (Watts)
Efficiency (%)
140
45
100
30
A-12 3456 9917
1010 0
VDD = 28.0 V
60 Out put Power 20 0 1 2 3 4 5 6 7 8 0
IDQ = 1.8 A Total f = 880 MHz
15
Input Power (Watts)
Package 20250
Maximum Ratings
Parameter
Drain-Source Voltage (1) Gate-Source Voltage (1) Operating Junction Temperature Total Device Dissipation at Tf lange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tf lange = 70°C)
(1) per side
Symbol
VDSS VGS TJ PD TSTG RqJC
Value
65 ± 20 200 500 2.85 40 to +150 0.35
Unit
Vdc Vdc °C Watts W/°C °C °C/W
1
PTF 10100
Electrical Characteristics (per side) (100% Tested)
Characteristic
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance
e
Conditions
VGS = 0 V, ID = 5 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A
Symbol
V( B R ) D S S ID S S VGS(th) gf s
Min
65 -- -- --
Typ
-- -- 4.3 2.5
Max
-- 1.0 -- --
Units
Volts mA Volts Siemens
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 28 V, POUT = 165 W, IDQ = 1.8 A Total, f = 894 MHz) Power Output at 1 dB Compression (VDD = 28 V, ICQ = 1.8 A Total, f = 880 MHz) Drain Efficiency (VDD = 28 V, POUT = 165 W, IDQ = 1.8 A Total, f = 894 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 165 W(PEP), IDQ = 1.8 A Total, f = 893.9, 894 MHz--all phase angles at frequency of test)
Symbol
Gp s P-1dB h Y
Min
12.0 165 45 --
Typ
13.0 180 50 --
Max
-- -- -- 10:1
Units
dB Watts % --
Typical Performance
Typical POUT (at P-1dB), Gain vs. Frequency
Output Power & Efficiency
18 Out put Power (W ) 16 175 225
Broadband Test Fixture Performance
16 Effic ienc y (%) 50 14 60
Gain (dB)
Gain
40
Gain
VDD = 28 V
14 Gain (dB) 12 E ffic ienc y (%) 10 865 870 875 880 885 890 25 895 75
IDQ = 1.8 A Total
125
12
VDD = 28 V IDQ = 1.8 A Total POUT = 165 W
Return Loss (dB)
30 -20 5 -10 -10 15 -20 -0 5 2 895
10
8 865
870
875
880
885
890
Fre que ncy (MHz)
Fre que ncy (MHz)
2
Return Loss
Efficienc y
e
Typical Performance
Output Power vs. Supply Voltage
200 -10
PTF 10100
Intermodulation Distortion vs. Output Power
VDD = 28 V
-20
Output Power (Watts)
180 160
ICQ = 1.8 A Total f1 = 880.0 MHz f2 = 880.1 MHz
3rd order
IMD (dBc)
30
140 120 100 80 60 40 18 20 22 24 26 28
-30 -40 -50 -60 30
IDQ =1.8 A Total f = 894 MHz
50
70
90
110
130
150
170
Supply Voltage (Volts)
Output Power (Watts-PEP)
Capacitance vs. Supply Voltage (per side) *
600 500 95 85
Cds & Cgs (pF)
Cgs
400 300 200 100 0 0 10 20 30 40
75
Cds
VGS = 0 V f = 1 MHz
55 45 35 25
Crss
15 5
Supply Voltage (Volts) *This part is internally matched. Measurements of the finished product will not yield these figures.
3
Crss (pF)
65
Others parts begin by pt
PT-1 PT-2 PT-3 PT-4 PT-5 PT-6 PT-7 PT-8 PT-9 PT-10 PT-11 PT-12 PT-13 PT-14 PT-15 PT-16 PT-17 PT-18 PT-19 PT-20 PT-21 PT-22 PT-23 PT-24 PT-25 PT-26 PT-27 PT-28 PT-29 PT-30 PT-31 PT-32
|
|
|
