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Details, datasheet, quote on part number:PTF10107
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Datasheet text preview:
PTF 10107 5 Watts, 2.0 GHz GOLDMOS ® Field Effect Transistor
Description
The PTF 10107 is a 5watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. · Guaranteed Performance at 1.99 GHz, 26 V - Output Power = 5 Watts Min - Power Gain = 11 dB Min Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability
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Typica l Output Power & Efficiency vs. Input Power
8 100 Output Pow er Ef f ic ienc y 60 Efficiency (%) X 80
Output Power (Watts)
7 6 5 4 3 2 1 0 0.0
A-1
101 234 07 569
845
VDD = 26 V IDQ = 70 mA f = 2.0 GHz
0.1 0.2 0.3 0.4
40 20 0 0.5
Input Power (Watts)
Package 20244
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 26 V, POUT = 1 W, IDQ = 70 mA, f = 1.93, 1.99 GHz) Power Output at 1 dB Compression (VDD = 26 V, IDQ = 70 mA, f = 1.99 GHz) Drain Efficiency (VDD = 26 V, POUT = 5 W, IDQ = 70 mA, f = 1.99 GHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 5 W, IDQ = 70 mA, f = 1.99 GHz --all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol
Gp s P-1dB hD Y
Min
11 5 40 --
Typ
-- 6.5 -- --
Max
-- -- -- 10:1
Units
dB Watts % --
e
1
PTF 10107
Electrical Characteristics
Characteristic
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance (100% Tested)
e
Conditions
VGS = 0 V, ID = 20 mA VDS = 26 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 2 A
Symbol
V(BR)DSS ID S S VGS(th) gf s
Min
65 -- 3.0 --
Typ
-- -- -- 0.8
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) TS T G RqJC
Symbol
VDSS VGS TJ PD
Value
65 ± 20 200 39 0.22 40 to +150 4.5
Unit
Vdc Vdc °C Watts W/°C °C °C/W
Typical Performance
POUT, Gain & Efficiency (at P-1dB) vs. Frequency
15 Gain & Output Power x 13 11 9 7 5 1750 Output Pow er 1800 1850 1900 1950 2000 Gain (dB) Efficiency (%) 65 55 14 Gain (dB) 12 50 Ef f ic ienc y (%) 40 - 30 5 - 20 15 - 10 25 Retur n Loss (dB) 2 1925 1950 1975 - 05 3 2000
Broa dba nd Test Fixture Performance
Efficiency Return Loss
60
Efficiency
Gain
45 35 25 15 2050
10 8 6 4
VDD = 26 V IDQ = 70 mA
VCC = 26 V IDQ = 70 mA POUT = 4 W
Fre que ncy (MHz)
Fre que nc y (MHz)
2
e
Output Power vs. Supply Voltage
10
0 - 10
PTF 10107
Inte rmodula tion Distortion vs. Output Power
VDD = 26 V IDQ = 70 mA f1 = 1999.9 MHz f2 = 2000.0 MHz
IM3 IM5 IM7
Output Power (Watts)
8 6 4 2 0 22 24 26 28 30
IMD (dBc)
- 20 - 30 - 40 - 50 - 60 - 70 0
IDQ = 70 mA f = 2.0 GHz
1
2
3
4
5
6
7
Supply Voltage (Volts)
Output Power (Watts-PEP)
Pow e r Gain vs. Output Power
14 13
Ca pa cita nce vs. Supply Voltage
18 6 15 12 9
ID Q = 70 mA IDQ = 40 mA
Cds and Cgs (pF) x Cgs Cds
Power Gain (dB)
VGS = 0 V f = 1 MHz
5
11 10 9 8 0.1 1.0 10.0
3 2
ID Q = 20 mA
VDD = 26 V f = 2.0 GHz
6 3 0 0 10 20 30 40
Crs s
1 0
Output Power (Watts)
Supply Voltage (Volts)
Bia s Voltage vs. Temperature
1 .0 3 1 .0 2 Bias Voltage (V) 1 .0 1 1 0 .9 9 0 .9 8 0 .9 7 0 .9 6 -2 0 30 Te m p. (°C) 80 13 0
0.05 0.145 0.24 0.335 0.43 0.525
Voltage normalized to 1.0 V Series show current (A)
3
Crss (pF)
12
4
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