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Part: PTF10111
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
Description: 6 Watts, 1.5 GHZ Goldmos Field Effect Transistor
Company: Ericsson Microelectronics
Datasheet: Download PTF10111 datasheet File size : 66 kB
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Datasheet text preview:
PTF 10111 6 Watts, 1.5 GHz GOLDMOSTM Field Effect Transistor
Description
The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates @ 50% efficiency and 16 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. · Performance at 1.5 GHz, 28 Volts - Output Power = 6 Watts - Efficiency = 50% Typ - Power Gain = 16 dB Typ Full Gold Metallization Silicon Nitride Passivated 100% Lot Traceability
· · ·
Typica l Output Power vs. Input Power
8
Output Power (Watts)
7 6 5 4 3 2 1 0 0.0 0.1 0.2 0.3 0.4 0.5
A-12 3456 9820
1011 1
VDD = 28V IDQ = 75 mA f = 1.5 GHz
Input Power (Watts)
Package 20222
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Tf lange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tf lange = 70°C) TSTG RqJC
Symbol
VD S S VGS TJ PD
Value
65 ± 20 200 36 0.208 40 to +150 4.8
Unit
Vdc Vdc °C Watts W/°C °C °C/W
e
1
PTF 10111
Electrical Characteristics (100% Tested)
Characteristic
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance
e
Conditions
VGS = 0 V, ID = 40 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 0.5 A
Symbol
V( B R ) D S S ID S S VGS(th) gf s
Min
65 -- 3.0 --
Typ
68 -- -- 0.2
Max
-- 1 5.0 --
Units
Volts mA Volts Siemens
RF Specifications (100% Tested)
Characteristic
Common Source Power Gain (VDD = 28 V, POUT = 6 W, IDQ = 75 mA, f = 1.5 GHz) Power Output at 1 dB Compressed (VDD = 28 V, IDQ = 75 mA, f = 1.5 GHz) Drain Efficiency (VDD = 28 V, POUT = 6 W, IDQ = 75 mA, f = 1.5 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 6 W, IDQ = 75 mA, f = 1.5 GHz-- all phase angles at frequency of test)
Symbol
Gp s P-1dB hD Y
Min
15.0 6 45 --
Typ
16 7 50 --
Max
-- -- -- 30:1
Units
dB Watts % --
Typical Performance
Typica l POUT, Gain & Efficiency (at P-1dB) vs. Frequency
90 14 80 Gain 70 60 11 50 Ef f icienc y (%) 40 VDD = 28 V 30 8 IDQ = 75 mA 20 Output Pow er (W) 10 5 0 1300 1400 1500 1600 1700
16
60 Ef f ic ienc y (%) 50
15
Gain (dB)
Gain (dB)
40
VDD = 28 V
14
IDQ = 75 mA POUT = 6 W
Retur n Loss (dB)
-30 5 -20 15 10 -25
13
12 1450
1475
1500
1525
0 -3 1550 5
Frequency (MHz)
Frequency (MHz)
2
Return Loss (dB) Efficiency (%)
Broa dba nd Test Fixture Performance
Output Power & Efficiency
Gain (dB)
e
Output Power vs. Supply Voltage
10
-10 -20
PTF 10111
Inte rmodula tion Distortion vs. Output Power
VDD = 28 V IDQ = 75 mA f1 = 1500.0 MHz f2 = 1500.1 MHz
Output Power (Watts)
9
IM3 IM5 IM7
8 7 6 5 22 24 26 28 30 32 34
IMD (dBc)
-30 -40 -50 -60 -70 0
IDQ = 75 mA f = 1500 MHz
Supply Voltage (Volts)
1
2
3
4
5
6
7
8
Output Power (Watts-PEP)
Pow e r Gain vs. Output Power
15 14
Ca pa cita nce vs. Supply Voltage
20 18 16 14 12 10 8 6 4 2 0 0 5
Power Gain (dB)
13 12 11 10 9 0.0 0.1 1.0 10.0
Cds and Cgs (pF)
ID Q = 75 mA ID Q = 38 mA ID Q = 19 mA
VDD = 28 V f = 1.5 Hz
VGS = 0 V f = 1 MHz
4
Cgs Cds Crss
2 1 0 10 20 30 40
Output Power (Watts)
Supply Voltage (Volts)
Bia s Voltage vs. Temperature
1 .0 3 1 .0 2 Bias Voltage (V) 1 .0 1 1 0 .9 9 0 .9 8 0 .9 7 0 .9 6 -2 0 30 Te m p. (°C) 80 13 0
0.05 0.145 0.24 0.335 0.43 0.525
Voltage normalized to 1.0 V Series show current (A)
3
Crss
3
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