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Details, datasheet, quote on part number:PTF10112
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| Part: | PTF10112 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => DMOS (Double-diffused MOS) => RF Specific |
| Description: | 60 Watts, 1.8-2.0 GHZ Goldmos Field Effect Transistor |
| Company: | Ericsson Microelectronics |
| Datasheet: | Download PTF10112 datasheet File size : 333 kB |
| Request For quote: | Find where to buy PTF10112
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Datasheet text preview:
PTF 10112 60 Watts, 1.82.0 GHz GOLDMOSTM Field Effect Transistor
Description
The PTF 10112 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. · ·
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INTERNALLY MATCHED Guaranteed Performance at 1.93, 1.99 GHz, 28 V - Output Power = 60 Watts Min - Power Gain = 12 dB Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability
Typical Output Power vs. Input Power
80
Output Power (Watts)
60
A-12
40
1011 3456 2 98
37
VCC = 28 V
20
IDQ = 580 mA f = 2000 MHz
0 1 2 3 4 5 6
0
Input Power (Watts)
Package 20248
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 28 V, POUT = 15 W, IDQ = 580 mA, f = 1.93, 1.99 GHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 580 mA, f = 1.99 GHz) Drain Efficiency (VDD = 28 V, POUT = 60 W, IDQ = 580 mA, f = 1.99 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 60 W, IDQ = 580 mA, f = 1.99 GHz --all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol
Gp s P-1dB hD Y
Min
11 60 -- --
Typ
12 -- 41 --
Max
-- -- -- 10:1
Units
dB Watts % --
e
1
PTF 10112
Electrical Characteristics (100% Tested)
Characteristic
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance
e
Conditions
VGS = 0 V, ID = 100 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 150 mA VDS = 10 V, ID = 2 A
Symbol
V(BR)DSS ID S S VGS(th) gf s
Min
65 -- 3.0 --
Typ
-- -- -- 4.0
Max
-- 5.0 5.0 --
Units
Volts mA Volts Siemens
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) TSTG RqJC
Symbol
VD S S VGS TJ PD
Value
65 ± 20 200 237 1.35 40 to +150 0.74
Unit
Vdc Vdc °C Watts W/°C °C °C/W
Typical Performance
Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency
Out put Power (W) 13 70 Gain (dB) 60 50
Output Power & Efficiency
14
80
13 Gain (dB) 12
60 50 40
Gain (dB)
Gain (dB)
12 11 10
11
IDQ = 580mA POUT = 20 W
-10 2 -20 1 Return Loss (dB)
VCC = 28 V IDQ = 580 mA
Effic ienc y (%) 1950
10
40 30 2050
9 1750
1850
9 1930
1940
1950
1960
1970
1980
-30 0 1990
Fre que ncy (MHz)
Fre que ncy (MHz)
2
Return Loss (dB)
VDD = 28 V
Effic ienc y (%) @P-1dB
30
Efficiency (%)
Broadband Test Fixture Performance
e
Output Power vs. Supply Voltage
80 -15
PTF 10112
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit) VDD = 28 V
Output Power (Watts)
70
-25
IDQ = 580 mA f1 = 1959 MHz f2 = 1960 MHz
IM3
IMD (dBc)
-35 -45 -55 -65
60
IM5
50
IDQ = 580 mA f = 2000 MHz
22 24 26 28 30 32 34
IM7
40
0
10
20
30
40
50
60
70
Supply Voltage (Volts)
Output Power (Watts-PEP)
Power Gain vs. Output Power
14 13 240 ID Q = 580 mA
Capacitance vs. Supply Voltage *
24 200 160 120 80 40 0
Power Gain (dB)
12 11 10 9 8 7 0.1
Cds and Cgs (pF)
VGS = 0 V f = 1 MHz
18
12
ID Q = 290 mA
Cds
6
ID Q = 145 mA 1. 0
VDD = 28 V f = 2000 MHz
10. 0 100.0
Crss
0 0 10 20 30 40
Output Power (Watts)
Supply Voltage (Volts) * This part is internally matched. Measurements of the finished product will not yield these results.
Bias Voltage vs. Temperature
1.03 1.02 Bias Voltage (V) 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 30 T e mp. (°C) 80 130
0. 400 1. 383 2. 367 3. 350 4. 333 5. 317
Voltage normalized to 1.0 V Series show current (A)
3
Crss
Cgs
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