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Part: PTF10119
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
Description: 12 Watts, 2.1-2.2 GHZ Goldmos Field Effect Transistor
Company: Ericsson Microelectronics
Datasheet: Download PTF10119 datasheet File size : 66 kB
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Datasheet text preview:
PTF 10119 12 Watts, 2.12.2 GHz GOLDMOSTM Field Effect Transistor
Description
The PTF 10119 is an internally matched, common source, N-channel e n h a n c e m e n t - m o d e lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 12 watts power output. Nitride surface passivation and gold metallization ensure excellent device reliability. · ·
· · · · ·
INTERNALLY MATCHED Performance at 2.17 GHz, 28 Volts - Output Power = 12 Watts Min - Power Gain = 11 dB Typ - Efficiency = 43% Typ @ P-1dB Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% lot traceability
Typical Output Power vs. Input Power
20
Output Power (Watts)
16 12 8 4 0 0 0. 2 0. 4 0. 6 0. 8 1 1.2
A-12
1011 9
3456 0053
VDD = 28 V IDQ = 160 mA f = 2170 MHz
Input Power (Watts)
Package 20222
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Tf lange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tf lange = 70°C)
Symbol
VDSS V GS TJ PD TSTG RqJC
Value
65 ± 20 200 55 0.31 40 to +150 3.2
Unit
Vdc Vdc °C Watts W/°C °C °C/W
e
1
PTF 10119
Electrical Characteristics
Characteristic
(100% Tested)
e
Conditions Symbol
V(BR)DSS IDSS VGS(th) gfs
Min
65 -- 3.0 --
Typ
-- -- -- 0.8
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
Drain-Source Breakdown Voltage VGS = 0 V, ID = 50 mA Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance VDS = 26 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 2 A
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 28 V, POUT = 3 W, IDQ = 160 mA, f = 2.11, 2.17 GHz) Power Output at 1 dB Compressed (VDD = 28 V, IDQ = 160 mA, f = 2.17 GHz) Drain Efficiency (VDD = 28 V, POUT = 12 W, IDQ = 160 mA, f = 2.17 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 12 W, IDQ = 160 mA, f = 2.17 GHz --all phase angles at frequency of test)
Symbol
Gps p-1dB hD Y
Min
10 12 30 --
Typ
11 14 43 --
Max
-- -- -- 10:1
Units
dB Watts % --
Impedance Data
VDS = 28 V, POUT = 12 W, IDQ = 160 mA
D
Z0 = 50 W
Z Source Z Load
0. 2
0 0. 45
G
2.30 GHz
S
Z Load
2.30 GHz
0. 0
Frequency
GHz 2.00 2.10 2.12 2.15 2.17 2.20 2.30 R
0.1
0.2
0.3
0.4
jX -12.11 -19.50 -18.82 -14.14 -13.15 -9.28 12.03
R 3.30 3.55 4.12 3.75 3.53 3.32 3.23
jX 1.21 0.92
< -- W AV
5.7 16.4 19.7 22.8 23.0 26.6 20.2
0.1
0.88 0.62 0.34 0.38
Z Source
2.00 GHz
0. 2
EL
0.3
0.84
05
2
0.5
Z Source W
Z Load W
2.00 GHz
0.3
0. 1
e
Bias Voltage vs. Temperature
1. 03 1. 02 1. 01
PTF 10119
Capacit ance vs. Supply Voltage *
50 45 3
Voltage nomalized to 1.0 V Series show current (A)
Cds and Cgs (pF)
Bias Voltage (V)
40 35 30 25 20 15 10 5 0 0
0. 99 0. 98 0. 97 0. 96 0. 95 0. 94 -20 0 20 40 60 80 100 0. 075 0. 5 0. 925 0. 2875 0. 7125 1. 1375
1. 5
C ds Cr s s
10 20 30 40
1 0. 5 0
T e mp. (°C)
Supply Voltage (Volts)
*This part is internally matched. Measurements of the finished product will not yield these figures.
Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower
Specifications subject to change without notice. L1 © 1998 Ericsson Inc. EUS/KR 1301-PTF 10119 Uen Rev. A 12-21-99
3
Crss (pF)
1. 00
C gs
VG S = 0 V f = 1 MHz
2. 5 2
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